Yoshiaki Nakayama

Person

Nukata-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Data erasure device for erasing data from non-volatile semiconducto...
- Patent number 10,867,680
- Issue date Dec 15, 2020
- Denso Corporation
- Koichi Yako
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having SOI substrate
- Patent number 8,604,513
- Issue date Dec 10, 2013
- Denso Corporation
- Youichi Ashida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device with planer gate elec...
- Patent number 7,799,667
- Issue date Sep 21, 2010
- Denso Corporation
- Satoshi Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,298,020
- Issue date Nov 20, 2007
- Denso Corporation
- Syuji Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor equipment with lateral and vertical MOS regions
- Patent number 6,958,543
- Issue date Oct 25, 2005
- Denso Corporation
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor equipment
- Patent number 6,940,144
- Issue date Sep 6, 2005
- Denso Corporation
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS transistor for absorbing surge current
- Patent number 6,831,331
- Issue date Dec 14, 2004
- Denso Corporation
- Yasuhiro Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxidized film on SOI substrate
- Patent number 6,420,281
- Issue date Jul 16, 2002
- Denso Corporation
- Takuya Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching trench in manufacturing semiconductor devices
- Patent number 6,291,315
- Issue date Sep 18, 2001
- Denso Corporation
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,242,787
- Issue date Jun 5, 2001
- Denso Corporation
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,104,076
- Issue date Aug 15, 2000
- Denso Corporation
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,672,894
- Issue date Sep 30, 1997
- Nippondenso Co., Ltd.
- Hiroshi Maeda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DATA ERASURE DEVICE FOR ERASING DATA FROM NON-VOLATILE SEMICONDUCTO...
- Publication number 20190325967
- Publication date Oct 24, 2019
- DENSO CORPORATION
- Koichi YAKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190296149
- Publication date Sep 26, 2019
- DENSO CORPORATION
- Tsuyoshi YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having SOI substrate and method for manufactur...
- Publication number 20110073904
- Publication date Mar 31, 2011
- DENSO CORPORATION
- Youichi Ashida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor device
- Publication number 20080293202
- Publication date Nov 27, 2008
- DENSO CORPORATION
- Satoshi Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having element portion and control circuit por...
- Publication number 20060086449
- Publication date Apr 27, 2006
- DENSO CORPORATION
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Easily crack checkable semiconductor device
- Publication number 20060071284
- Publication date Apr 6, 2006
- DENSO CORPORATION
- Akira Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20050001265
- Publication date Jan 6, 2005
- Satoshi Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040188770
- Publication date Sep 30, 2004
- DENSO Corporation
- Syuji Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor equipment
- Publication number 20040075113
- Publication date Apr 22, 2004
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor equipment
- Publication number 20040061163
- Publication date Apr 1, 2004
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20020017697
- Publication date Feb 14, 2002
- DENSO Corporation
- Yasuhiro Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming oxidized film on SOI substrate
- Publication number 20010005605
- Publication date Jun 28, 2001
- Takuya Okuno
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiaki Nakayama

Person

Patents Grantslast 30 patents

Data erasure device for erasing data from non-volatile semiconducto...

Semiconductor device having SOI substrate

Method for manufacturing semiconductor device with planer gate elec...

Semiconductor device and method of manufacturing the same

Semiconductor equipment with lateral and vertical MOS regions

Semiconductor equipment

Power MOS transistor for absorbing surge current

Method of forming oxidized film on SOI substrate

Method for etching trench in manufacturing semiconductor devices

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device

Patents Applicationslast 30 patents

DATA ERASURE DEVICE FOR ERASING DATA FROM NON-VOLATILE SEMICONDUCTO...

SEMICONDUCTOR DEVICE

Semiconductor device having SOI substrate and method for manufactur...

Method for manufacturing semiconductor device

Semiconductor device having element portion and control circuit por...

Easily crack checkable semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor equipment

Semiconductor equipment

Semiconductor device and manufacturing method thereof

Method of forming oxidized film on SOI substrate