Yuichi Oshima

Person

Tsuchiura-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Crystalline multilayer structure, semiconductor device, and method...
- Patent number 11,804,519
- Issue date Oct 31, 2023
- FLOSFIA INC.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline film containing a crystalline metal oxide and method fo...
- Patent number 11,694,894
- Issue date Jul 4, 2023
- FLOSFIA INC.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline film, semiconductor device including crystalline film,...
- Patent number 10,460,934
- Issue date Oct 29, 2019
- FLOSFIA INC.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor crystal producing method including growing ni...
- Patent number 10,060,047
- Issue date Aug 28, 2018
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor substrate and semiconductor device
- Patent number 9,246,049
- Issue date Jan 26, 2016
- Sciocs Company Limited
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride-based semiconductor substrate and semiconductor device
- Patent number 8,829,651
- Issue date Sep 9, 2014
- Hitachi Metals, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor crystal producing method, nitride semiconduct...
- Patent number 8,786,052
- Issue date Jul 22, 2014
- Hitachi Metals, Ltd.
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a group III nitride semiconductor crystal...
- Patent number 8,715,413
- Issue date May 6, 2014
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor substrate production method
- Patent number 8,690,636
- Issue date Apr 8, 2014
- Hitachi Cable, Ltd.
- Yuichi Oshima
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Group III nitride semiconductor substrate production method, and gr...
- Patent number 8,624,356
- Issue date Jan 7, 2014
- Hitachi Metals, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, production method therefor and nit...
- Patent number 8,592,316
- Issue date Nov 26, 2013
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-V nitride based semiconductor substrate and method of mak...
- Patent number 8,143,702
- Issue date Mar 27, 2012
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single-crystal substrate and method for producing GaN single cr...
- Patent number 8,101,939
- Issue date Jan 24, 2012
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating group III nitride semiconductor single crysta...
- Patent number 7,906,412
- Issue date Mar 15, 2011
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Porous substrate and its manufacturing method, and gan semiconducto...
- Patent number 7,829,913
- Issue date Nov 9, 2010
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Moisture curable composition
- Patent number RE41805
- Issue date Oct 5, 2010
- Cemedine Co., Ltd.
- Yasunobu Horie
- 525 - Synthetic resins or natural rubbers
Information Patent Grant
Group III nitride semiconductor substrate
- Patent number 7,791,103
- Issue date Sep 7, 2010
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor substrate, method of making the same an...
- Patent number 7,728,323
- Issue date Jun 1, 2010
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor substrate and method of making the same
- Patent number 7,662,488
- Issue date Feb 16, 2010
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based compound semiconductor substrate and method for fabri...
- Patent number 7,589,345
- Issue date Sep 15, 2009
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making nitride-based compound semiconductor crystal and s...
- Patent number 7,348,278
- Issue date Mar 25, 2008
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III-V nitride-based semiconductor substrate and method of mak...
- Patent number 7,271,404
- Issue date Sep 18, 2007
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially grown nitride-based compound semiconductor crystal subs...
- Patent number 7,196,399
- Issue date Mar 27, 2007
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor substrate and its manufacturing method
- Patent number 7,189,588
- Issue date Mar 13, 2007
- NEC Corporation
- Akira Usui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Porous substrate for epitaxial growth, method for manufacturing sam...
- Patent number 7,118,934
- Issue date Oct 10, 2006
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based semiconductor substrate and process for man...
- Patent number 7,097,920
- Issue date Aug 29, 2006
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate and its production method
- Patent number 7,075,111
- Issue date Jul 11, 2006
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate made of group III nitride, and process for...
- Patent number 6,924,159
- Issue date Aug 2, 2005
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an epitaxially grown nitride-based compound semic...
- Patent number 6,812,051
- Issue date Nov 2, 2004
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moisture curable composition
- Patent number 6,306,966
- Issue date Oct 23, 2001
- Cemedine Co., Ltd.
- Yasunobu Horie
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...

