Yoshihisa Fujii

Person

Ikoma-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor laser device and fabricating method thereof
- Patent number 6,940,884
- Issue date Sep 6, 2005
- Sharp Kabushiki Kaisha
- Yoshinori Ohitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser element, method for manufacturing the same, and...
- Patent number 6,771,586
- Issue date Aug 3, 2004
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor laser device and fabricating method thereof
- Patent number 6,618,415
- Issue date Sep 9, 2003
- Sharp Kabushiki Kaisha
- Yoshinori Ohitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing semiconductor laser device
- Patent number 6,176,968
- Issue date Jan 23, 2001
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor laser device
- Patent number 5,872,020
- Issue date Feb 16, 1999
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode
- Patent number 5,387,804
- Issue date Feb 7, 1995
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode
- Patent number 5,329,141
- Issue date Jul 12, 1994
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 5,319,220
- Issue date Jun 7, 1994
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer silicon carbide light emitting diode having a PN junction
- Patent number 5,313,078
- Issue date May 17, 1994
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the growth of silicon carbide single crystals
- Patent number 5,279,701
- Issue date Jan 18, 1994
- Sharp Kabushiki Kaisha
- Mitsuhiro Shigeta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide light emitting diode and a method for the same
- Patent number 5,243,204
- Issue date Sep 7, 1993
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of SiC single crystals by using a specifi...
- Patent number 5,230,768
- Issue date Jul 27, 1993
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide MOS type field-effect transistor with at least one...
- Patent number 5,216,264
- Issue date Jun 1, 1993
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 5,184,199
- Issue date Feb 2, 1993
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor with improved breakdown vol...
- Patent number 5,170,231
- Issue date Dec 8, 1992
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide FETS
- Patent number 5,135,885
- Issue date Aug 4, 1992
- Sharp Corporation
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with ohmic electrode consistin...
- Patent number 5,124,779
- Issue date Jun 23, 1992
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide light emitting diode having a pn junction
- Patent number 5,063,421
- Issue date Nov 5, 1991
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS structure photosensor
- Patent number 5,049,950
- Issue date Sep 17, 1991
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a silicon carbide semiconductor device
- Patent number 5,030,580
- Issue date Jul 9, 1991
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial growth of SiC on Si
- Patent number 4,865,659
- Issue date Sep 12, 1989
- Sharp Kabushiki Kaisha
- Mitsuhiro Shigeta
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor laser device and fabricating method thereof
- Publication number 20030206566
- Publication date Nov 6, 2003
- Sharp Kabushiki Kaisha
- Yoshinori Ohitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser element, method for manufacturing the same, and...
- Publication number 20020097662
- Publication date Jul 25, 2002
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS

Yoshihisa Fujii

Person

Patents Grantslast 30 patents

Semiconductor laser device and fabricating method thereof

Semiconductor laser element, method for manufacturing the same, and...

Semiconductor laser device and fabricating method thereof

Method and apparatus for producing semiconductor laser device

Method for producing semiconductor laser device

Light emitting diode

Light emitting diode

Silicon carbide semiconductor device

Multi-layer silicon carbide light emitting diode having a PN junction

Method for the growth of silicon carbide single crystals

Silicon carbide light emitting diode and a method for the same

Method for the production of SiC single crystals by using a specifi...

Silicon carbide MOS type field-effect transistor with at least one...

Silicon carbide semiconductor device

Silicon carbide field-effect transistor with improved breakdown vol...

Method of manufacturing silicon carbide FETS

Silicon carbide semiconductor device with ohmic electrode consistin...

Silicon carbide light emitting diode having a pn junction

MIS structure photosensor

Method for producing a silicon carbide semiconductor device

Heteroepitaxial growth of SiC on Si

Patents Applicationslast 30 patents

Semiconductor laser device and fabricating method thereof

Semiconductor laser element, method for manufacturing the same, and...