Yu Hwan Ro

Person

Seongnam-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Voltage control method to minimize a coupling noise between adjacen...
- Patent number 8,837,234
- Issue date Sep 16, 2014
- Samsung Electronics Co., Ltd.
- Yu Hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and method for controlling word line or b...
- Patent number 8,305,806
- Issue date Nov 6, 2012
- Samsung Electronics Co., Ltd.
- Joon-Yong Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change random access memory and method of setting boot block...
- Patent number 8,250,289
- Issue date Aug 21, 2012
- Samsung Electronics Co., Ltd.
- Yu-hwan Ro
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Resistance variable memory devices and read methods thereof
- Patent number 8,243,542
- Issue date Aug 14, 2012
- Samsung Electronics Co., Ltd.
- Junsoo Bae
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device and method of manufacturing the same
- Patent number 8,116,129
- Issue date Feb 14, 2012
- Samsung Electronics Co., Ltd.
- Yu-hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile phase-change memory device and method of reading the same
- Patent number 7,885,098
- Issue date Feb 8, 2011
- Samsung Electronics Co., Ltd.
- Yu-Hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device using a variable resistive element and as...
- Patent number 7,817,479
- Issue date Oct 19, 2010
- Samsung Electronics Co., Ltd.
- Yu-Hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device and method of manufacturing the same
- Patent number 7,808,815
- Issue date Oct 5, 2010
- Samsung Electronics Co., Ltd.
- Yu-hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system including a resistance variable memory device
- Patent number 7,668,007
- Issue date Feb 23, 2010
- Samsung Electronics Co., Ltd.
- Byung-Gil Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change random access memory and method of testing the same
- Patent number 7,573,766
- Issue date Aug 11, 2009
- Samsung Electronics Co., Ltd.
- Byung-gil Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device and related programming method
- Patent number 7,522,449
- Issue date Apr 21, 2009
- Samsung Electronics Co., Ltd.
- Yu-Hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory devices and program methods
- Patent number 7,499,316
- Issue date Mar 3, 2009
- Samsung Electronics Co., Ltd.
- Byung-Gil Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-changeable memory device and method of programming the same
- Patent number 7,486,536
- Issue date Feb 3, 2009
- Samsung Electronics Co., Ltd.
- Hye-Jin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-changeable memory device and read method thereof
- Patent number 7,391,644
- Issue date Jun 24, 2008
- Samsung Electronics Co., Ltd.
- Woo-Yeong Cho
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
VOLTAGE CONTROL METHOD AND MEMORY DEVICE USING THE SAME
- Publication number 20120039141
- Publication date Feb 16, 2012
- Samsung Electronics Co., Ltd.
- Yu Hwan RO
- G11 - INFORMATION STORAGE
Information Patent Application
Variable Resistance Memory Device and Method of Manufacturing the Same
- Publication number 20100320433
- Publication date Dec 23, 2010
- Yu-hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile memory device and method for controlling word line or b...
- Publication number 20100284221
- Publication date Nov 11, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Joon-Yong Choi
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE VARIABLE MEMORY DEVICES AND READ METHODS THEREOF
- Publication number 20100118595
- Publication date May 13, 2010
- Samsung Electronics Co., Ltd.
- Junsoo Bae
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY AND METHOD OF SETTING BOOT BLOCK...
- Publication number 20090235036
- Publication date Sep 17, 2009
- Yu-hwan RO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE MEMORY DEVICE USING A VARIABLE RESISTIVE ELEMENT AND AS...
- Publication number 20090003048
- Publication date Jan 1, 2009
- Samsung Electronics Co., Ltd.
- Yu-Hwan RO
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE VARIABLE MEMORY DEVICE AND READ METHOD THEREOF
- Publication number 20080232161
- Publication date Sep 25, 2008
- Samsung Electronics Co., Ltd.
- Byung-Gil Choi
- G11 - INFORMATION STORAGE
Information Patent Application
Variable Resistance Memory Device and Method of Manufacturing the Same
- Publication number 20080089105
- Publication date Apr 17, 2008
- Yu-hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory device and related programming method
- Publication number 20080074918
- Publication date Mar 27, 2008
- Yu-Hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change random access memory and method of testing the same
- Publication number 20080062741
- Publication date Mar 13, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Byung-gil Choi
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory devices and program methods
- Publication number 20070230239
- Publication date Oct 4, 2007
- Byung-Gil Choi
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-changeable memory device and read method thereof
- Publication number 20070133271
- Publication date Jun 14, 2007
- Woo-Yeong Cho
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile phase-change memory device and method of reading the same
- Publication number 20070103972
- Publication date May 10, 2007
- Yu-Hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-changeable memory device and method of programming the same
- Publication number 20070008769
- Publication date Jan 11, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Hye-Jin Kim
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Voltage control method to minimize a coupling noise between adjacen...

Nonvolatile memory device and method for controlling word line or b...

Phase-change random access memory and method of setting boot block...

Resistance variable memory devices and read methods thereof

Variable resistance memory device and method of manufacturing the same

Non-volatile phase-change memory device and method of reading the same

Nonvolatile memory device using a variable resistive element and as...

Variable resistance memory device and method of manufacturing the same

Memory system including a resistance variable memory device

Phase change random access memory and method of testing the same

Phase change memory device and related programming method

Phase change memory devices and program methods

Phase-changeable memory device and method of programming the same

Phase-changeable memory device and read method thereof

Patents Applicationslast 30 patents

VOLTAGE CONTROL METHOD AND MEMORY DEVICE USING THE SAME

Variable Resistance Memory Device and Method of Manufacturing the Same

Nonvolatile memory device and method for controlling word line or b...

RESISTANCE VARIABLE MEMORY DEVICES AND READ METHODS THEREOF

PHASE-CHANGE RANDOM ACCESS MEMORY AND METHOD OF SETTING BOOT BLOCK...

NONVOLATILE MEMORY DEVICE USING A VARIABLE RESISTIVE ELEMENT AND AS...

RESISTANCE VARIABLE MEMORY DEVICE AND READ METHOD THEREOF

Variable Resistance Memory Device and Method of Manufacturing the Same

Phase change memory device and related programming method

Phase change random access memory and method of testing the same

Phase change memory devices and program methods

Phase-changeable memory device and read method thereof

Non-volatile phase-change memory device and method of reading the same

Phase-changeable memory device and method of programming the same