Yu Zhu

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device isolation using preferential oxidation of the bulk substrate
- Patent number 10,978,562
- Issue date Apr 13, 2021
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar switching operation of confined phase change memory for a m...
- Patent number 10,825,514
- Issue date Nov 3, 2020
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void control of confined phase change memory
- Patent number 10,692,574
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation using preferential oxidation of the bulk substrate
- Patent number 10,559,666
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench metal-alloying for III-V nFETs
- Patent number 10,366,918
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void control of confined phase change memory
- Patent number 10,319,440
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation using preferential oxidation of the bulk substrate
- Patent number 10,249,719
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation using preferential oxidation of the bulk substrate
- Patent number 10,243,050
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet clean process for removing CxHyFz etch residue
- Patent number 10,167,443
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Robert L. Bruce
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Grant
Contact resistance reduction by III-V Ga deficient surface
- Patent number 10,043,711
- Issue date Aug 7, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation using preferential oxidation of the bulk substrate
- Patent number 9,865,688
- Issue date Jan 9, 2018
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance reduction by III-V Ga deficient surface
- Patent number 9,679,967
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet clean process for removing CxHyFz etch residue
- Patent number 9,536,731
- Issue date Jan 3, 2017
- International Business Machines Corporation
- Robert L. Bruce
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Grant
Deposition on a nanowire using atomic layer deposition
- Patent number 9,437,677
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Dechao Guo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxial growth of CZT(S,Se) on silicon
- Patent number 9,287,426
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted semiconductor nanowire
- Patent number 9,159,834
- Issue date Oct 13, 2015
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Deposition on a nanowire using atomic layer deposition
- Patent number 8,900,935
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Dechao Guo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer
- Patent number 8,865,556
- Issue date Oct 21, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistors with self-aligned gates
- Patent number 8,809,153
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Graphene transistors with self-aligned gates
- Patent number 8,803,130
- Issue date Aug 12, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Thermally insulated phase change material cells
- Patent number 8,772,906
- Issue date Jul 8, 2014
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistor with a self-aligned gate
- Patent number 8,753,965
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Phaedon Avouris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistor with a self-aligned gate
- Patent number 8,680,512
- Issue date Mar 25, 2014
- International Business Machines Corporation
- Phaedon Avouris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) and method of forming the FET without...
- Patent number 8,598,664
- Issue date Dec 3, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally insulated phase change material memory cells
- Patent number 8,536,675
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally insulated phase material cells
- Patent number 8,466,006
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide contact formation
- Patent number 8,404,589
- Issue date Mar 26, 2013
- International Business Machines Corporation
- Andrew J. Kellock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistor with a self-aligned gate
- Patent number 8,344,358
- Issue date Jan 1, 2013
- International Business Machines Corporation
- Phaedon Avouris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce a via area in a phase change memory cell
- Patent number 8,338,225
- Issue date Dec 25, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) and method of forming the FET without...
- Patent number 8,324,110
- Issue date Dec 4, 2012
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
- Publication number 20200144375
- Publication date May 7, 2020
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SWITCHING OPERATION OF CONFINED PHASE CHANGE MEMORY FOR A M...
- Publication number 20190325954
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS
- Publication number 20190311945
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOID CONTROL OF CONFINED PHASE CHANGE MEMORY
- Publication number 20190304541
- Publication date Oct 3, 2019
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
- Publication number 20190165109
- Publication date May 30, 2019
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
- Publication number 20180130884
- Publication date May 10, 2018
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
- Publication number 20180130885
- Publication date May 10, 2018
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION BY III-V Ga DEFICIENT SURFACE
- Publication number 20180096893
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS
- Publication number 20180096885
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE
- Publication number 20170044470
- Publication date Feb 16, 2017
- International Business Machines Corporation
- Robert L. Bruce
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Application
Epitaxial Growth of CZT(S,Se) on Silicon
- Publication number 20160093755
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
- Publication number 20150263102
- Publication date Sep 17, 2015
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE
- Publication number 20150118839
- Publication date Apr 30, 2015
- International Business Machines Corporation
- Robert L. Bruce
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Application
FACETED SEMICONDUCTOR NANOWIRE
- Publication number 20140273360
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
FACETED SEMICONDUCTOR NANOWIRE
- Publication number 20140264279
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
- Publication number 20140054700
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
- Publication number 20140057399
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY INSULATED PHASE CHANGE MATERIAL CELLS
- Publication number 20130299768
- Publication date Nov 14, 2013
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES
- Publication number 20130299782
- Publication date Nov 14, 2013
- International Business Machines Corporation
- ALI AFZALI-ARDAKANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES
- Publication number 20130302963
- Publication date Nov 14, 2013
- International Business Machines Corporation
- ALI AFZALI-ARDAKANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH EPITAXY SOURCE AND DRA...
- Publication number 20130270560
- Publication date Oct 17, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH EPITAXY SOURCE AND DRA...
- Publication number 20130270561
- Publication date Oct 17, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE
- Publication number 20130009133
- Publication date Jan 10, 2013
- International Business Machines Corporation
- Phaedon Avouris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE
- Publication number 20120329260
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Phaedon Avouris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition On A Nanowire Using Atomic Layer Deposition
- Publication number 20120326125
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Dechao Guo
- B82 - NANO-TECHNOLOGY
Information Patent Application
Deposition On A Nanowire Using Atomic Layer Deposition
- Publication number 20120187375
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Dechao Guo
- B82 - NANO-TECHNOLOGY
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) AND METHOD OF FORMING THE FET WITHOUT...
- Publication number 20120168834
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY INSULATED PHASE MATERIAL CELLS
- Publication number 20120129313
- Publication date May 24, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY INSULATED PHASE CHANGE MATERIAL MEMORY CELLS
- Publication number 20120126194
- Publication date May 24, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF SILICON CARBIDE ON SAPPHIRE
- Publication number 20120112198
- Publication date May 10, 2012
- International Business Machines Corporation
- Jack O. Chu
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Device isolation using preferential oxidation of the bulk substrate

