Ying Jin

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
CMOS dual metal gate semiconductor device
- Patent number 8,836,038
- Issue date Sep 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 8,384,159
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with dual-metal gate structures and fabricati...
- Patent number 7,947,591
- Issue date May 24, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base oxide engineering for high-K gate stacks
- Patent number 7,939,396
- Issue date May 10, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-metal-oxide high-K gate dielectrics
- Patent number 7,824,990
- Issue date Nov 2, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid process for forming metal gates
- Patent number 7,812,414
- Issue date Oct 12, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with continuous contact etch stop layer
- Patent number 7,732,878
- Issue date Jun 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 7,531,399
- Issue date May 12, 2009
- Taiwan Semiconductor Manufacturing Company
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuit devices having n-MOSFET and p-...
- Patent number 7,465,634
- Issue date Dec 16, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with dual-metal gate structures and fabricati...
- Patent number 7,378,713
- Issue date May 27, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of multiple gate oxide with high thickness ratio in flash...
- Patent number 6,147,008
- Issue date Nov 14, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Siow Lee Chwa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Hybrid Process for Forming Metal Gates
- Publication number 20110001194
- Publication date Jan 6, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20090315125
- Publication date Dec 24, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...
- Publication number 20080188044
- Publication date Aug 7, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid process for forming metal gates
- Publication number 20080173947
- Publication date Jul 24, 2008
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...
- Publication number 20080099851
- Publication date May 1, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming integrated circuit devices having n-MOSFET and p-...
- Publication number 20080096336
- Publication date Apr 24, 2008
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS devices with continuous contact etch stop layer
- Publication number 20080093675
- Publication date Apr 24, 2008
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon levels for silicided structures including MOSFET gate e...
- Publication number 20080093682
- Publication date Apr 24, 2008
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20080070395
- Publication date Mar 20, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING METAL-CONTAINING GATE STRUCTURES
- Publication number 20080050879
- Publication date Feb 28, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having nitrided high-k gate dielectric and met...
- Publication number 20080001237
- Publication date Jan 3, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Base oxide engineering for high-K gate stacks
- Publication number 20070287199
- Publication date Dec 13, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device having PMOS and NMOS transistors with different gate st...
- Publication number 20070228480
- Publication date Oct 4, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-metal-oxide high-k gate dielectrics
- Publication number 20070128736
- Publication date Jun 7, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitridated gate dielectric layer
- Publication number 20060275975
- Publication date Dec 7, 2006
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

CMOS dual metal gate semiconductor device

Semiconductor devices and methods with bilayer dielectrics

Semiconductor devices with dual-metal gate structures and fabricati...

Base oxide engineering for high-K gate stacks

Multi-metal-oxide high-K gate dielectrics

Hybrid process for forming metal gates

MOS devices with continuous contact etch stop layer

Semiconductor devices and methods with bilayer dielectrics

Method of forming integrated circuit devices having n-MOSFET and p-...

Semiconductor devices with dual-metal gate structures and fabricati...

Creation of multiple gate oxide with high thickness ratio in flash...

Patents Applicationslast 30 patents

Hybrid Process for Forming Metal Gates

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS

SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...

Hybrid process for forming metal gates

SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...

Method of forming integrated circuit devices having n-MOSFET and p-...

MOS devices with continuous contact etch stop layer

Polysilicon levels for silicided structures including MOSFET gate e...

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS

METHODS OF FORMING METAL-CONTAINING GATE STRUCTURES

Semiconductor device having nitrided high-k gate dielectric and met...

Base oxide engineering for high-K gate stacks

CMOS device having PMOS and NMOS transistors with different gate st...

Multi-metal-oxide high-k gate dielectrics

Nitridated gate dielectric layer