Patents Applicationslast 30 patents

Information Patent Application
GAN CRYSTAL AND GAN SUBSTRATE
- Publication number 20230203711
- Publication date Jun 29, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTAL FILM, AND METH...
- Publication number 20220189769
- Publication date Jun 16, 2022
- FLOSFIA INC.
- Katsuaki KAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN CRYSTAL AND SUBSTRATE
- Publication number 20210384336
- Publication date Dec 9, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE MULTILAYER STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD...
- Publication number 20210335995
- Publication date Oct 28, 2021
- FLOSFIA INC.
- Yuichi OSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE FILM AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210335609
- Publication date Oct 28, 2021
- FLOSFIA INC.
- Yuichi OSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTALLINE FILM,...
- Publication number 20190057865
- Publication date Feb 21, 2019
- FLOSFIA INC.
- Yuichi OSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING CRYSTALLINE FILM
- Publication number 20190055646
- Publication date Feb 21, 2019
- FLOSFIA INC.
- Yuichi OSHIMA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING CRYSTALLINE FILM
- Publication number 20190055667
- Publication date Feb 21, 2019
- FLOSFIA INC.
- Yuichi OSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL, CRYSTALLINE FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTALLI...
- Publication number 20190057866
- Publication date Feb 21, 2019
- FLOSFIA INC.
- Yuichi OSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD
- Publication number 20140196660
- Publication date Jul 17, 2014
- Hitachi Metals, Ltd.
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD, NITRIDE SEMICONDUCT...
- Publication number 20130069075
- Publication date Mar 21, 2013
- Hitachi Cable, Ltd.
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing a group III nitride crystal, method for ma...
- Publication number 20120104557
- Publication date May 3, 2012
- Hitachi Cable, Ltd.
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor substrate, production method therefor and nit...
- Publication number 20110248281
- Publication date Oct 13, 2011
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND...
- Publication number 20110168082
- Publication date Jul 14, 2011
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20110147759
- Publication date Jun 23, 2011
- Hitachi Cable, Ltd.
- Yuichi OSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound semiconductor substrate production method
- Publication number 20100300423
- Publication date Dec 2, 2010
- Hitachi Cable, Ltd.
- Yuichi Oshima
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
Method of fabricating group III nitride semiconductor single crysta...
- Publication number 20100233870
- Publication date Sep 16, 2010
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V nitride based semiconductor substrate and method of mak...
- Publication number 20100200955
- Publication date Aug 12, 2010
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD, AND GR...
- Publication number 20100133657
- Publication date Jun 3, 2010
- HITACHI CABLE, LTD.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE FOR EPITAXIAL GROWTH
- Publication number 20100028605
- Publication date Feb 4, 2010
- Yuichi OSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN single-crystal substrate and method for producing GaN single cr...
- Publication number 20090090917
- Publication date Apr 9, 2009
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride-based semiconductor substrate and semiconductor device
- Publication number 20080315245
- Publication date Dec 25, 2008
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride semiconductor substrate
- Publication number 20080197452
- Publication date Aug 21, 2008
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor ingot, nitride semiconductor substrate fabric...
- Publication number 20080118733
- Publication date May 22, 2008
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, METHOD OF MAKING THE SAME AN...
- Publication number 20070246733
- Publication date Oct 25, 2007
- HITACHI CABLE, LTD.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride-based semiconductor substrate and semiconductor device
- Publication number 20070128753
- Publication date Jun 7, 2007
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride-based semiconductor substrate and method of making the same
- Publication number 20070096147
- Publication date May 3, 2007
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V nitride-based semiconductor substrate and method of mak...
- Publication number 20070051969
- Publication date Mar 8, 2007
- HITACHI CABLE, LTD.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making nitride-based compound semiconductor crystal and s...
- Publication number 20060228819
- Publication date Oct 12, 2006
- HITACHI CABLE, LTD.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V nitride-based semiconductor substrate and method of mak...
- Publication number 20060226414
- Publication date Oct 12, 2006
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH

Yuichi Oshima

Person

Patents Grantslast 30 patents

Crystalline multilayer structure, semiconductor device, and method...

Crystalline film containing a crystalline metal oxide and method fo...

Crystalline film, semiconductor device including crystalline film,...

Nitride semiconductor crystal producing method including growing ni...

Nitride-based semiconductor substrate and semiconductor device

Nitride-based semiconductor substrate and semiconductor device

Nitride semiconductor crystal producing method, nitride semiconduct...

Method for manufacturing a group III nitride semiconductor crystal...

Compound semiconductor substrate production method

Group III nitride semiconductor substrate production method, and gr...

Nitride semiconductor substrate, production method therefor and nit...

Group III-V nitride based semiconductor substrate and method of mak...

GaN single-crystal substrate and method for producing GaN single cr...

Method of fabricating group III nitride semiconductor single crysta...

Porous substrate and its manufacturing method, and gan semiconducto...

Moisture curable composition

Group III nitride semiconductor substrate

Nitride-based semiconductor substrate, method of making the same an...

Nitride-based semiconductor substrate and method of making the same

Nitride-based compound semiconductor substrate and method for fabri...

Method of making nitride-based compound semiconductor crystal and s...

Group III-V nitride-based semiconductor substrate and method of mak...

Epitaxially grown nitride-based compound semiconductor crystal subs...

Group III nitride semiconductor substrate and its manufacturing method

Porous substrate for epitaxial growth, method for manufacturing sam...

Group III nitride based semiconductor substrate and process for man...

Nitride semiconductor substrate and its production method

Semiconductor substrate made of group III nitride, and process for...

Method of forming an epitaxially grown nitride-based compound semic...

Moisture curable composition

Patents Applicationslast 30 patents

GAN CRYSTAL AND GAN SUBSTRATE

CRYSTAL FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTAL FILM, AND METH...

GAN CRYSTAL AND SUBSTRATE

CRYSTALLINE MULTILAYER STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD...

CRYSTALLINE FILM AND METHOD FOR MANUFACTURING THE SAME

CRYSTALLINE FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTALLINE FILM,...

METHOD FOR PRODUCING CRYSTALLINE FILM

METHOD FOR PRODUCING CRYSTALLINE FILM

CRYSTAL, CRYSTALLINE FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTALLI...

NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD

NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD, NITRIDE SEMICONDUCT...

Method for manufacturing a group III nitride crystal, method for ma...

Nitride semiconductor substrate, production method therefor and nit...

MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND...

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD...

Compound semiconductor substrate production method

Method of fabricating group III nitride semiconductor single crysta...

Group III-V nitride based semiconductor substrate and method of mak...

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD, AND GR...

SUBSTRATE FOR EPITAXIAL GROWTH

GaN single-crystal substrate and method for producing GaN single cr...

Nitride-based semiconductor substrate and semiconductor device

Group III nitride semiconductor substrate

Nitride semiconductor ingot, nitride semiconductor substrate fabric...

NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, METHOD OF MAKING THE SAME AN...

Nitride-based semiconductor substrate and semiconductor device

Nitride-based semiconductor substrate and method of making the same

Group III-V nitride-based semiconductor substrate and method of mak...

Method of making nitride-based compound semiconductor crystal and s...

Group III-V nitride-based semiconductor substrate and method of mak...