Yuh-Jia Su

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for post-etch cleans
- Patent number 8,058,181
- Issue date Nov 15, 2011
- Novellus Systems, Inc.
- David L. Chen
- B08 - CLEANING
Information Patent Grant
Method for post-etch cleans
- Patent number 7,569,492
- Issue date Aug 4, 2009
- Novellus Systems, Inc.
- David L. Chen
- B08 - CLEANING
Information Patent Grant
Methods for post etch cleans
- Patent number 7,390,755
- Issue date Jun 24, 2008
- Novellus Systems, Inc.
- David L. Chen
- B08 - CLEANING
Information Patent Grant
Etch back process approach in dual source plasma reactors
- Patent number 7,160,813
- Issue date Jan 9, 2007
- Novellus Systems, Inc.
- Cindy W. Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for post polysilicon etch photoresist and polymer removal w...
- Patent number 6,955,177
- Issue date Oct 18, 2005
- Novellus Systems, Inc.
- Eddie Chiu
- B08 - CLEANING
Information Patent Grant
Single-tube interlaced inductively coupling plasma source
- Patent number 6,855,225
- Issue date Feb 15, 2005
- Novellus Systems, Inc.
- Yuh-Jia Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor with enhanced plasma uniformity by gas addition, red...
- Patent number 6,125,788
- Issue date Oct 3, 2000
- Applied Materials, Inc.
- Graham W. Hills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electrostatic chuck suitable for magnetic flux...
- Patent number 5,996,218
- Issue date Dec 7, 1999
- Applied Materials Inc.
- Shamouil Shamouilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered dielectric etch in semiconductor devices
- Patent number 5,895,937
- Issue date Apr 20, 1999
- Applied Komatsu Technology, Inc.
- Yuh-Jia (Jim) Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry-etch of indium and tin oxides with C2H5I gas
- Patent number 5,843,277
- Issue date Dec 1, 1998
- Applied Komatsu Technology, Inc.
- Haruhiro Harry Goto
- G02 - OPTICS
Information Patent Grant
Plasma reactor with enhanced plasma uniformity by gas addition, and...
- Patent number 5,744,049
- Issue date Apr 28, 1998
- Applied Materials, Inc.
- Graham W. Hills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered dielectric etch in semiconductor devices
- Patent number 5,728,608
- Issue date Mar 17, 1998
- Applied Komatsu Technology, Inc.
- Yuh-Jia (Jim) Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Focus ring for semiconductor wafer processing in a plasma reactor
- Patent number 5,685,914
- Issue date Nov 11, 1997
- Applied Materials, Inc.
- Graham W. Hills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-rate dry-etch of indium and tin oxides by hydrogen and halogen...
- Patent number 5,607,602
- Issue date Mar 4, 1997
- Applied Komatsu Technology, Inc.
- Yuh-Jia Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic chuck for magnetic flux processing
- Patent number 5,592,358
- Issue date Jan 7, 1997
- Applied Materials, Inc.
- Shamouil Shamouilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas distribution plate for semiconductor wafer processing apparatus...
- Patent number 5,589,002
- Issue date Dec 31, 1996
- Applied Materials, Inc.
- Yuh-Jia Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erosion resistant electrostatic chuck
- Patent number 5,528,451
- Issue date Jun 18, 1996
- Applied Materials, Inc.
- Yuh-Jia Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of cleaning of an electrostatic chuck in plasma reactors
- Patent number 5,507,874
- Issue date Apr 16, 1996
- Applied Materials, Inc.
- Yuh-Jia Su
- B08 - CLEANING
Information Patent Grant
Use of electrostatic forces to reduce particle contamination in sem...
- Patent number 5,410,122
- Issue date Apr 25, 1995
- Applied Materials, Inc.
- Yuh-Jia Su
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SINGLE CHAMBER, MULTIPLE TUBE HIGH EFFICIENCY VERTICAL FURNACE SYSTEM
- Publication number 20080210168
- Publication date Sep 4, 2008
- May Su
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for post-etch cleans

Method for post-etch cleans

Methods for post etch cleans

Etch back process approach in dual source plasma reactors

Methods for post polysilicon etch photoresist and polymer removal w...

Single-tube interlaced inductively coupling plasma source

Plasma reactor with enhanced plasma uniformity by gas addition, red...

Method of forming an electrostatic chuck suitable for magnetic flux...

Tapered dielectric etch in semiconductor devices

Dry-etch of indium and tin oxides with C2H5I gas

Plasma reactor with enhanced plasma uniformity by gas addition, and...

Tapered dielectric etch in semiconductor devices

Focus ring for semiconductor wafer processing in a plasma reactor

High-rate dry-etch of indium and tin oxides by hydrogen and halogen...

Electrostatic chuck for magnetic flux processing

Gas distribution plate for semiconductor wafer processing apparatus...

Erosion resistant electrostatic chuck

Method of cleaning of an electrostatic chuck in plasma reactors

Use of electrostatic forces to reduce particle contamination in sem...

Patents Applicationslast 30 patents

SINGLE CHAMBER, MULTIPLE TUBE HIGH EFFICIENCY VERTICAL FURNACE SYSTEM