Yongzhong Hu

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated isolation capacitance structure
- Patent number 10,629,474
- Issue date Apr 21, 2020
- Semiconductor Components Industries, LLC
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top drain LDMOS
- Patent number 10,008,598
- Issue date Jun 26, 2018
- Alpha and Omega Semiconductor Incorporated
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication and device configuration of asymmetrical DMOS...
- Patent number 9,337,329
- Issue date May 10, 2016
- Alpha and Omega Semiconductor Incorporated
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top drain LDMOS
- Patent number 9,159,828
- Issue date Oct 13, 2015
- Alpha and Omega Semiconductor Incorporated
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of high sheet resistance resistors and high capacitance c...
- Patent number 8,835,251
- Issue date Sep 16, 2014
- Alpha and Omega Semiconductor Incorporated
- YongZhong Hu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Split gate with different gate materials and work functions to redu...
- Patent number 8,524,558
- Issue date Sep 3, 2013
- Alpha and Omega Semiconductor Incorporated
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and method to form MOSFET devices with low resistance...
- Patent number 8,236,653
- Issue date Aug 7, 2012
- Alpha & Omega Semiconductor, Ltd.
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and method to form MOSFET devices with low resistance...
- Patent number 8,105,905
- Issue date Jan 31, 2012
- Alpha & Omega Semiconductor, Ltd.
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate with different gate materials and work functions to redu...
- Patent number 8,058,687
- Issue date Nov 15, 2011
- Alpha & Omega Semiconductor, Ltd.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device configuration of asymmetrical DMOSFET with schottky barrier...
- Patent number 8,022,482
- Issue date Sep 20, 2011
- Alpha & Omega Semiconductor, Ltd.
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of high sheet resistance resistors and high capacitance c...
- Patent number 7,855,422
- Issue date Dec 21, 2010
- Alpha & Omega Semiconductor, Ltd.
- YongZhong Hu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Configuration and method to form MOSFET devices with low resistance...
- Patent number 7,829,941
- Issue date Nov 9, 2010
- Alpha & Omega Semiconductor, Ltd.
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Completely decoupled high voltage and low voltage transistor manufa...
- Patent number 7,824,977
- Issue date Nov 2, 2010
- Alpha & Omega Semiconductor, Ltd.
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable (OTP) memory cell
- Patent number 7,805,687
- Issue date Sep 28, 2010
- Alpha & Omega Semiconductor, Ltd.
- YongZhong Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable memory cell
- Patent number 7,256,446
- Issue date Aug 14, 2007
- Alpha & Omega Semiconductor, Ltd.
- Yongzhong Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash technology transistors and methods for forming the same
- Patent number 6,797,568
- Issue date Sep 28, 2004
- Lattice Semiconductor Corp.
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Top Drain LDMOS
- Publication number 20170141225
- Publication date May 18, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP DRAIN LDMOS
- Publication number 20120273879
- Publication date Nov 1, 2012
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURATION AND METHOD TO FORM MOSFET DEVICES WITH LOW RESISTANCE...
- Publication number 20120129306
- Publication date May 24, 2012
- Yongzhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabrication and device configuration of asymmetrical DMOS...
- Publication number 20120083084
- Publication date Apr 5, 2012
- Yongzhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split gate with different gate materials and work functions to redu...
- Publication number 20120028427
- Publication date Feb 2, 2012
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and method to form MOSFET devices with low resistance...
- Publication number 20110124167
- Publication date May 26, 2011
- Yongzhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of high sheet resistance resistors and high capacitance c...
- Publication number 20110092035
- Publication date Apr 21, 2011
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate manufactured with locos techniques
- Publication number 20100015770
- Publication date Jan 21, 2010
- Alpha and Omega Semiconductor, Inc.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate manufactured with locos techniques
- Publication number 20080296673
- Publication date Dec 4, 2008
- Alpha & Omega Semiconductor, LTD.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Completely decoupled high voltage and low voltage transistor manufa...
- Publication number 20080237777
- Publication date Oct 2, 2008
- Alpha & Omega Semiconductor, LTD.
- Yongzhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split gate with different gate materials and work functions to redu...
- Publication number 20080179668
- Publication date Jul 31, 2008
- Alpha & Omega Semiconductor, LTD.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of high sheet resistance resistors and high capacitance c...
- Publication number 20070281418
- Publication date Dec 6, 2007
- Alpha & Omega Semiconductor, LTD.
- YongZhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabrication and device configuration of asymmetrical DMOS...
- Publication number 20070187751
- Publication date Aug 16, 2007
- Alpha & Omega Semiconductor, LTD.
- Yongzhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and method to form mosfet devices with low resistance...
- Publication number 20070170498
- Publication date Jul 26, 2007
- Alpha & Omega Semiconductor, LTD.
- Yongzhong Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tri-states one-time programmable memory (OTP) cell
- Publication number 20070069297
- Publication date Mar 29, 2007
- YongZhong Hu
- G11 - INFORMATION STORAGE
Information Patent Application
One time programmable memory cell
- Publication number 20060249791
- Publication date Nov 9, 2006
- Alpha and Omega Semiconductor Ltd
- Yongzhong Hu
- G11 - INFORMATION STORAGE
Information Patent Application
Diode structure for word-line protection in a memory circuit
- Publication number 20060145238
- Publication date Jul 6, 2006
- Fabiano Fontana
- G11 - INFORMATION STORAGE
Information Patent Application
Process for fabricating a semiconductor device having an RTCVD layer
- Publication number 20060128162
- Publication date Jun 15, 2006
- Sunil D. Mehta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Yongzhong Hu

Person

Patents Grantslast 30 patents

Integrated isolation capacitance structure

Top drain LDMOS

Method of fabrication and device configuration of asymmetrical DMOS...

Top drain LDMOS

Formation of high sheet resistance resistors and high capacitance c...

Split gate with different gate materials and work functions to redu...

Configuration and method to form MOSFET devices with low resistance...

Configuration and method to form MOSFET devices with low resistance...

Split gate with different gate materials and work functions to redu...

Device configuration of asymmetrical DMOSFET with schottky barrier...

Formation of high sheet resistance resistors and high capacitance c...

Configuration and method to form MOSFET devices with low resistance...

Completely decoupled high voltage and low voltage transistor manufa...

One-time programmable (OTP) memory cell

One time programmable memory cell

Flash technology transistors and methods for forming the same

Patents Applicationslast 30 patents

Top Drain LDMOS

TOP DRAIN LDMOS

CONFIGURATION AND METHOD TO FORM MOSFET DEVICES WITH LOW RESISTANCE...

Method of fabrication and device configuration of asymmetrical DMOS...

Split gate with different gate materials and work functions to redu...

Configuration and method to form MOSFET devices with low resistance...

Formation of high sheet resistance resistors and high capacitance c...

Double gate manufactured with locos techniques

Double gate manufactured with locos techniques

Completely decoupled high voltage and low voltage transistor manufa...

Split gate with different gate materials and work functions to redu...

Formation of high sheet resistance resistors and high capacitance c...

Method of fabrication and device configuration of asymmetrical DMOS...

Configuration and method to form mosfet devices with low resistance...

Tri-states one-time programmable memory (OTP) cell

One time programmable memory cell

Diode structure for word-line protection in a memory circuit

Process for fabricating a semiconductor device having an RTCVD layer