Yong-Tian Hou

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit metal gate structure
- Patent number 10,164,045
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and manufacturing method the...
- Patent number 9,397,184
- Issue date Jul 19, 2016
- United Microelectronics Corp.
- Yong Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS dual metal gate semiconductor device
- Patent number 8,836,038
- Issue date Sep 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metal gate structure and method of fabrication
- Patent number 8,679,962
- Issue date Mar 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid process for forming metal gates of MOS devices
- Patent number 8,536,660
- Issue date Sep 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 8,384,159
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve dielectric quality in high-k metal gate technology
- Patent number 8,324,090
- Issue date Dec 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate device
- Patent number 8,258,546
- Issue date Sep 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation method for reducing threshold voltage for high-K metal...
- Patent number 7,994,051
- Issue date Aug 9, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal gates in a gate last process
- Patent number 7,871,915
- Issue date Jan 18, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 7,531,399
- Issue date May 12, 2009
- Taiwan Semiconductor Manufacturing Company
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuit devices having n-MOSFET and p-...
- Patent number 7,465,634
- Issue date Dec 16, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making resonant tunneling diodes and CMOS backend-process...
- Patent number 7,002,175
- Issue date Feb 21, 2006
- Agency for Science, Technology and Research
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20240379811
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATING T...
- Publication number 20210265479
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20170207315
- Publication date Jul 20, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...
- Publication number 20150372105
- Publication date Dec 24, 2015
- UNITED MICROELECTRONICS CORP.
- Yong Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...
- Publication number 20150372114
- Publication date Dec 24, 2015
- UNITED MICROELECTRONICS CORP.
- Yong Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...
- Publication number 20150021681
- Publication date Jan 22, 2015
- UNITED MICROELECTRONICS CORP.
- Yong Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20140091402
- Publication date Apr 3, 2014
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Metal Gate Device
- Publication number 20110272766
- Publication date Nov 10, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Process for Forming Metal Gates
- Publication number 20110001194
- Publication date Jan 6, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTATION METHOD FOR REDUCING THRESHOLD VOLTAGE FOR HIGH-K METAL...
- Publication number 20100096705
- Publication date Apr 22, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING METAL GATES IN A GATE LAST PROCESS
- Publication number 20100081262
- Publication date Apr 1, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY
- Publication number 20100052063
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL HIGH-K METAL GATE STRUCTURE AND METHOD OF MAKING
- Publication number 20100044804
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION
- Publication number 20100044806
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20090315125
- Publication date Dec 24, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Process for Forming Metal Gates of MOS Devices
- Publication number 20090230479
- Publication date Sep 17, 2009
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO ADJUST WORK FUNCTION BY PLASMA ASSISTED METAL INCOR...
- Publication number 20080146012
- Publication date Jun 19, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wenli Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming integrated circuit devices having n-MOSFET and p-...
- Publication number 20080096336
- Publication date Apr 24, 2008
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20080070395
- Publication date Mar 20, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having nitrided high-k gate dielectric and met...
- Publication number 20080001237
- Publication date Jan 3, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS compatible low band offset double barrier resonant tunneling d...
- Publication number 20050056827
- Publication date Mar 17, 2005
- Agency For Science, Technology and Research
- Ming Fu Li
- G11 - INFORMATION STORAGE

Yong-Tian Hou

Person

Patents Grantslast 30 patents

Integrated circuit metal gate structure

Semiconductor device having metal gate and manufacturing method the...

CMOS dual metal gate semiconductor device

Integrated circuit metal gate structure and method of fabrication

Hybrid process for forming metal gates of MOS devices

Semiconductor devices and methods with bilayer dielectrics

Method to improve dielectric quality in high-k metal gate technology

High-k metal gate device

Implantation method for reducing threshold voltage for high-K metal...

Method for forming metal gates in a gate last process

Semiconductor devices and methods with bilayer dielectrics

Method of forming integrated circuit devices having n-MOSFET and p-...

Method of making resonant tunneling diodes and CMOS backend-process...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT METAL GATE STRUCTURE

INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATING T...

INTEGRATED CIRCUIT METAL GATE STRUCTURE

SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...

SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...

SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...

INTEGRATED CIRCUIT METAL GATE STRUCTURE

High-K Metal Gate Device

Hybrid Process for Forming Metal Gates

IMPLANTATION METHOD FOR REDUCING THRESHOLD VOLTAGE FOR HIGH-K METAL...

METHOD FOR FORMING METAL GATES IN A GATE LAST PROCESS

METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY

NOVEL HIGH-K METAL GATE STRUCTURE AND METHOD OF MAKING

INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS

Hybrid Process for Forming Metal Gates of MOS Devices

NOVEL METHOD TO ADJUST WORK FUNCTION BY PLASMA ASSISTED METAL INCOR...

Method of forming integrated circuit devices having n-MOSFET and p-...

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS

Semiconductor device having nitrided high-k gate dielectric and met...

CMOS compatible low band offset double barrier resonant tunneling d...