Yoshiyuki Yonezawa

Person

Nagano, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,282,919
- Issue date Mar 22, 2022
- National Institute of Advanced Industrial Science and Technology
- Ryoji Kosugi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...
- Patent number 10,354,867
- Issue date Jul 16, 2019
- Fuji Electric Co., Ltd.
- Hidekazu Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device manufacturing method
- Patent number 10,026,610
- Issue date Jul 17, 2018
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and production method thereof
- Patent number 9,856,582
- Issue date Jan 2, 2018
- Fuji Electric Co., Ltd.
- Mina Ryo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device manufacturing method and silic...
- Patent number 9,418,840
- Issue date Aug 16, 2016
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and fabrication method of semiconductor device
- Patent number 9,257,544
- Issue date Feb 9, 2016
- Fuji Electric Co., Ltd.
- Manabu Takei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOS semiconductor device
- Patent number 9,041,006
- Issue date May 26, 2015
- Fuji Electric Co., Ltd.
- Shun-ichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,802,546
- Issue date Aug 12, 2014
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 8,324,631
- Issue date Dec 4, 2012
- Fuji Electric Co., Ltd.
- Yoshiyuki Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 8,178,920
- Issue date May 15, 2012
- Fuji Electric Co., Ltd.
- Shun-ichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof with a recess...
- Patent number 7,821,014
- Issue date Oct 26, 2010
- Fuji Electric Systems Co., Ltd.
- Yoshiyuki Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,615,849
- Issue date Nov 10, 2009
- Fuji Electric Holdings Co., Ltd.
- Shun-Ichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Birefringence distribution measuring method
- Patent number 5,587,793
- Issue date Dec 24, 1996
- Nakai; Sadao
- Sadao Nakai
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210111245
- Publication date Apr 15, 2021
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Ryoji KOSUGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...
- Publication number 20180012758
- Publication date Jan 11, 2018
- Fuji Electric Co., Ltd.
- Hidekazu TSUCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILIC...
- Publication number 20150380243
- Publication date Dec 31, 2015
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20150311328
- Publication date Oct 29, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Manabu Takei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20150214049
- Publication date Jul 30, 2015
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20140065800
- Publication date Mar 6, 2014
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF
- Publication number 20120237428
- Publication date Sep 20, 2012
- Fuji Electric Co., Ltd.
- Mina RYO
- C30 - CRYSTAL GROWTH
Information Patent Application
Filtered cathodic arc device and carbon protective film deposited u...
- Publication number 20100314247
- Publication date Dec 16, 2010
- Fuji Electric Device Technology Co., LTD.
- Shinya Takashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20100019250
- Publication date Jan 28, 2010
- Fuji Electric Holdings Co., Ltd.
- Shun-ichi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOS SEMICONDUCTOR DEVICE
- Publication number 20090236612
- Publication date Sep 24, 2009
- Fuji Electric Device Technology Co., LTD.
- Shun-ichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20080318359
- Publication date Dec 25, 2008
- Fuji Electric Device Technology Co., LTD.
- Yoshiyuki Yonezawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20080079008
- Publication date Apr 3, 2008
- FUJI ELECTRIC HOLDINGS CO., LTD.
- Yoshiyuki YONEZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20070243722
- Publication date Oct 18, 2007
- Fuji Electric Holdings Co., Ltd.
- Shun-ichi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20070210316
- Publication date Sep 13, 2007
- Fuji Electric Holdings Co., Ltd.
- Yoshiyuki YONEZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20070187695
- Publication date Aug 16, 2007
- Fuji Electric Holdings Co., Ltd.
- Shun-ichi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICODUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20070057262
- Publication date Mar 15, 2007
- FUJI ELECTRIC HOLDING CO., LTD.
- Shun-Ichi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiyuki Yonezawa

Person

Patents Grantslast 30 patents

Semiconductor device

Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...

Silicon carbide semiconductor device manufacturing method

SiC single crystal and production method thereof

Silicon carbide semiconductor device manufacturing method and silic...

Semiconductor device and fabrication method of semiconductor device

Silicon carbide MOS semiconductor device

Method for manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device and method for manufacturing t...

Semiconductor device and method of forming the same

Semiconductor device and manufacturing method thereof with a recess...

Semiconductor device and manufacturing method thereof

Birefringence distribution measuring method

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...

SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILIC...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SIC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF

Filtered cathodic arc device and carbon protective film deposited u...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SILICON CARBIDE MOS SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICODUCTOR DEVICE AND MANUFACTURING METHOD THEREOF