Yukinori Nakamura

Person

Nagoya City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for fabricating a III-V nitride film
- Patent number 7,955,437
- Issue date Jun 7, 2011
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thin films and a method for producing the same
- Patent number 7,883,750
- Issue date Feb 8, 2011
- NGK Insulators, Ltd.
- Takao Saito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for producing thin films on substrates by plasma CVD
- Patent number 7,303,789
- Issue date Dec 4, 2007
- NGK Insulators, Ltd.
- Takao Saito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor element
- Patent number 7,067,847
- Issue date Jun 27, 2006
- NGK Isulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a III nitride film, an underlayer for fabric...
- Patent number 6,989,202
- Issue date Jan 24, 2006
- NGK Insulators, Ltd.
- Keiichiro Asai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate usable for an acoustic surface wave device, a method for...
- Patent number 6,815,867
- Issue date Nov 9, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial base substrate and epitaxial substrate
- Patent number 6,759,715
- Issue date Jul 6, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconducting nitride film, susceptor tra...
- Patent number 6,727,164
- Issue date Apr 27, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating a III-V nitride film and an apparatus for fa...
- Patent number 6,709,703
- Issue date Mar 23, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating a III nitride film, and underlayer for fabri...
- Patent number 6,649,493
- Issue date Nov 18, 2003
- NGK Insulators, Ltd.
- Keiichiro Asai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride film
- Patent number 6,649,288
- Issue date Nov 18, 2003
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride epitaxial wafer and usage of the same
- Patent number 6,623,877
- Issue date Sep 23, 2003
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth substrate and a method for producing the same
- Patent number 6,554,896
- Issue date Apr 29, 2003
- NGK Insulators, Ltd.
- Keiichiro Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth substrate and a method for producing the same
- Patent number 6,426,519
- Issue date Jul 30, 2002
- NGK Insulators, Ltd.
- Keiichiro Asai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface acoustic wave device, substrate therefor and method of manu...
- Patent number 6,342,748
- Issue date Jan 29, 2002
- NGK Insulators, Ltd.
- Yukinori Nakamura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface acoustic wave device, substrate therefor, and method of man...
- Patent number 6,183,555
- Issue date Feb 6, 2001
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface acoustic wave device, substrate therefor, and method of man...
- Patent number 5,936,329
- Issue date Aug 10, 1999
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
Method and system for forming thin films
- Publication number 20080282981
- Publication date Nov 20, 2008
- NGK Insulators, Ltd.
- Takao Saito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Thin films and a method for producing the same
- Publication number 20060035083
- Publication date Feb 16, 2006
- NGK Insulators, Ltd.
- Takao Saito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating a III nitride film, an underlayer for fabric...
- Publication number 20040247947
- Publication date Dec 9, 2004
- NGK Insulators, Ltd.
- Keiichiro Asai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and system for forming thin films
- Publication number 20040182323
- Publication date Sep 23, 2004
- NGK Insulators, Ltd.
- Takao Saito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Thin films and a method for producing the same
- Publication number 20040161534
- Publication date Aug 19, 2004
- NGK Insulators, Ltd.
- Takao Saito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for fabricating a III-V nitride film
- Publication number 20040132298
- Publication date Jul 8, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a III nitride film, an underlayer for fabric...
- Publication number 20030219634
- Publication date Nov 27, 2003
- NGK Insulators, Ltd.
- Keiichiro Asai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a thin film and apparatus for fabricating a...
- Publication number 20020170495
- Publication date Nov 21, 2002
- NGK Insulators, Ltd.
- Yukinori Nakamura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Mouth ring for forming a honeycomb-shaped green product, method for...
- Publication number 20020172765
- Publication date Nov 21, 2002
- NGK Insulators, Ltd.
- Yukinori Nakamura
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
Semiconductor element
- Publication number 20020125491
- Publication date Sep 12, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a III-V nitride film and an apparatus for fa...
- Publication number 20020124965
- Publication date Sep 12, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating a III nitride film, an underlayer for fabric...
- Publication number 20020123246
- Publication date Sep 5, 2002
- NGK Insulators, Ltd.
- Keiichiro Asai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating a semiconducting nitride film, susceptor tra...
- Publication number 20020119642
- Publication date Aug 29, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating a III-V nitride film and an apparatus for fa...
- Publication number 20020094682
- Publication date Jul 18, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Epitaxial base substrate and epitaxial substrate
- Publication number 20020093055
- Publication date Jul 18, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride film
- Publication number 20020081463
- Publication date Jun 27, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate usable for an acoustic surface wave device, a method for...
- Publication number 20020070636
- Publication date Jun 13, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method for fabricating a III nitride film
- Publication number 20020061655
- Publication date May 23, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III nitride epitaxial wafer and usage of the same
- Publication number 20020058162
- Publication date May 16, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH

Yukinori Nakamura

Person

Patents Grantslast 30 patents

Apparatus for fabricating a III-V nitride film

Thin films and a method for producing the same

Methods for producing thin films on substrates by plasma CVD

Semiconductor element

Method for fabricating a III nitride film, an underlayer for fabric...

Substrate usable for an acoustic surface wave device, a method for...

Epitaxial base substrate and epitaxial substrate

Method for fabricating a semiconducting nitride film, susceptor tra...

Method for fabricating a III-V nitride film and an apparatus for fa...

Method for fabricating a III nitride film, and underlayer for fabri...

Nitride film

III nitride epitaxial wafer and usage of the same

Epitaxial growth substrate and a method for producing the same

Epitaxial growth substrate and a method for producing the same

Surface acoustic wave device, substrate therefor and method of manu...

Surface acoustic wave device, substrate therefor, and method of man...

Surface acoustic wave device, substrate therefor, and method of man...

Patents Applicationslast 30 patents

Method and system for forming thin films

Thin films and a method for producing the same

Method for fabricating a III nitride film, an underlayer for fabric...

Method and system for forming thin films

Thin films and a method for producing the same

Apparatus for fabricating a III-V nitride film

Method for fabricating a III nitride film, an underlayer for fabric...

Method for fabricating a thin film and apparatus for fabricating a...

Mouth ring for forming a honeycomb-shaped green product, method for...

Semiconductor element

Method for fabricating a III-V nitride film and an apparatus for fa...

Method for fabricating a III nitride film, an underlayer for fabric...

Method for fabricating a semiconducting nitride film, susceptor tra...

Method for fabricating a III-V nitride film and an apparatus for fa...

Epitaxial base substrate and epitaxial substrate

Nitride film

Substrate usable for an acoustic surface wave device, a method for...

Method for fabricating a III nitride film

III nitride epitaxial wafer and usage of the same