Yoshitomo SAGAE

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SOI substrate with acceptor-doped layer
- Patent number 9,142,565
- Issue date Sep 22, 2015
- Kabushiki Kaisha Toshiba
- Yoshitomo Sagae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switch and wireless device
- Patent number 8,923,781
- Issue date Dec 30, 2014
- Kabushiki Kaisha Toshiba
- Yugo Kunishi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High-frequency switch
- Patent number 8,698,574
- Issue date Apr 15, 2014
- Kabushiki Kaisha Toshiba
- Masayuki Sugiura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor switch
- Patent number 8,232,827
- Issue date Jul 31, 2012
- Kabushiki Kaisha Toshiba
- Yoshitomo Sagae
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Radio frequency semiconductor device
- Patent number 8,134,224
- Issue date Mar 13, 2012
- Kabushiki Kaisha Toshiba
- Yoshitomo Sagae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, communication device, and semiconductor devic...
- Patent number 7,468,543
- Issue date Dec 23, 2008
- Kabushiki Kaisha Toshiba
- Yoshitomo Sagae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with a GaAs substrate and a SiGe base or collector
- Patent number 7,157,749
- Issue date Jan 2, 2007
- Kabushiki Kaisha Toshiba
- Hidetoshi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching circuit
- Patent number 7,148,737
- Issue date Dec 12, 2006
- Kabushiki Kaisha Toshiba
- Toshiki Seshita
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Heterojunction type compound semiconductor field effect transistor...
- Patent number 6,936,870
- Issue date Aug 30, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130270640
- Publication date Oct 17, 2013
- Yoshitomo SAGAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120146176
- Publication date Jun 14, 2012
- KABUSHIKI KAISHA TOSHIBA
- Yoshitomo SAGAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY SWITCH
- Publication number 20120038411
- Publication date Feb 16, 2012
- Kabushiki Kaisha Toshiba
- Masayuki Sugiura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR SWITCH AND WIRELESS DEVICE
- Publication number 20110159822
- Publication date Jun 30, 2011
- Kabushiki Kaisha Toshiba
- Yugo Kunishi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR SWITCH
- Publication number 20110050288
- Publication date Mar 3, 2011
- Kabushiki Kaisha Toshiba
- Yoshitomo Sagae
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RADIO FREQUENCY SWITCH CIRCUIT
- Publication number 20090181630
- Publication date Jul 16, 2009
- Kabushiki Kaisha Toshiba
- Toshiki Seshita
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080224253
- Publication date Sep 18, 2008
- Kabushiki Kaisha Toshiba
- Yoshitomo SAGAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20080064358
- Publication date Mar 13, 2008
- Kabushiki Kaisha Toshiba
- Yoshitomo Sagae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor switching circuit
- Publication number 20060082408
- Publication date Apr 20, 2006
- Kabushiki Kaisha Toshiba
- Toshiki Seshita
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High-frequency switch circuit and high-frequency transmitting/recei...
- Publication number 20050239415
- Publication date Oct 27, 2005
- Yoshitomo Sagae
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
High-frequency switch apparatus
- Publication number 20050190691
- Publication date Sep 1, 2005
- Toshiki Seshita
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Bipolar transistor and method of manufacturing the same
- Publication number 20050189565
- Publication date Sep 1, 2005
- Kabushiki Kaisha Toshiba
- Hidetoshi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device, communication device, and semiconductor devic...
- Publication number 20050093026
- Publication date May 5, 2005
- Kabushiki Kaisha Toshiba
- Yoshitomo Sagae
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Heterojunction type compound semiconductor field effect transistor...
- Publication number 20040164317
- Publication date Aug 26, 2004
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS

Yoshitomo SAGAE

Person

Patents Grantslast 30 patents

SOI substrate with acceptor-doped layer

Semiconductor switch and wireless device

High-frequency switch

Semiconductor switch

Radio frequency semiconductor device

Semiconductor device, communication device, and semiconductor devic...

Bipolar transistor with a GaAs substrate and a SiGe base or collector

Semiconductor switching circuit

Heterojunction type compound semiconductor field effect transistor...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

HIGH-FREQUENCY SWITCH

SEMICONDUCTOR SWITCH AND WIRELESS DEVICE

SEMICONDUCTOR SWITCH

RADIO FREQUENCY SWITCH CIRCUIT

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

Semiconductor switching circuit

High-frequency switch circuit and high-frequency transmitting/recei...

High-frequency switch apparatus

Bipolar transistor and method of manufacturing the same

Semiconductor device, communication device, and semiconductor devic...

Heterojunction type compound semiconductor field effect transistor...