Yushi Inoue

Person

Hamamatsu, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating semiconductor device
- Patent number 6,251,805
- Issue date Jun 26, 2001
- Yamaha Corporation
- Takahisa Yamaha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Converting a hydrogen silsesquioxane film to an oxide using a first...
- Patent number 5,976,966
- Issue date Nov 2, 1999
- Yamaha Corporation
- Yushi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a wiring on a planarized surface
- Patent number 5,940,734
- Issue date Aug 17, 1999
- Yamaha Corporation
- Yushi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming wiring structure
- Patent number 5,904,576
- Issue date May 18, 1999
- Yamaha Corporation
- Takahisa Yamaha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip capable of suppressing cracks in the insulating...
- Patent number 5,885,857
- Issue date Mar 23, 1999
- Yamaha Corporation
- Takahisa Yamaha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming multi-layer wiring utilizing SOG
- Patent number 5,821,162
- Issue date Oct 13, 1998
- Yamaha Corporation
- Takahisa Yamaha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip capable of supressing cracks in insulating layer
- Patent number 5,763,936
- Issue date Jun 9, 1998
- Yamaha Corporation
- Takahisa Yamaha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming multi-layer wiring utilizing hydrogen silsesquiox...
- Patent number 5,750,403
- Issue date May 12, 1998
- Yamaha Corporation
- Yushi Inoue
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Yushi Inoue

Person

Patents Grantslast 30 patents

Method of fabricating semiconductor device

Converting a hydrogen silsesquioxane film to an oxide using a first...

Method of fabricating a wiring on a planarized surface

Method of forming wiring structure

Semiconductor chip capable of suppressing cracks in the insulating...

Method of forming multi-layer wiring utilizing SOG

Semiconductor chip capable of supressing cracks in insulating layer

Method of forming multi-layer wiring utilizing hydrogen silsesquiox...