Ying-Keung LEUNG

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with S/D bottom isolation and methods of formi...
- Patent number 12,148,669
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Wrap around silicide for FinFETs
- Patent number 12,068,383
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with gate over terminals
- Patent number 12,051,729
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain regions with expanded widths
- Patent number 12,034,077
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET channel on oxide structures and related methods
- Patent number 11,972,981
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,961,892
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a multi-gate device
- Patent number 11,955,554
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Sheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,942,548
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,929,417
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having oxide region between vertical fin structures
- Patent number 11,894,275
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with S/D bottom isolation and methods of formi...
- Patent number 11,854,896
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact feature and method of fabricati...
- Patent number 11,855,155
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with gate over terminals
- Patent number 11,843,038
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including gate spacer with gap or void and methods of formi...
- Patent number 11,784,241
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,777,009
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET channel on oxide structures and related methods
- Patent number 11,652,001
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including gate spacer with gap or void and methods of formi...
- Patent number 11,594,619
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around silicide for FinFETs
- Patent number 11,437,479
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,437,513
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having oxide region between vertical fin structures
- Patent number 11,410,887
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device
- Patent number 11,393,926
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Sheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET channel on oxide structures and related methods
- Patent number 11,367,659
- Issue date Jun 21, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,355,611
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked Gate-All-Around FinFET and method forming the same
- Patent number 11,335,809
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having contact feature and method of fabricati...
- Patent number 11,302,784
- Issue date Apr 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with gate over terminals
- Patent number 11,239,330
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with wrap-around silicide and method forming the same
- Patent number 11,211,498
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure
- Patent number 11,195,936
- Issue date Dec 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device
- Patent number 11,145,762
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Sheng Wei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395864
- Publication date Nov 28, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing FUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...
- Publication number 20240379442
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
- Publication number 20240339508
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME
- Publication number 20240322044
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD AND STRUCTURE FOR FINFET DEVICE
- Publication number 20240178070
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...
- Publication number 20240105517
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...
- Publication number 20240096971
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FOR HIGHLY SCALED TRANSISTORS
- Publication number 20230395687
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
- Publication number 20230378287
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for FinFET Device
- Publication number 20220359307
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MULTI-GATE DEVICE
- Publication number 20220359754
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Sheng WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wrap Around Silicide for FinFETs
- Publication number 20220352329
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co, LTD.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FOR HIGHLY SCALED TRANSISTORS
- Publication number 20220328644
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CHANNEL ON OXIDE STRUCTURES AND RELATED METHODS
- Publication number 20220319929
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with S/D Bottom Isolation and Methods of Formi...
- Publication number 20220310452
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Including Gate Spacer with Gap or Void and Methods of Formi...
- Publication number 20220310826
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FOR HIGHLY SCALED TRANSISTORS
- Publication number 20220302277
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Gate-All-Around FinFET and Method Forming the Same
- Publication number 20220271165
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...
- Publication number 20220238661
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FOR HIGHLY SCALED TRANSISTORS
- Publication number 20220208983
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
- Publication number 20220157953
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CHANNEL ON OXIDE STRUCTURES AND RELATED METHODS
- Publication number 20210296177
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20210273100
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210265464
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing FUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
- Publication number 20210249516
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...
- Publication number 20210226018
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Including Gate Spacer with Gap or Void and Methods of Formi...
- Publication number 20210098609
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device and Method of Fabrication Thereof
- Publication number 20210050427
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit with a Gate Structure and Method Making the Same
- Publication number 20210043626
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wrap Around Silicide for FinFETs
- Publication number 20200287041
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS

Ying-Keung LEUNG

Person

Patents Grantslast 30 patents

Semiconductor device with S/D bottom isolation and methods of formi...

Gate all-around semiconductor device

Wrap around silicide for FinFETs

Bipolar junction transistor with gate over terminals

Method of forming source/drain regions with expanded widths

FinFET channel on oxide structures and related methods

Contacts for highly scaled transistors

Method of fabricating a multi-gate device

Multi-gate device and method of fabrication thereof

Contacts for highly scaled transistors

FinFET device having oxide region between vertical fin structures

Semiconductor device with S/D bottom isolation and methods of formi...

Semiconductor device having contact feature and method of fabricati...

Bipolar junction transistor with gate over terminals

Devices including gate spacer with gap or void and methods of formi...

Contacts for highly scaled transistors

FinFET channel on oxide structures and related methods

Devices including gate spacer with gap or void and methods of formi...

Wrap around silicide for FinFETs

Multi-gate device and method of fabrication thereof

FinFET device having oxide region between vertical fin structures

Multi-gate device

FinFET channel on oxide structures and related methods

Multi-gate device and method of fabrication thereof

Stacked Gate-All-Around FinFET and method forming the same

Semiconductor device having contact feature and method of fabricati...

Bipolar junction transistor with gate over terminals

FinFETs with wrap-around silicide and method forming the same

Semiconductor structure

Multi-gate device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...

BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS

STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME

METHOD AND STRUCTURE FOR FINFET DEVICE

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...

SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...

CONTACTS FOR HIGHLY SCALED TRANSISTORS

BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS

Method and Structure for FinFET Device

METHOD OF FABRICATING A MULTI-GATE DEVICE

Wrap Around Silicide for FinFETs

CONTACTS FOR HIGHLY SCALED TRANSISTORS

FINFET CHANNEL ON OXIDE STRUCTURES AND RELATED METHODS

Semiconductor Device with S/D Bottom Isolation and Methods of Formi...

Devices Including Gate Spacer with Gap or Void and Methods of Formi...

CONTACTS FOR HIGHLY SCALED TRANSISTORS

Stacked Gate-All-Around FinFET and Method Forming the Same

SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...

CONTACTS FOR HIGHLY SCALED TRANSISTORS

BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS

FINFET CHANNEL ON OXIDE STRUCTURES AND RELATED METHODS

MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS

SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATI...

Devices Including Gate Spacer with Gap or Void and Methods of Formi...

Multi-Gate Device and Method of Fabrication Thereof

Integrated Circuit with a Gate Structure and Method Making the Same

Wrap Around Silicide for FinFETs