Yujun Li

Person

Poughkeepie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Process for fabrication of FINFETs
- Patent number 8,614,485
- Issue date Dec 24, 2013
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device fabrication by anisotropic wet etch
- Patent number 7,696,539
- Issue date Apr 13, 2010
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Corner clipping for field effect devices
- Patent number 7,666,741
- Issue date Feb 23, 2010
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabrication of FinFETs
- Patent number 7,470,570
- Issue date Dec 30, 2008
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device fabrication by anisotropic wet etch
- Patent number 7,410,844
- Issue date Aug 12, 2008
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a MOSFET with dual work function materials
- Patent number 7,354,822
- Issue date Apr 8, 2008
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET with dual work function materials
- Patent number 7,294,879
- Issue date Nov 13, 2007
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming a notched gate field effect transistor
- Patent number 7,129,564
- Issue date Oct 31, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pull-back method of forming fins in FinFets
- Patent number 7,018,551
- Issue date Mar 28, 2006
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual work function semiconductor structure with borderless contact...
- Patent number 7,015,552
- Issue date Mar 21, 2006
- International Business Machines Corporation
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel metal oxide semiconductor (NMOS) driver circuit and metho...
- Patent number 6,964,892
- Issue date Nov 15, 2005
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned drain/channel junction in vertical pass transistor DRA...
- Patent number 6,930,004
- Issue date Aug 16, 2005
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual work function semiconductor structure with borderless contact...
- Patent number 6,908,815
- Issue date Jun 21, 2005
- International Business Machines Corporation
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming a notched gate field effect transistor
- Patent number 6,905,976
- Issue date Jun 14, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual work function semiconductor structure with borderless contact...
- Patent number 6,642,584
- Issue date Nov 4, 2003
- International Business Machines Corporation
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a low aspect ratio between the gate and the source/drain
- Patent number 6,528,855
- Issue date Mar 4, 2003
- Infineon Technologies AG
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bitline diffusion with halo for improved array threshold voltage co...
- Patent number 6,444,548
- Issue date Sep 3, 2002
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel metal oxide semiconductor (NMOS) driver circuit and metho...
- Patent number 6,433,397
- Issue date Aug 13, 2002
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an ultra-shallow junction dopant layer having a...
- Patent number 6,387,782
- Issue date May 14, 2002
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for array threshold voltage control by trapped ch...
- Patent number 6,348,394
- Issue date Feb 19, 2002
- International Business Machines Corporation
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-shallow junction dopant layer having a peak concentration wit...
- Patent number 6,329,704
- Issue date Dec 11, 2001
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned channel implantation
- Patent number 6,329,271
- Issue date Dec 11, 2001
- Infineon Technologies AG
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned channel implantation
- Patent number 6,297,530
- Issue date Oct 2, 2001
- Infineon Technologies North America Corp.
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESS FOR FABRICATION OF FINFETs
- Publication number 20090101995
- Publication date Apr 23, 2009
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Fabrication by Anisotropic Wet Etch
- Publication number 20080246059
- Publication date Oct 9, 2008
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FABRICATION OF FINFETs
- Publication number 20080111184
- Publication date May 15, 2008
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Corner clipping for field effect devices
- Publication number 20070167024
- Publication date Jul 19, 2007
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device fabrication by anisotropic wet etch
- Publication number 20070166900
- Publication date Jul 19, 2007
- International Business Machines Corporation
- Yujun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MOSFET WITH DUAL WORK FUNCTION MATERIALS
- Publication number 20070051996
- Publication date Mar 8, 2007
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical MOSFET with dual work function materials
- Publication number 20060163631
- Publication date Jul 27, 2006
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of forming a notched gate field effect transistor
- Publication number 20060157805
- Publication date Jul 20, 2006
- Infineon Technologies AG
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual work function semiconductor structure with borderless contact...
- Publication number 20050199966
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of forming a notched gate field effect transistor
- Publication number 20050158927
- Publication date Jul 21, 2005
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pull-back method of forming fins in FinFETs
- Publication number 20050121412
- Publication date Jun 9, 2005
- International Business Machines Corporation
- Jochen C. Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DRAIN/CHANNEL JUNCTION IN VERTICAL PASS TRANSISTOR DRA...
- Publication number 20050037561
- Publication date Feb 17, 2005
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING A NOTCHED GATE FIELD EFFECT TRANSISTOR
- Publication number 20040222498
- Publication date Nov 11, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual work function semiconductor structure with borderless contact...
- Publication number 20040108555
- Publication date Jun 10, 2004
- International Business Machines Corporation
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET HAVING A LOW ASPECT RATIO BETWEEN THE GATE AND THE SOURCE/DRAIN
- Publication number 20030020120
- Publication date Jan 30, 2003
- Infineon Technologies North America Corp.
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-channel metal oxide semiconductor (NMOS) driver circuit and metho...
- Publication number 20020149063
- Publication date Oct 17, 2002
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual work function semiconductor structure with borderless contact...
- Publication number 20020100904
- Publication date Aug 1, 2002
- International Business Machines Corporation
- Qiuyi Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL METAL OXIDE SEMICONDUCTOR (NMOS) DRIVER CIRCUIT AND METHO...
- Publication number 20020089020
- Publication date Jul 11, 2002
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BITLINE DIFFUSION WITH HALO FOR IMPROVED ARRAY THRESHOLD VOLTAGE CO...
- Publication number 20010046745
- Publication date Nov 29, 2001
- RAMACHANDRA DIVAKARUNI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of forming an ultra-shallow junction dopant layer having a...
- Publication number 20010030333
- Publication date Oct 18, 2001
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Process for fabrication of FINFETs

Device fabrication by anisotropic wet etch

Corner clipping for field effect devices

Process for fabrication of FinFETs

Device fabrication by anisotropic wet etch

Method of forming a MOSFET with dual work function materials

Vertical MOSFET with dual work function materials

Structure and method of forming a notched gate field effect transistor

Pull-back method of forming fins in FinFets

Dual work function semiconductor structure with borderless contact...

N-channel metal oxide semiconductor (NMOS) driver circuit and metho...

Self-aligned drain/channel junction in vertical pass transistor DRA...

Dual work function semiconductor structure with borderless contact...

Structure and method of forming a notched gate field effect transistor

Dual work function semiconductor structure with borderless contact...

MOSFET having a low aspect ratio between the gate and the source/drain

Bitline diffusion with halo for improved array threshold voltage co...

N-channel metal oxide semiconductor (NMOS) driver circuit and metho...

Process of forming an ultra-shallow junction dopant layer having a...

Method and device for array threshold voltage control by trapped ch...

Ultra-shallow junction dopant layer having a peak concentration wit...

Self-aligned channel implantation

Self aligned channel implantation

Patents Applicationslast 30 patents

PROCESS FOR FABRICATION OF FINFETs

Device Fabrication by Anisotropic Wet Etch

PROCESS FOR FABRICATION OF FINFETs

Corner clipping for field effect devices

Device fabrication by anisotropic wet etch

METHOD OF FORMING A MOSFET WITH DUAL WORK FUNCTION MATERIALS

Vertical MOSFET with dual work function materials

Structure and method of forming a notched gate field effect transistor

Dual work function semiconductor structure with borderless contact...

Structure and method of forming a notched gate field effect transistor

Pull-back method of forming fins in FinFETs

SELF-ALIGNED DRAIN/CHANNEL JUNCTION IN VERTICAL PASS TRANSISTOR DRA...

STRUCTURE AND METHOD OF FORMING A NOTCHED GATE FIELD EFFECT TRANSISTOR

Dual work function semiconductor structure with borderless contact...

MOSFET HAVING A LOW ASPECT RATIO BETWEEN THE GATE AND THE SOURCE/DRAIN

N-channel metal oxide semiconductor (NMOS) driver circuit and metho...

Dual work function semiconductor structure with borderless contact...

N-CHANNEL METAL OXIDE SEMICONDUCTOR (NMOS) DRIVER CIRCUIT AND METHO...

BITLINE DIFFUSION WITH HALO FOR IMPROVED ARRAY THRESHOLD VOLTAGE CO...

Process of forming an ultra-shallow junction dopant layer having a...