Yuesong He

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for improved performance of flash memory cell...
- Patent number 6,812,521
- Issue date Nov 2, 2004
- Advanced Micro Devices, Inc.
- Yuesong He
- G11 - INFORMATION STORAGE
Information Patent Grant
Effect of doped amorphous Si thickness on better poly 1 contact res...
- Patent number 6,355,522
- Issue date Mar 12, 2002
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process to eliminate ONO fence material in high densi...
- Patent number 6,281,078
- Issue date Aug 28, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming select gate to improve reliability and performanc...
- Patent number 6,204,159
- Issue date Mar 20, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to elimate silicide cracking for nand type flash memory devi...
- Patent number 6,184,084
- Issue date Feb 6, 2001
- Advanced Micro Devices, Inc.
- David Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing contaminate nitrogen from the peripheral gate r...
- Patent number 6,177,312
- Issue date Jan 23, 2001
- Advanced Micro Devices, Inc.
- Yuesong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing memory devices
- Patent number 6,146,795
- Issue date Nov 14, 2000
- Advanced Micro Devices, Inc.
- Jiahua Huang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Nitrogen ion implanted amorphous silicon to produce oxidation resis...
- Patent number 6,114,230
- Issue date Sep 5, 2000
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for preventing P1 punchthrough
- Patent number 6,066,873
- Issue date May 23, 2000
- Advanced Micro Devices, Inc.
- John J. Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly I spacer manufacturing process to eliminate polystringers in h...
- Patent number 6,063,668
- Issue date May 16, 2000
- Advanced Micro Devices, Inc.
- Yuesong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a low barrier height oxide layer on a silicon su...
- Patent number 6,017,786
- Issue date Jan 25, 2000
- Advanced Micro Devices, Inc.
- Yuesong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrower erase distribution for flash memory by smaller poly grain...
- Patent number 5,981,339
- Issue date Nov 9, 1999
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing P1 punchthrough
- Patent number 5,972,749
- Issue date Oct 26, 1999
- Advanced Micro Devices, Inc.
- John J. Wang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method and apparatus for improved performance of flash memory cell...

Effect of doped amorphous Si thickness on better poly 1 contact res...

Manufacturing process to eliminate ONO fence material in high densi...

Method of forming select gate to improve reliability and performanc...

Method to elimate silicide cracking for nand type flash memory devi...

Method for removing contaminate nitrogen from the peripheral gate r...

Method for manufacturing memory devices

Nitrogen ion implanted amorphous silicon to produce oxidation resis...

Method and apparatus for preventing P1 punchthrough

Poly I spacer manufacturing process to eliminate polystringers in h...

Method for forming a low barrier height oxide layer on a silicon su...

Narrower erase distribution for flash memory by smaller poly grain...

Method for preventing P1 punchthrough