Yuki NIIYAMA

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor having semiconductor operating layer formed...
- Patent number 9,048,302
- Issue date Jun 2, 2015
- The Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 8,350,293
- Issue date Jan 8, 2013
- Furukawa Electric Co., Ltd.
- Tat-Sing Paul Chow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,309,988
- Issue date Nov 13, 2012
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off field effect transistor using III-nitride semiconducto...
- Patent number 8,093,626
- Issue date Jan 10, 2012
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing field effect transistor
- Patent number 7,998,848
- Issue date Aug 16, 2011
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor device using optical absorption...
- Patent number 7,855,155
- Issue date Dec 21, 2010
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
ED inverter circuit and integrate circuit element including the same
- Patent number 7,821,035
- Issue date Oct 26, 2010
- The Furukawa Electric Co., Ltd.
- Takehiko Nomura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
GaN based semiconductor element
- Patent number 7,812,371
- Issue date Oct 12, 2010
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type semiconductor device and manufacturing method of the...
- Patent number 7,679,104
- Issue date Mar 16, 2010
- The Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20130306980
- Publication date Nov 21, 2013
- ADVANCED POWER DEVICE RESEARCH ASSOCIATION
- Yuki NIIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Normally-off field effect transistor using III-nitride semiconducto...
- Publication number 20100283083
- Publication date Nov 11, 2010
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20100244097
- Publication date Sep 30, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
- Publication number 20100219455
- Publication date Sep 2, 2010
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100219451
- Publication date Sep 2, 2010
- Tat-Sing Paul Chow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing semiconductor device
- Publication number 20090325339
- Publication date Dec 31, 2009
- Yuki Niiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN based semiconductor element
- Publication number 20090278172
- Publication date Nov 12, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ED INVERTER CIRCUIT AND INTEGRATE CIRCUIT ELEMENT INCLUDING THE SAME
- Publication number 20090250767
- Publication date Oct 8, 2009
- THE FURUKAWA ELECTRIC CO., LTD.
- Takehiko Nomura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method of producing field effect transistor
- Publication number 20090246924
- Publication date Oct 1, 2009
- Yuki NIIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090242938
- Publication date Oct 1, 2009
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transister and process for producing the same
- Publication number 20090194790
- Publication date Aug 6, 2009
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE...
- Publication number 20080142837
- Publication date Jun 19, 2008
- THE FURUKAWA ELECTRIC CO., LTD.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS

Yuki NIIYAMA

Person

Patents Grantslast 30 patents

Field effect transistor having semiconductor operating layer formed...

Field effect transistor and method of manufacturing the same

Field effect transistor

Normally-off field effect transistor using III-nitride semiconducto...

Method of producing field effect transistor

Process for producing semiconductor device using optical absorption...

ED inverter circuit and integrate circuit element including the same

GaN based semiconductor element

Vertical type semiconductor device and manufacturing method of the...

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Normally-off field effect transistor using III-nitride semiconducto...

FIELD EFFECT TRANSISTOR

III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Process for producing semiconductor device

GaN based semiconductor element

ED INVERTER CIRCUIT AND INTEGRATE CIRCUIT ELEMENT INCLUDING THE SAME

Method of producing field effect transistor

Field effect transistor

Field effect transister and process for producing the same

VERTICAL TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE...