Yoshiaki Sonobe

Person

Fujisawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device and magnetic memory apparatus with perpendic...
- Patent number 12,125,511
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element and magnetoresistive memory device
- Patent number 12,004,355
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and magnetic memory apparatus
- Patent number 11,942,127
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and magnetic memory apparatus
- Patent number 11,922,985
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Syuta Honda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and operation method thereof
- Patent number 11,871,678
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction elements and magnetic resistance memory de...
- Patent number 11,158,672
- Issue date Oct 26, 2021
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device and magnetic resistance memory device
- Patent number 10,879,451
- Issue date Dec 29, 2020
- Samsung Electronics Co., Ltd.
- Hiroyoshi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device and magnetic resistance memory device
- Patent number 10,840,435
- Issue date Nov 17, 2020
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus including magnetoresistive memory device
- Patent number 10,679,686
- Issue date Jun 9, 2020
- Samsung Electronics Co., Ltd.
- Masatoshi Sonoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction devices and magnetoresistive memory devices
- Patent number 10,566,042
- Issue date Feb 18, 2020
- Samsung Electronics Co., Ltd.
- Ken Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device
- Patent number 10,431,279
- Issue date Oct 1, 2019
- Samsung Electronics Co., Ltd.
- Masatoshi Sonoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic layer and magnetic device including the same
- Patent number 10,395,809
- Issue date Aug 27, 2019
- Samsung Electronics Co., Ltd.
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device utilizing lattice strain
- Patent number 10,170,695
- Issue date Jan 1, 2019
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistive devices including a free layer having different m...
- Patent number 9,715,915
- Issue date Jul 25, 2017
- Samsung Electronics Co., Ltd.
- Eiji Kita
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device
- Patent number 9,349,944
- Issue date May 24, 2016
- Samsung Electronics Co., Ltd.
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic disk and magnetic disk apparatus having an annular start-s...
- Patent number 6,104,578
- Issue date Aug 15, 2000
- International Business Machines Corporation
- Nobuyuki Kitazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Head actuator assembly and method for fabricating the same
- Patent number 5,970,602
- Issue date Oct 26, 1999
- International Business Machines Corporation
- Yoshinao Harada
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic recording medium and magnetic recording devi...
- Patent number 5,863,631
- Issue date Jan 26, 1999
- International Business Machines Corporation
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic disk apparatus having recording heads for opposite disk su...
- Patent number 5,296,980
- Issue date Mar 22, 1994
- International Business Machines Corporation
- Takao Matsui
- G11 - INFORMATION STORAGE
Information Patent Grant
Digital magnetic recording/reproduction apparatus and method
- Patent number 4,908,722
- Issue date Mar 13, 1990
- Kabushiki Kaisha Toshiba
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic recording method
- Patent number 4,646,168
- Issue date Feb 24, 1987
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY DEVICE AND OPERATION METHOD THEREOF
- Publication number 20220238796
- Publication date Jul 28, 2022
- Samsung Electronics Co., Ltd.
- Yoshiaki SONOBE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETORESISTIVE MEMORY DEVICE
- Publication number 20220130901
- Publication date Apr 28, 2022
- Samsung Electronics Co., Ltd.
- Yoshiaki SONOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS
- Publication number 20220115049
- Publication date Apr 14, 2022
- Samsung Electronics Co., Ltd.
- Yoshiaki SONOBE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS
- Publication number 20220108737
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Yoshiaki SONOBE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS
- Publication number 20220108738
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Syuta HONDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENTS AND MAGNETIC RESISTANCE MEMORY DE...
- Publication number 20200212104
- Publication date Jul 2, 2020
- Samsung Electronics Co., Ltd.
- Yoshiaki SONOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RESISTANCE MEMORY DEVICE
- Publication number 20200144482
- Publication date May 7, 2020
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RESISTANCE MEMORY DEVICE
- Publication number 20200058846
- Publication date Feb 20, 2020
- Samsung Electronics Co., Ltd.
- Hiroyoshi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS INCLUDING MAGNETORESISTIVE MEMORY DEVICE
- Publication number 20190355403
- Publication date Nov 21, 2019
- Samsung Electronics Co., Ltd.
- Masatoshi SONODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES AND MAGNETORESISTIVE MEMORY DEVICES
- Publication number 20190164587
- Publication date May 30, 2019
- Samsung Electronics Co., Ltd.
- KEN MACHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE
- Publication number 20180226115
- Publication date Aug 9, 2018
- Samsung Electronics Co., Ltd.
- Masatoshi SONODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20180069173
- Publication date Mar 8, 2018
- Yoshiaki SONOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME
- Publication number 20170330668
- Publication date Nov 16, 2017
- Shigeki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20170117458
- Publication date Apr 27, 2017
- Yoshiaki SONOBE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO-RESISTIVE DEVICES
- Publication number 20160125924
- Publication date May 5, 2016
- Eiji KITA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETORESISTIVE RANDOM ACCESS...
- Publication number 20160087194
- Publication date Mar 24, 2016
- Samsung Electronics Co., Ltd.
- Hiroyoshi ITOH
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20150188034
- Publication date Jul 2, 2015
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiaki Sonobe

Person

Patents Grantslast 30 patents

Magnetic memory device and magnetic memory apparatus with perpendic...

Magnetic tunnel junction element and magnetoresistive memory device

Magnetic memory device and magnetic memory apparatus

Magnetic memory device and magnetic memory apparatus

Magnetic memory device and operation method thereof

Magnetic tunnel junction elements and magnetic resistance memory de...

Magnetic tunnel junction device and magnetic resistance memory device

Magnetic tunnel junction device and magnetic resistance memory device

Apparatus including magnetoresistive memory device

Magnetic tunnel junction devices and magnetoresistive memory devices

Magnetoresistive memory device

Perpendicular magnetic layer and magnetic device including the same

Magnetic tunnel junction device utilizing lattice strain

Magneto-resistive devices including a free layer having different m...

Magnetic tunnel junction device

Magnetic disk and magnetic disk apparatus having an annular start-s...

Head actuator assembly and method for fabricating the same

Perpendicular magnetic recording medium and magnetic recording devi...

Magnetic disk apparatus having recording heads for opposite disk su...

Digital magnetic recording/reproduction apparatus and method

Perpendicular magnetic recording method

Patents Applicationslast 30 patents

MAGNETIC MEMORY DEVICE AND OPERATION METHOD THEREOF

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETORESISTIVE MEMORY DEVICE

MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS

MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS

MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS

MAGNETIC TUNNEL JUNCTION ELEMENTS AND MAGNETIC RESISTANCE MEMORY DE...

MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RESISTANCE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RESISTANCE MEMORY DEVICE

APPARATUS INCLUDING MAGNETORESISTIVE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICES AND MAGNETORESISTIVE MEMORY DEVICES

MAGNETORESISTIVE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICE

PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME

MAGNETIC TUNNEL JUNCTION DEVICE

MAGNETO-RESISTIVE DEVICES

MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETORESISTIVE RANDOM ACCESS...

MAGNETIC TUNNEL JUNCTION DEVICE