Yoshihiro Kishita

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with insulating resin layer and substrate havi...
- Patent number 5,656,857
- Issue date Aug 12, 1997
- Kabushiki Kaisha Toshiba
- Yoshihiro Kishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a compound semiconductor device having gate...
- Patent number 5,409,849
- Issue date Apr 25, 1995
- Kabushiki Kaisha Toshiba
- Yoshihiro Kishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor integrated circuit having improved electrode...
- Patent number 5,329,154
- Issue date Jul 12, 1994
- Kabushiki Kaisha Toshiba
- Yoshihiro Kishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a 3-ply gate electrode
- Patent number 4,951,121
- Issue date Aug 21, 1990
- Kabushiki Kaisha Toshiba
- Motoki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GAAS semiconductor device
- Patent number 4,695,869
- Issue date Sep 22, 1987
- Kabushiki Kaisha Toshiba
- Kazuhiko Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a conductor pattern using lift-off
- Patent number 4,674,174
- Issue date Jun 23, 1987
- Kabushiki Kaisha Toshiba
- Yoshihiro Kishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electrode pattern of semiconductor device
- Patent number 4,650,543
- Issue date Mar 17, 1987
- Kabushiki Kaisha Toshiba
- Yoshihiro Kishita
- H01 - BASIC ELECTRIC ELEMENTS

Yoshihiro Kishita

Person

Patents Grantslast 30 patents

Semiconductor device with insulating resin layer and substrate havi...

Method of manufacturing a compound semiconductor device having gate...

Compound semiconductor integrated circuit having improved electrode...

Semiconductor device with a 3-ply gate electrode

GAAS semiconductor device

Method for forming a conductor pattern using lift-off

Method of forming electrode pattern of semiconductor device