Yoshinori Odake

Person

Katano, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating nonvolatile semiconductor memory device
- Patent number 6,872,624
- Issue date Mar 29, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yoshinori Odake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory test circuit and method, nonvolati...
- Patent number 6,538,937
- Issue date Mar 25, 2003
- Matsushita Electric Industrial Co., Ltd.
- Takahiko Hashidzume
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device and method for fabricating...
- Patent number 6,274,901
- Issue date Aug 14, 2001
- Matsushita Electric Industrial Co., Ltd.
- Yoshinori Odake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing the same
- Patent number 6,165,825
- Issue date Dec 26, 2000
- Matsushita Electronics Corporation
- Yoshinori Odake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating nonvolatile semiconductor memory device
- Patent number 6,030,869
- Issue date Feb 29, 2000
- Matsushita Electronics Corporation
- Yoshinori Odake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for driving a non-volatile semiconductor memory
- Patent number 5,715,196
- Issue date Feb 3, 1998
- Matsushita Electric Industrial, Co., Ltd.
- Yoshinori Odake
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory having an array of non-volatile m...
- Patent number 5,627,779
- Issue date May 6, 1997
- Matsushita Electric Industrial Co., Ltd.
- Yoshinori Odake
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory having a ring-shaped floating gate
- Patent number 5,510,639
- Issue date Apr 23, 1996
- Matsushita Electric Industrial Co., Ltd.
- Yasushi Okuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,500,379
- Issue date Mar 19, 1996
- Matsushita Electric Industrial Co., Ltd.
- Yoshinori Odake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having an energy gap for high speed ope...
- Patent number 5,359,554
- Issue date Oct 25, 1994
- Matsushita Electric Industrial Co., Ltd.
- Yoshinori Odake
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Method of fabricating nonvolatile semiconductor memory device
- Publication number 20020106859
- Publication date Aug 8, 2002
- Yoshinori Odake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile semiconductor memory test circuit and method, nonvolati...
- Publication number 20020024862
- Publication date Feb 28, 2002
- Takahiko Hashidzume
- H01 - BASIC ELECTRIC ELEMENTS

Yoshinori Odake

Person

Patents Grantslast 30 patents

Method of fabricating nonvolatile semiconductor memory device

Nonvolatile semiconductor memory test circuit and method, nonvolati...

Nonvolatile semiconductor memory device and method for fabricating...

Semiconductor device and method for producing the same

Method for fabricating nonvolatile semiconductor memory device

Method for driving a non-volatile semiconductor memory

Non-volatile semiconductor memory having an array of non-volatile m...

Non-volatile semiconductor memory having a ring-shaped floating gate

Method of manufacturing semiconductor device

Semiconductor memory device having an energy gap for high speed ope...

Patents Applicationslast 30 patents

Method of fabricating nonvolatile semiconductor memory device

Nonvolatile semiconductor memory test circuit and method, nonvolati...