Yushi Hu

Person

Hubei, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,991,880
- Issue date May 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-stack three-dimensional memory device and fabrication meth...
- Patent number 11,968,832
- Issue date Apr 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming channel hole plug of three-dimensional memory de...
- Patent number 11,943,928
- Issue date Mar 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,889,686
- Issue date Jan 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Miao Shen
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,805,646
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication thereof a multi-level vertical memory device...
- Patent number 11,805,643
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,737,263
- Issue date Aug 22, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings...
- Patent number 11,699,657
- Issue date Jul 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,690,219
- Issue date Jun 27, 2023
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,581,322
- Issue date Feb 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,532,636
- Issue date Dec 20, 2022
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level vertical memory device including inter-level channel co...
- Patent number 11,502,094
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings
- Patent number 11,462,474
- Issue date Oct 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,380,701
- Issue date Jul 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for improving channel hole uniformity of a three-dimensional...
- Patent number 11,329,061
- Issue date May 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming channel hole plug of three-dimensional memory de...
- Patent number 11,309,327
- Issue date Apr 19, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,271,004
- Issue date Mar 8, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Source structure of three-dimensional memory device and method for...
- Patent number 11,264,397
- Issue date Mar 1, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,211,397
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,211,393
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,145,667
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 11,133,325
- Issue date Sep 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,049,866
- Issue date Jun 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings
- Patent number 11,031,333
- Issue date Jun 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact (TAC) for three-dimensional memory devices
- Patent number 10,937,806
- Issue date Mar 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 10,910,390
- Issue date Feb 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,892,274
- Issue date Jan 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 10,879,254
- Issue date Dec 29, 2020
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 10,867,678
- Issue date Dec 15, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH STACKED CAPACITORS AND MANUFACTURI...
- Publication number 20240298452
- Publication date Sep 5, 2024
- Wuxi Smart Memories Technologies Co., Ltd.
- Yushi HU
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240292622
- Publication date Aug 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240215257
- Publication date Jun 27, 2024
- Wuxi Smart Memories Technologies Co., Ltd.
- Meilan Guo
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240206191
- Publication date Jun 20, 2024
- Wuxi Smart Memories Technologies Co., Ltd.
- Meilan Guo
Information Patent Application
MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...
- Publication number 20240179911
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20240032293
- Publication date Jan 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20230422504
- Publication date Dec 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230413576
- Publication date Dec 21, 2023
- Wuxi Smart Memories Technologies Co., Ltd.
- Jianhua Sun
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230337423
- Publication date Oct 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20230255025
- Publication date Aug 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGNAL LINES IN MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220328396
- Publication date Oct 13, 2022
- Wuxi Petabyte Technologies Co., Ltd.
- Meilan GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...
- Publication number 20220238556
- Publication date Jul 28, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20210408026
- Publication date Dec 30, 2021
- Yangtze Memory Technologies Co., Ltd.
- Miao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20210398999
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210399001
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210391347
- Publication date Dec 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20210296333
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING A PLURALITY OF NAND STRINGS
- Publication number 20210296341
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Memory Devices and Fabricating Methods Thereof
- Publication number 20210118905
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210118896
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210104532
- Publication date Apr 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20210104531
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Methods for Forming the Same
- Publication number 20210098491
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210098481
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20210082931
- Publication date Mar 18, 2021
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...
- Publication number 20210043651
- Publication date Feb 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210005625
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR...
- Publication number 20210005621
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20200411547
- Publication date Dec 31, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200266211
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qian TAO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices and fabricating methods thereof

Multiple-stack three-dimensional memory device and fabrication meth...

Method for forming channel hole plug of three-dimensional memory de...

Vertical memory devices

Three-dimensional memory devices and methods for forming the same

Method of fabrication thereof a multi-level vertical memory device...

3D NAND memory device and method of forming the same

Three-dimensional memory devices having a plurality of NAND strings...

Three-dimensional memory devices having through array contacts and...

Three-dimensional memory devices having through array contacts and...

Three-dimensional memory devices having through array contacts and...

Multi-level vertical memory device including inter-level channel co...

Three-dimensional memory devices having a plurality of NAND strings

Memory device and forming method thereof

Method for improving channel hole uniformity of a three-dimensional...

Method for forming channel hole plug of three-dimensional memory de...

Memory device and forming method thereof

Source structure of three-dimensional memory device and method for...

Three-dimensional memory devices and methods for forming the same

Memory device and forming method thereof

3D NAND memory device and method of forming the same

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices having through array contacts and...

Three-dimensional memory devices having a plurality of NAND strings

Through array contact (TAC) for three-dimensional memory devices

Memory device and forming method thereof

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory devices having through array contacts and...

Three-dimensional memory devices

Patents Applicationslast 30 patents

FERROELECTRIC MEMORY DEVICE WITH STACKED CAPACITORS AND MANUFACTURI...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME

FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME

MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

SIGNAL LINES IN MEMORY DEVICES AND METHODS FOR FORMING THE SAME

METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...

VERTICAL MEMORY DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING A PLURALITY OF NAND STRINGS

Three-Dimensional Memory Devices and Fabricating Methods Thereof

MEMORY DEVICE AND FORMING METHOD THEREOF

MEMORY DEVICE AND FORMING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

Three-Dimensional Memory Devices and Methods for Forming the Same

MEMORY DEVICE AND FORMING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

SOURCE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES