Yunlong Liu

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-layer polysilicon stack for semiconductor devices
- Patent number 12,080,755
- Issue date Sep 3, 2024
- Texas Instruments Incorporated
- Furen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced ESR in trench capacitor
- Patent number 11,888,021
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,791,198
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a tungsten plug in a semiconductor device
- Patent number 11,532,560
- Issue date Dec 20, 2022
- Texas Instruments Incorporated
- Yunlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual shield oxide damage control
- Patent number 11,417,736
- Issue date Aug 16, 2022
- Texas Instruments Incorporated
- Peng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a lateral insulator
- Patent number 11,322,594
- Issue date May 3, 2022
- Texas Instruments Incorporated
- Fei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,302,568
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with warpage reduction
- Patent number 11,271,072
- Issue date Mar 8, 2022
- Texas Instruments Incorporated
- Jiao Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench gate MOSFET with deep well region for junction term...
- Patent number 11,127,852
- Issue date Sep 21, 2021
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with sinker contacts and methods for manufacturin...
- Patent number 11,037,816
- Issue date Jun 15, 2021
- Texas Instruments Incorporated
- Hong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Power MOSFET with metal filled deep sinker contact for CSP
- Patent number 10,903,345
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with a deep source contact
- Patent number 10,746,890
- Issue date Aug 18, 2020
- Texas Instruments Incorporated
- Furen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having polysilicon field plate for power MOSFETs
- Patent number 10,720,499
- Issue date Jul 21, 2020
- Texas Instruments Incorporated
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench capacitor formed in an epitaxial layer
- Patent number 10,720,490
- Issue date Jul 21, 2020
- Texas Instruments Incorporated
- He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with metal filled deep source contact
- Patent number 10,707,344
- Issue date Jul 7, 2020
- Texas Instruments Incorporated
- Furen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench capacitor formed in an epitaxial layer
- Patent number 10,586,844
- Issue date Mar 10, 2020
- Texas Instruments Incorporated
- He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product and fabrication process
- Patent number 10,573,553
- Issue date Feb 25, 2020
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with warpage reduction
- Patent number 10,559,650
- Issue date Feb 11, 2020
- Texas Instruments Incorporated
- Jiao Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality deep trench oxide
- Patent number 10,347,626
- Issue date Jul 9, 2019
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product and fabrication process
- Patent number 10,211,096
- Issue date Feb 19, 2019
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with a deep source contact
- Patent number 10,068,977
- Issue date Sep 4, 2018
- Texas Instruments Incorporated
- Furen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance sinker contact
- Patent number 9,991,350
- Issue date Jun 5, 2018
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with metal filled deep sinker contact for CSP
- Patent number 9,865,718
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with metal filled deep source contact
- Patent number 9,853,144
- Issue date Dec 26, 2017
- Texas Instruments Incorporated
- Furen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality deep trench oxide
- Patent number 9,825,030
- Issue date Nov 21, 2017
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of making
- Patent number 9,825,138
- Issue date Nov 21, 2017
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench having thick dielectric selectively on bottom portion
- Patent number 9,653,342
- Issue date May 16, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analysis of enhanced oil recovery (EOR) processes for naturally-fra...
- Patent number 9,619,592
- Issue date Apr 11, 2017
- Schlumberger Technology Corporation
- Omer Gurpinar
- E21 - EARTH DRILLING MINING
Information Patent Grant
High quality deep trench oxide
- Patent number 9,461,131
- Issue date Oct 4, 2016
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of making
- Patent number 9,406,774
- Issue date Aug 2, 2016
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MONITOR STRUCTURE FOR PHOTORESIST THICKNESS IN TRENCH
- Publication number 20240361699
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Yunlong Liu
- G01 - MEASURING TESTING
Information Patent Application
REDUCED ESR IN TRENCH CAPACITOR
- Publication number 20240120368
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELDED TRANSISTOR
- Publication number 20240113217
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER POLYSILICON STACK FOR SEMICONDUCTOR DEVICES
- Publication number 20220416014
- Publication date Dec 29, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Furen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED ESR IN TRENCH CAPACITOR
- Publication number 20220406885
- Publication date Dec 22, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20220208601
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHIELD OXIDE DAMAGE CONTROL
- Publication number 20220093754
- Publication date Mar 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Peng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A LATERAL INSULATOR
- Publication number 20220052165
- Publication date Feb 17, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Fei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...
- Publication number 20210272842
- Publication date Sep 2, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
- Publication number 20200335589
- Publication date Oct 22, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20200312710
- Publication date Oct 1, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE MOSFET WITH DEEP WELL REGION FOR JUNCTION TERM...
- Publication number 20200212218
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- SUNGLYONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR WITH WARPAGE REDUCTION
- Publication number 20200161415
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- JIAO JIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRENCH CAPACITOR FORMED IN AN EPITAXIAL LAYER
- Publication number 20200152729
- Publication date May 14, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HE LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
- Publication number 20190296115
- Publication date Sep 26, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR WITH WARPAGE REDUCTION
- Publication number 20190229181
- Publication date Jul 25, 2019
- TEXAS INSTRUMENTS INCORPORATED
- JIAO JIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRENCH CAPACITOR FORMED IN AN EPITAXIAL LAYER
- Publication number 20190229180
- Publication date Jul 25, 2019
- TEXAS INSTRUMENTS INCORPORATED
- HE LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PRODUCT AND FABRICATION PROCESS
- Publication number 20190157142
- Publication date May 23, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET WITH A DEEP SOURCE CONTACT
- Publication number 20190004201
- Publication date Jan 3, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Furen LIN
- G01 - MEASURING TESTING
Information Patent Application
TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...
- Publication number 20180261495
- Publication date Sep 13, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Power MOSFET with a Deep Source Contact
- Publication number 20180204917
- Publication date Jul 19, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Furen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET With Metal Filled Deep Sinker Contact For CSP
- Publication number 20180102424
- Publication date Apr 12, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET WITH METAL FILLED DEEP SOURCE CONTACT
- Publication number 20180076320
- Publication date Mar 15, 2018
- TEXAS INSTRUMENTS INCORPORATED
- FUREN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH QUALITY DEEP TRENCH OXIDE
- Publication number 20180061828
- Publication date Mar 1, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET WITH METAL FILLED DEEP SINKER CONTACT FOR CSP
- Publication number 20180006145
- Publication date Jan 4, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION
- Publication number 20170222041
- Publication date Aug 3, 2017
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET WITH METAL FILLED DEEP SOURCE CONTACT
- Publication number 20170207335
- Publication date Jul 20, 2017
- TEXAS INSTRUMENTS INCORPORATED
- FUREN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH QUALITY DEEP TRENCH OXIDE
- Publication number 20160372463
- Publication date Dec 22, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yufei XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MAKING
- Publication number 20160315155
- Publication date Oct 27, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SINKER CONTACT
- Publication number 20160315159
- Publication date Oct 27, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- H01 - BASIC ELECTRIC ELEMENTS