Bipolar switching operation of confined phase change memory for a m...

Void control of confined phase change memory

Device isolation using preferential oxidation of the bulk substrate

Self-aligned trench metal-alloying for III-V nFETs

Void control of confined phase change memory

Device isolation using preferential oxidation of the bulk substrate

Device isolation using preferential oxidation of the bulk substrate

Wet clean process for removing CxHyFz etch residue

Contact resistance reduction by III-V Ga deficient surface

Device isolation using preferential oxidation of the bulk substrate

Contact resistance reduction by III-V Ga deficient surface

Wet clean process for removing CxHyFz etch residue

Deposition on a nanowire using atomic layer deposition

Epitaxial growth of CZT(S,Se) on silicon

Faceted semiconductor nanowire

Deposition on a nanowire using atomic layer deposition

Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer

Graphene transistors with self-aligned gates

Graphene transistors with self-aligned gates

Thermally insulated phase change material cells

Graphene transistor with a self-aligned gate

Graphene transistor with a self-aligned gate

Field effect transistor (FET) and method of forming the FET without...

Thermally insulated phase change material memory cells

Thermally insulated phase material cells

Silicide contact formation

Graphene transistor with a self-aligned gate

Method to reduce a via area in a phase change memory cell

Field effect transistor (FET) and method of forming the FET without...

Patents Applicationslast 30 patents

DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE

BIPOLAR SWITCHING OPERATION OF CONFINED PHASE CHANGE MEMORY FOR A M...

SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS

VOID CONTROL OF CONFINED PHASE CHANGE MEMORY

DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE

DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE

DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE

CONTACT RESISTANCE REDUCTION BY III-V Ga DEFICIENT SURFACE

SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS

WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE

Epitaxial Growth of CZT(S,Se) on Silicon

DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE

WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE

FACETED SEMICONDUCTOR NANOWIRE

FACETED SEMICONDUCTOR NANOWIRE

Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer

Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer

THERMALLY INSULATED PHASE CHANGE MATERIAL CELLS

GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES

GRAPHENE TRANSISTORS WITH SELF-ALIGNED GATES

METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH EPITAXY SOURCE AND DRA...

METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH EPITAXY SOURCE AND DRA...

A GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE

GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE

Deposition On A Nanowire Using Atomic Layer Deposition

Deposition On A Nanowire Using Atomic Layer Deposition

FIELD EFFECT TRANSISTOR (FET) AND METHOD OF FORMING THE FET WITHOUT...

THERMALLY INSULATED PHASE MATERIAL CELLS

THERMALLY INSULATED PHASE CHANGE MATERIAL MEMORY CELLS

EPITAXIAL GROWTH OF SILICON CARBIDE ON SAPPHIRE