Yo-Sep MIN

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
MoS2 thin film and method for manufacturing same
- Patent number 9,863,039
- Issue date Jan 9, 2018
- Konkuk University Industrial Cooperation Corp.
- Yo-Sep Min
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of fabricating metal oxide film on carbon nanotube and metho...
- Patent number 8,507,030
- Issue date Aug 13, 2013
- Samsung Electronics Co., Ltd.
- Yo-seb Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field emission electrode, method of manufacturing the same, and fie...
- Patent number 8,294,348
- Issue date Oct 23, 2012
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing field emission electrode having carbon nano...
- Patent number 8,272,914
- Issue date Sep 25, 2012
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing oxide film having high dielectric constant...
- Patent number 8,143,660
- Issue date Mar 27, 2012
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of transferring carbon nanotubes
- Patent number 8,007,617
- Issue date Aug 30, 2011
- Samsung Electronics Co., Ltd.
- Yo-seb Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming bismuth titanium silicon oxide thin film
- Patent number 7,892,917
- Issue date Feb 22, 2011
- Samsung Electronics Co., Ltd.
- Young-jin Cho
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method of growing single-walled carbon nanotubes
- Patent number 7,799,307
- Issue date Sep 21, 2010
- Samsung Electronics Co., Ltd.
- Eun-Ju Bae
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Charge trap layer for a charge trap semiconductor memory device and...
- Patent number 7,795,159
- Issue date Sep 14, 2010
- Samsung Electronics Co., Ltd.
- Kwang-soo Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing zinc oxide nanowires and device having the...
- Patent number 7,767,140
- Issue date Aug 3, 2010
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing electronic device using thin film transist...
- Patent number 7,767,502
- Issue date Aug 3, 2010
- Samsung Electronics Co., Ltd.
- Do-young Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitrogen-doped single-walled carbon nanotubes
- Patent number 7,713,509
- Issue date May 11, 2010
- Samsung Electronics Co., Ltd.
- Eun-Ju Bae
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thin film including multi components and method of forming the same
- Patent number 7,709,377
- Issue date May 4, 2010
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
N-type carbon nanotube field effect transistor and method of fabric...
- Patent number 7,705,347
- Issue date Apr 27, 2010
- Samsung Electronics Co., Ltd.
- Eun-ju Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing carbonaceous impurities in carbon nanotubes
- Patent number 7,604,790
- Issue date Oct 20, 2009
- Samsung Electronics Co., Ltd.
- Eun-Ju Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous dielectric thin film and manufacturing method thereof
- Patent number 7,501,191
- Issue date Mar 10, 2009
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Memory device having nanocrystals in memory cell
- Patent number 7,501,680
- Issue date Mar 10, 2009
- Samsung Electronics Co., Ltd.
- Kwang-soo Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a memory device having improved erasing cha...
- Patent number 7,402,492
- Issue date Jul 22, 2008
- Samsung Electronics Co., Ltd.
- Sang-hun Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precursor for hafnium oxide layer and method for forming hafnium ox...
- Patent number 7,399,716
- Issue date Jul 15, 2008
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
N-type carbon nanotube field effect transistor and method of fabric...
- Patent number 7,381,983
- Issue date Jun 3, 2008
- Samsung Electronics Co., Ltd.
- Eun-ju Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous high-k thin film and manufacturing method thereof
- Patent number 7,379,322
- Issue date May 27, 2008
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin...
- Patent number 7,374,994
- Issue date May 20, 2008
- Samsung Electronics Co., Ltd.
- Young-jin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor with protective cap over flexible substrate, e...
- Patent number 7,176,488
- Issue date Feb 13, 2007
- Samsung Electronics Co., Ltd.
- Do-young Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition method using alcohol for forming metal ox...
- Patent number 7,135,207
- Issue date Nov 14, 2006
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vertical carbon nanotube-field effect transistor and method of manu...
- Patent number 7,132,714
- Issue date Nov 7, 2006
- Samsung Electronics Co., Ltd.
- Eun-ju Bae
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitor for semiconductor device, manufacturing method thereof, a...
- Patent number 7,105,401
- Issue date Sep 12, 2006
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precursor for hafnium oxide layer and method for forming halnium ox...
- Patent number 7,030,450
- Issue date Apr 18, 2006
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Rewritable data storage using carbonaceous material and writing/rea...
- Patent number 7,020,064
- Issue date Mar 28, 2006
- Samsung Electronics Co., Ltd.
- Byong-man Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing inorganic nanotube
- Patent number 7,005,391
- Issue date Feb 28, 2006
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin...
- Patent number 6,919,597
- Issue date Jul 19, 2005
- Samsung Electronics Co., Ltd.
- Young-jin Cho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOS2 THIN FILM AND METHOD FOR MANUFACTURING SAME
- Publication number 20160168694
- Publication date Jun 16, 2016
- Konkuk University Industrial Cooperation Corp.
- Yo-Sep MIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GAS BARRIER FILM, REFRIGERATOR HAVING THE SAME AND METHOD OF MANUFA...
- Publication number 20150267959
- Publication date Sep 24, 2015
- Samsung Electronics Co., Ltd.
- Seon-Yeong Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Field emission electrode, method of manufacturing the same, and fie...
- Publication number 20120003895
- Publication date Jan 5, 2012
- Yo-sep Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate structure, semiconductor memory device having the gate structu...
- Publication number 20100109074
- Publication date May 6, 2010
- Kwang-Soo Seol
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF REMOVING CARBONACEOUS IMPURITIES IN CARBON NANOTUBES
- Publication number 20090226360
- Publication date Sep 10, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Eun-Ju Bae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of fabricating metal oxide film on carbon nanotube and metho...
- Publication number 20090186149
- Publication date Jul 23, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Yo-Seb Min
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of transferring carbon nanotubes
- Publication number 20090183816
- Publication date Jul 23, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Yo-seb Min
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for forming bismuth titanium silicon oxide thin film
- Publication number 20080293256
- Publication date Nov 27, 2008
- Samsung Electronics Co., Ltd.
- Young-jin Cho
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
N-TYPE CARBON NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRIC...
- Publication number 20080191280
- Publication date Aug 14, 2008
- Samsung Electronics Co.,Ltd.
- Eun-ju Bae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Field emission electrode, method of manufacturing the same, and fie...
- Publication number 20080164801
- Publication date Jul 10, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Yo-sep Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge trap layer for a charge trap semiconductor memory device and...
- Publication number 20080131710
- Publication date Jun 5, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Kwang-soo Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory device having nanocrystals and methods of manufacturing the...
- Publication number 20070257297
- Publication date Nov 8, 2007
- Kwang-soo Seol
- B82 - NANO-TECHNOLOGY
Information Patent Application
Field emission electrode, field emission device having the same and...
- Publication number 20070236133
- Publication date Oct 11, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Eun-Ju Bae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for manufacturing electronic device using thin film transist...
- Publication number 20070172999
- Publication date Jul 26, 2007
- Samsung Electronics Co., Ltd.
- Do-young Kim
- G02 - OPTICS
Information Patent Application
Method of forming nitrogen-doped single-walled carbon nanotubes
- Publication number 20070157348
- Publication date Jul 5, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Eun-Ju Bae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for manufacturing zinc oxide nanowires and device having the...
- Publication number 20070154385
- Publication date Jul 5, 2007
- Yo-sep Min
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for manufacturing single-walled carbon nanotube on glass
- Publication number 20070154623
- Publication date Jul 5, 2007
- Yo-sep Min
- B82 - NANO-TECHNOLOGY
Information Patent Application
Gate structure, semiconductor memory device having the gate structu...
- Publication number 20070108505
- Publication date May 17, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Kwang-Soo Seol
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of growing single-walled carbon nanotubes
- Publication number 20070014714
- Publication date Jan 18, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Eun-Ju Bae
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
N-type carbon nanotube field effect transistor and method of fabric...
- Publication number 20070012961
- Publication date Jan 18, 2007
- Samsung Electronics Co., Ltd.
- Eun-ju Bae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of manufacturing a capacitor for semiconductor device
- Publication number 20060289921
- Publication date Dec 28, 2006
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile memory device having a plurality of trapping films
- Publication number 20060255399
- Publication date Nov 16, 2006
- Ju-Hyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Catalytic resist including metal precursor compound and method of p...
- Publication number 20060216636
- Publication date Sep 28, 2006
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Method of manufacturing a memory device having improved erasing cha...
- Publication number 20060211205
- Publication date Sep 21, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Sang-hun Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amorphous high-k thin film and manufacturing method thereof
- Publication number 20060180838
- Publication date Aug 17, 2006
- Samsung Electronics Co., Ltd.
- Yo-sep Min
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Precursor for hafnium oxide layer and method for forming hafnium ox...
- Publication number 20060118891
- Publication date Jun 8, 2006
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- C07 - ORGANIC CHEMISTRY
Information Patent Application
Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin...
- Publication number 20050272200
- Publication date Dec 8, 2005
- Samsung Electronics Co., Ltd.
- Young-jin Cho
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
Thin film including multi components and method of forming the same
- Publication number 20050260348
- Publication date Nov 24, 2005
- Samsung Electronics Co., Ltd.
- Jung-hyun Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING INORGANIC NANOTUBE
- Publication number 20050202684
- Publication date Sep 15, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Yo-sep Min
- C30 - CRYSTAL GROWTH
Information Patent Application
Amorphous dielectric thin film and manufacturing method thereof
- Publication number 20050191514
- Publication date Sep 1, 2005
- Yo-sep Min
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

