Yuri Erokhin

Person

Gloucester, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Technique for forming a FinFET device using selective ion implantation
- Patent number 9,190,498
- Issue date Nov 17, 2015
- Varian Semiconductor Equipment Associates, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming low contact resistance device
- Patent number 8,617,955
- Issue date Dec 31, 2013
- Varian Semiconductor Equipment Associates, Inc.
- Andrew Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping of planar or three-dimensional structures at elevated temper...
- Patent number 8,598,025
- Issue date Dec 3, 2013
- Varian Semiconductor Equipment Associates, Inc.
- Louis Steen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer bonding activated by ion implantation
- Patent number 7,939,424
- Issue date May 10, 2011
- Varian Semiconductor Equipment Associates, Inc.
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cleave initiation using varying ion implant dose
- Patent number 7,820,527
- Issue date Oct 26, 2010
- Varian Semiconductor Equipment Associates, Inc.
- Peter Nunan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Internal gettering in SIMOX SOI silicon substrates
- Patent number 7,294,561
- Issue date Nov 13, 2007
- Ibis Technology Corporation
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a high resistivity SIMOX silicon substrate
- Patent number 7,112,509
- Issue date Sep 26, 2006
- Ibis Technology Corporation
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active wafer cooling during damage engineering implant to enhance b...
- Patent number 6,998,353
- Issue date Feb 14, 2006
- Ibis Technology Corporation
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rutherford backscattering detection for use in Ion implantation
- Patent number 6,255,662
- Issue date Jul 3, 2001
- Axcelis Technologies, Inc.
- Leonard Michael Rubin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Technique For Forming A FinFET Device
- Publication number 20140080276
- Publication date Mar 20, 2014
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMING LOW CONTACT RESISTANCE DEVICE
- Publication number 20130015528
- Publication date Jan 17, 2013
- Varian Semiconductor Equipment Associates, Inc.
- Andrew Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING OF PLANAR OR THREE-DIMENSIONAL STRUCTURES AT ELEVATED TEMPER...
- Publication number 20120135578
- Publication date May 31, 2012
- Varian Semiconductor Equipment Associates, Inc.
- Louis Steen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLEAVE INITIATION USING VARYING ION IMPLANT DOSE
- Publication number 20090209084
- Publication date Aug 20, 2009
- Peter Nunan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO-CLEAVE A THIN-FILM OF SILICON FOR SOLAR CELL FABRICATION
- Publication number 20090181492
- Publication date Jul 16, 2009
- Peter Nunan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
UNIFORMITY CONTROL FOR ION BEAM ASSISTED ETCHING
- Publication number 20090084757
- Publication date Apr 2, 2009
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION
- Publication number 20090084988
- Publication date Apr 2, 2009
- Varian Semiconductor Equipment Associates, Inc.
- Julian Blake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER BONDING ACTIVATED BY ION IMPLANTATION
- Publication number 20090081848
- Publication date Mar 26, 2009
- Varian Semiconductor Equipment Associates, Inc.
- Yuri EROKHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR DEPOSITING METALLIC FILMS USING ION IMPLANTATION SURF...
- Publication number 20070184194
- Publication date Aug 9, 2007
- Varian Semiconductor Equipment Associates
- Peter D. Nunan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Reduction of source and drain parasitic capacitance in CMOS devices
- Publication number 20060043531
- Publication date Mar 2, 2006
- Varian Semiconductor Equipment Associates, Inc.
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Internal gettering in SIMOX SOI silicon substrates
- Publication number 20050037596
- Publication date Feb 17, 2005
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE
- Publication number 20040224477
- Publication date Nov 11, 2004
- IBIS TECHNOLOGY CORPORATION
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active wafer cooling during damage engineering implant to enchance...
- Publication number 20030087504
- Publication date May 8, 2003
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS

Yuri Erokhin

Person

Patents Grantslast 30 patents

Technique for forming a FinFET device using selective ion implantation

Method and system for forming low contact resistance device

Doping of planar or three-dimensional structures at elevated temper...

Wafer bonding activated by ion implantation

Cleave initiation using varying ion implant dose

Internal gettering in SIMOX SOI silicon substrates

Method of producing a high resistivity SIMOX silicon substrate

Active wafer cooling during damage engineering implant to enhance b...

Rutherford backscattering detection for use in Ion implantation

Patents Applicationslast 30 patents

Technique For Forming A FinFET Device

METHOD AND SYSTEM FOR FORMING LOW CONTACT RESISTANCE DEVICE

DOPING OF PLANAR OR THREE-DIMENSIONAL STRUCTURES AT ELEVATED TEMPER...

CLEAVE INITIATION USING VARYING ION IMPLANT DOSE

NANO-CLEAVE A THIN-FILM OF SILICON FOR SOLAR CELL FABRICATION

UNIFORMITY CONTROL FOR ION BEAM ASSISTED ETCHING

SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION

WAFER BONDING ACTIVATED BY ION IMPLANTATION

TECHNIQUE FOR DEPOSITING METALLIC FILMS USING ION IMPLANTATION SURF...

Reduction of source and drain parasitic capacitance in CMOS devices

Internal gettering in SIMOX SOI silicon substrates

METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE

Active wafer cooling during damage engineering implant to enchance...