Yujie Liu

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Sunnyvale, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating a transistor with reduced junction leakage c...
- Patent number 9,368,624
- Issue date Jun 14, 2016
- Mie Fujitsu Semiconductor Limited
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High uniformity screen and epitaxial layers for CMOS devices
- Patent number 9,196,727
- Issue date Nov 24, 2015
- Mie Fujitsu Semiconductor Limited
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deeply depleted MOS transistors having a screening layer and method...
- Patent number 9,041,126
- Issue date May 26, 2015
- Mie Fujitsu Semiconductor Limited
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having reduced junction leakage and methods of forming t...
- Patent number 8,883,600
- Issue date Nov 11, 2014
- SuVolta, Inc.
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High Uniformity Screen and Epitaxial Layers for CMOS Devices
- Publication number 20150333144
- Publication date Nov 19, 2015
- MIE Fujitsu Semiconductor Limited
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH UNIFORMITY SCREEN AND EPITAXIAL LAYERS FOR CMOS DEVICES
- Publication number 20150061012
- Publication date Mar 5, 2015
- SUVOLTA, INC.
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEPLY DEPLETED MOS TRANSISTORS HAVING A SCREENING LAYER AND METHOD...
- Publication number 20140084385
- Publication date Mar 27, 2014
- SUVOLTA, INC.
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTORS IN GERMANIUM AND SILICON-GERMANIU...
- Publication number 20080272394
- Publication date Nov 6, 2008
- Ashok Kumar Kapoor
- H01 - BASIC ELECTRIC ELEMENTS