Yusuke Yoshizumi

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 11,094,537
- Issue date Aug 17, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,600,676
- Issue date Mar 24, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B32 - LAYERED PRODUCTS
Information Patent Grant
Semiconductor stack, light-receiving device, and method for produci...
- Patent number 10,158,035
- Issue date Dec 18, 2018
- Sumitomo Electric Industries, Ltd.
- Takuma Fuyuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystal substrate, epilayer-containing group III...
- Patent number 10,113,248
- Issue date Oct 30, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,917,004
- Issue date Mar 13, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered semiconductor having base layer including GaN substrate
- Patent number 9,825,134
- Issue date Nov 21, 2017
- Sumitomo Electric Industries, Ltd
- Fuminori Mitsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystal substrate, epilayer-containing group III...
- Patent number 9,708,735
- Issue date Jul 18, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrate, epilayer-containing group III...
- Patent number 9,499,925
- Issue date Nov 22, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor light emitting device
- Patent number 9,231,370
- Issue date Jan 5, 2016
- Sumitomo Electric Industries, Ltd
- Takamichi Sumitomo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,136,337
- Issue date Sep 15, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor laser device and method for fabricating I...
- Patent number 8,953,656
- Issue date Feb 10, 2015
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group-III nitride semiconductor laser device, and method for fabric...
- Patent number 8,929,416
- Issue date Jan 6, 2015
- Sumitomo Electric Industries, Ltd
- Shimpei Takagi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride semiconductor optical device
- Patent number 8,927,962
- Issue date Jan 6, 2015
- Sumitomo Electric Industries, Ltd
- Masaki Ueno
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor laser, epitaxial substrate
- Patent number 8,923,354
- Issue date Dec 30, 2014
- Takashi Kyono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor laser diode
- Patent number 8,917,750
- Issue date Dec 23, 2014
- Sumitomo Electric Industries, Ltd
- Masahiro Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride semiconductor light-emitting device
- Patent number 8,829,545
- Issue date Sep 9, 2014
- Sumitomo Electric Industries, Ltd.
- Masaki Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming p-type gallium nitride based semiconductor, metho...
- Patent number 8,815,621
- Issue date Aug 26, 2014
- Sumitomo Electric Industries, Ltd
- Masaki Ueno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride semiconductor device, method for fabricating Grou...
- Patent number 8,809,868
- Issue date Aug 19, 2014
- Sumitomo Electric Industries, Ltd
- Yohei Enya
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride-based semiconductor light-emitting element
- Patent number 8,803,274
- Issue date Aug 12, 2014
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group-III nitride semiconductor laser device, and method of fabrica...
- Patent number 8,772,064
- Issue date Jul 8, 2014
- Sumitomo Electric Industries, Ltd
- Shimpei Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystal substrate, epilayer-containing group III...
- Patent number 8,771,552
- Issue date Jul 8, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor light emitting device and epitaxial substrate
- Patent number 8,748,868
- Issue date Jun 10, 2014
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group-III nitride semiconductor laser device, and method for fabric...
- Patent number 8,741,674
- Issue date Jun 3, 2014
- Sumitomo Electric Industries, Ltd
- Yusuke Yoshizumi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor laser and epitaxial substrate
- Patent number 8,718,110
- Issue date May 6, 2014
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group-III nitride semiconductor laser device, and method for fabric...
- Patent number 8,693,515
- Issue date Apr 8, 2014
- Sumitomo Electric Industries, Ltd
- Yusuke Yoshizumi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride-based semiconductor light-emitting element
- Patent number 8,653,621
- Issue date Feb 18, 2014
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride semiconductor laser diode
- Patent number 8,619,828
- Issue date Dec 31, 2013
- Sumitomo Electronic Industries, Ltd.
- Katsushi Akita
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group-III nitride semiconductor laser device, and method for fabric...
- Patent number 8,594,145
- Issue date Nov 26, 2013
- Sumitomo Electric Industries, Ltd
- Shimpei Takagi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group-III nitride semiconductor laser device, and method for fabric...
- Patent number 8,546,163
- Issue date Oct 1, 2013
- Sumitomo Electric Industries, Ltd
- Yusuke Yoshizumi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-nitride semiconductor laser, and method for fabricating III-nit...
- Patent number 8,548,021
- Issue date Oct 1, 2013
- Sumitomo Electric Industries, Ltd
- Kei Fujii
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20200176305