Yunlong Liu

Person

Patents Grantslast 30 patents

Multi-layer polysilicon stack for semiconductor devices

Reduced ESR in trench capacitor

Trench shield isolation layer

Method of fabricating a tungsten plug in a semiconductor device

Dual shield oxide damage control

Semiconductor device including a lateral insulator

Trench shield isolation layer

Trench capacitor with warpage reduction

Vertical trench gate MOSFET with deep well region for junction term...

Transistor device with sinker contacts and methods for manufacturin...

Power MOSFET with metal filled deep sinker contact for CSP

Power MOSFET with a deep source contact

Semiconductor device having polysilicon field plate for power MOSFETs

Integrated trench capacitor formed in an epitaxial layer

Power MOSFET with metal filled deep source contact

Integrated trench capacitor formed in an epitaxial layer

Semiconductor product and fabrication process

Trench capacitor with warpage reduction

High quality deep trench oxide

Semiconductor product and fabrication process

Power MOSFET with a deep source contact

Low resistance sinker contact

Power MOSFET with metal filled deep sinker contact for CSP

Power MOSFET with metal filled deep source contact

High quality deep trench oxide

Field effect transistor and method of making

Trench having thick dielectric selectively on bottom portion

Analysis of enhanced oil recovery (EOR) processes for naturally-fra...

High quality deep trench oxide

Field effect transistor and method of making

Patents Applicationslast 30 patents

MONITOR STRUCTURE FOR PHOTORESIST THICKNESS IN TRENCH

REDUCED ESR IN TRENCH CAPACITOR

TRENCH SHIELDED TRANSISTOR

MULTI-LAYER POLYSILICON STACK FOR SEMICONDUCTOR DEVICES

REDUCED ESR IN TRENCH CAPACITOR

TRENCH SHIELD ISOLATION LAYER

DUAL SHIELD OXIDE DAMAGE CONTROL

SEMICONDUCTOR DEVICE INCLUDING A LATERAL INSULATOR

TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...

SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS

TRENCH SHIELD ISOLATION LAYER

VERTICAL TRENCH GATE MOSFET WITH DEEP WELL REGION FOR JUNCTION TERM...

TRENCH CAPACITOR WITH WARPAGE REDUCTION

INTEGRATED TRENCH CAPACITOR FORMED IN AN EPITAXIAL LAYER

SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS

TRENCH CAPACITOR WITH WARPAGE REDUCTION

INTEGRATED TRENCH CAPACITOR FORMED IN AN EPITAXIAL LAYER

SEMICONDUCTOR PRODUCT AND FABRICATION PROCESS

POWER MOSFET WITH A DEEP SOURCE CONTACT

TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURIN...

Power MOSFET with a Deep Source Contact

Power MOSFET With Metal Filled Deep Sinker Contact For CSP

POWER MOSFET WITH METAL FILLED DEEP SOURCE CONTACT

HIGH QUALITY DEEP TRENCH OXIDE

POWER MOSFET WITH METAL FILLED DEEP SINKER CONTACT FOR CSP

TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION

POWER MOSFET WITH METAL FILLED DEEP SOURCE CONTACT

HIGH QUALITY DEEP TRENCH OXIDE

FIELD EFFECT TRANSISTOR AND METHOD OF MAKING

LOW RESISTANCE SINKER CONTACT