MoS2 thin film and method for manufacturing same

Method of fabricating metal oxide film on carbon nanotube and metho...

Field emission electrode, method of manufacturing the same, and fie...

Method of manufacturing field emission electrode having carbon nano...

Method for manufacturing oxide film having high dielectric constant...

Method of transferring carbon nanotubes

Method for forming bismuth titanium silicon oxide thin film

Method of growing single-walled carbon nanotubes

Charge trap layer for a charge trap semiconductor memory device and...

Method for manufacturing zinc oxide nanowires and device having the...

Method for manufacturing electronic device using thin film transist...

Method of forming nitrogen-doped single-walled carbon nanotubes

Thin film including multi components and method of forming the same

N-type carbon nanotube field effect transistor and method of fabric...

Method of removing carbonaceous impurities in carbon nanotubes

Amorphous dielectric thin film and manufacturing method thereof

Memory device having nanocrystals in memory cell

Method of manufacturing a memory device having improved erasing cha...

Precursor for hafnium oxide layer and method for forming hafnium ox...

N-type carbon nanotube field effect transistor and method of fabric...

Amorphous high-k thin film and manufacturing method thereof

Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin...

Thin film transistor with protective cap over flexible substrate, e...

Chemical vapor deposition method using alcohol for forming metal ox...

Vertical carbon nanotube-field effect transistor and method of manu...

Capacitor for semiconductor device, manufacturing method thereof, a...

Precursor for hafnium oxide layer and method for forming halnium ox...

Rewritable data storage using carbonaceous material and writing/rea...

Method of manufacturing inorganic nanotube

Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin...

Patents Applicationslast 30 patents

MOS2 THIN FILM AND METHOD FOR MANUFACTURING SAME

GAS BARRIER FILM, REFRIGERATOR HAVING THE SAME AND METHOD OF MANUFA...

Field emission electrode, method of manufacturing the same, and fie...

Gate structure, semiconductor memory device having the gate structu...

METHOD OF REMOVING CARBONACEOUS IMPURITIES IN CARBON NANOTUBES

Method of fabricating metal oxide film on carbon nanotube and metho...

Method of transferring carbon nanotubes

Method for forming bismuth titanium silicon oxide thin film

N-TYPE CARBON NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRIC...

Field emission electrode, method of manufacturing the same, and fie...

Charge trap layer for a charge trap semiconductor memory device and...

Memory device having nanocrystals and methods of manufacturing the...

Field emission electrode, field emission device having the same and...

Method for manufacturing electronic device using thin film transist...

Method of forming nitrogen-doped single-walled carbon nanotubes

Method for manufacturing zinc oxide nanowires and device having the...

Method for manufacturing single-walled carbon nanotube on glass

Gate structure, semiconductor memory device having the gate structu...

Method of growing single-walled carbon nanotubes

N-type carbon nanotube field effect transistor and method of fabric...

Method of manufacturing a capacitor for semiconductor device

Nonvolatile memory device having a plurality of trapping films

Catalytic resist including metal precursor compound and method of p...

Method of manufacturing a memory device having improved erasing cha...

Amorphous high-k thin film and manufacturing method thereof

Precursor for hafnium oxide layer and method for forming hafnium ox...

Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin...

Thin film including multi components and method of forming the same

METHOD OF MANUFACTURING INORGANIC NANOTUBE

Amorphous dielectric thin film and manufacturing method thereof