Yusuke MAEYAMA

Person

Hanno-shi, Saitama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 11,195,907
- Issue date Dec 7, 2021
- Shindengen Electric Manufacturing Co., Ltd.
- Akihiko Shibukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide gap semiconductor device and method of manufacturing the same
- Patent number 9,960,228
- Issue date May 1, 2018
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke Maeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide (SiC) semiconductor device...
- Patent number 9,496,366
- Issue date Nov 15, 2016
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke Maeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 8,937,319
- Issue date Jan 20, 2015
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke Maeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing junction semiconductor device
- Patent number 7,544,552
- Issue date Jun 9, 2009
- Honda Motor Co., Ltd.
- Ken-ichi Nonaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WIDE GAP SEMICONDUCTOR DEVICE
- Publication number 20230246111
- Publication date Aug 3, 2023
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING WIDE GAP...
- Publication number 20230042772
- Publication date Feb 9, 2023
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20200357882
- Publication date Nov 12, 2020
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Akihiko SHIBUKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Gap Semiconductor Device and Method of Manufacturing the Same
- Publication number 20170263697
- Publication date Sep 14, 2017
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160056260
- Publication date Feb 25, 2016
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20120228636
- Publication date Sep 13, 2012
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20110169015
- Publication date Jul 14, 2011
- Honda Motor Co., Ltd.
- Yuki Negoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC semiconductor device
- Publication number 20060214268
- Publication date Sep 28, 2006
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Yusuke Maeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing junction semiconductor device
- Publication number 20060216879
- Publication date Sep 28, 2006
- HONDA MOTOR CO., LTD.
- Ken-ichi Nonaka
- H01 - BASIC ELECTRIC ELEMENTS

Yusuke MAEYAMA

Person

Patents Grantslast 30 patents

Semiconductor device and semiconductor device manufacturing method

Wide gap semiconductor device and method of manufacturing the same

Method for manufacturing silicon carbide (SiC) semiconductor device...

Schottky barrier diode

Method for manufacturing junction semiconductor device

Patents Applicationslast 30 patents

WIDE GAP SEMICONDUCTOR DEVICE

WIDE GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING WIDE GAP...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Wide Gap Semiconductor Device and Method of Manufacturing the Same

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SCHOTTKY BARRIER DIODE

BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SiC semiconductor device

Method for manufacturing junction semiconductor device