Yuki TAKIGUCHI

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a semiconductor substrate and device by bo...
- Patent number 11,961,765
- Issue date Apr 16, 2024
- Mitsubishi Electric Corporation
- Shuichi Hiza
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxide semiconductor device and method for manufacturing same
- Patent number 11,239,323
- Issue date Feb 1, 2022
- Mitsubishi Electric Corporation
- Yohei Yuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,222,985
- Issue date Jan 11, 2022
- Mitsubishi Electric Corporation
- Tatsuro Watahiki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240266429
- Publication date Aug 8, 2024
- Mitsubishi Electric Corporation
- Takahiro YAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240234575
- Publication date Jul 11, 2024
- Mitsubishi Electric Corporation
- Yuki TAKIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136439
- Publication date Apr 25, 2024
- Mitsubishi Electric Corporation
- Yuki TAKIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352599
- Publication date Nov 2, 2023
- Mitsubishi Electric Corporation
- Hisashi SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230238296
- Publication date Jul 27, 2023
- Mitsubishi Electric Corporation
- Kunihiko NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230143585
- Publication date May 11, 2023
- Mitsubishi Electric Corporation
- Marika NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD
- Publication number 20230120994
- Publication date Apr 20, 2023
- Mitsubishi Electric Corporation
- Shuichi HIZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NITRIDE S...
- Publication number 20230083507
- Publication date Mar 16, 2023
- Mitsubishi Electric Corporation
- Yuki TAKIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MAN...
- Publication number 20220230920
- Publication date Jul 21, 2022
- Mitsubishi Electric Corporation
- Shuichi HIZA
- C30 - CRYSTAL GROWTH
Information Patent Application
OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20210234009
- Publication date Jul 29, 2021
- Mitsubishi Electric Corporation
- Yohei YUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20200295203
- Publication date Sep 17, 2020
- MITSUBISHI ELECTRIC CORPORATION
- Tatsuro WATAHIKI
- H01 - BASIC ELECTRIC ELEMENTS

Yuki TAKIGUCHI

Person

Patents Grantslast 30 patents

Method for manufacturing a semiconductor substrate and device by bo...

Oxide semiconductor device and method for manufacturing same

Power semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NITRIDE S...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MAN...

OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

POWER SEMICONDUCTOR DEVICE