Yufeng Li

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Shaanxi, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method to make buried, highly conductive p-type III-nitride layers
- Patent number 11,018,231
- Issue date May 25, 2021
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device concerning III-nitride edge emitting laser diode...
- Patent number 10,554,017
- Issue date Feb 4, 2020
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orderly patterned remote phosphor crystal material and method for p...
- Patent number 10,381,526
- Issue date Aug 13, 2019
- XI'AN JIAOTONG UNIVERSITY
- Yufeng Li
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Orderly patterned remote phosphor crystal material and method for p...
- Publication number 20180240943
- Publication date Aug 23, 2018
- XI'AN JIAOTONG UNIVERSITY
- Yufeng Li
- C30 - CRYSTAL GROWTH
Information Patent Application
A METHOD AND DEVICE CONCERNING III-NITRIDE EDGE EMITTING LASER DIOD...
- Publication number 20180152003
- Publication date May 31, 2018
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MAKE BURIED, HIGHLY CONDUCTIVE P-TYPE III-NITRIDE LAYERS
- Publication number 20160197151
- Publication date Jul 7, 2016
- Yale University
- Jung Han
- H01 - BASIC ELECTRIC ELEMENTS