- Publication date Jun 4, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20180166325
- Publication date Jun 14, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STACK, LIGHT-RECEIVING DEVICE, AND METHOD FOR PRODUCI...
- Publication number 20180122971
- Publication date May 3, 2018
- Sumitomo Electric Industries, Ltd.
- Takuma FUYUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...
- Publication number 20170283988
- Publication date Oct 5, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYERED SEMICONDUCTOR, METHOD FOR PRODUCING THE SAME, AND METHOD FO...
- Publication number 20170207308
- Publication date Jul 20, 2017
- Sumitomo Electric Industries, Ltd.
- Fuminori Mitsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150194442
- Publication date Jul 9, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...
- Publication number 20140291811
- Publication date Oct 2, 2014
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTR...
- Publication number 20140203329
- Publication date Jul 24, 2014
- Summitomo Electric Industries, Ltd
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140103353
- Publication date Apr 17, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...
- Publication number 20140056324
- Publication date Feb 27, 2014
- Sumitomo Electric Industries, Ltd.
- Shimpei TAKAGI
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Device
- Publication number 20130341633
- Publication date Dec 26, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...
- Publication number 20130295704
- Publication date Nov 7, 2013
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR, METHOD OF FABR...
- Publication number 20130285066
- Publication date Oct 31, 2013
- Sumitomo Electric Industries, Ltd.
- Takamichi SUMITOMO
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LASER, EPITAXIAL SUBSTRATE
- Publication number 20130177035
- Publication date Jul 11, 2013
- SONY CORPORATION
- Takashi KYONO
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20130134434
- Publication date May 30, 2013
- Sumitomo Electric Industries, Ltd.
- Hidenori Mikami
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20130051417
- Publication date Feb 28, 2013
- SONY CORPORATION
- Takamichi SUMITOMO
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE
- Publication number 20130051418
- Publication date Feb 28, 2013
- Sumitomo Electric Industries, Ltd.
- Takamichi SUMITOMO
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP...
- Publication number 20130009202
- Publication date Jan 10, 2013
- SONY CORPORATION
- Yohei ENYA
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE,...
- Publication number 20120327967
- Publication date Dec 27, 2012
- SONY CORPORATION
- Yohei ENYA
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND ME...
- Publication number 20120299010
- Publication date Nov 29, 2012
- Sumitomo Electric Industries, Ltd.
- Yohei Enya
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...
- Publication number 20120267606
- Publication date Oct 25, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE
- Publication number 20120269222
- Publication date Oct 25, 2012
- SONY CORPORATION
- Takashi KYONO
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING I...
- Publication number 20120269220
- Publication date Oct 25, 2012
- SONY CORPORATION
- Takashi KYONO
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING...
- Publication number 20120258557
- Publication date Oct 11, 2012
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...
- Publication number 20120223417
- Publication date Sep 6, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...
- Publication number 20120214268
- Publication date Aug 23, 2012
- Sumitomo Electric Industries, Ltd.
- Shimpei TAKAGI
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING T...
- Publication number 20120202304
- Publication date Aug 9, 2012
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING T...
- Publication number 20120184057
- Publication date Jul 19, 2012
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...
- Publication number 20120142130
- Publication date Jun 7, 2012
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICA...
- Publication number 20120135554
- Publication date May 31, 2012
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- H01 - BASIC ELECTRIC ELEMENTS

Yusuke Yoshizumi

Person

Patents Grantslast 30 patents

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Semiconductor stack, light-receiving device, and method for produci...

Group III nitride crystal substrate, epilayer-containing group III...

Group III nitride composite substrate and method for manufacturing...

Layered semiconductor having base layer including GaN substrate

Group III nitride crystal substrate, epilayer-containing group III...

Group III nitride crystal substrate, epilayer-containing group III...

Group III nitride semiconductor light emitting device

Group III nitride composite substrate and method for manufacturing...

III-nitride semiconductor laser device and method for fabricating I...

Group-III nitride semiconductor laser device, and method for fabric...

Group III nitride semiconductor optical device

Nitride semiconductor laser, epitaxial substrate

III-nitride semiconductor laser diode

Group III nitride semiconductor light-emitting device

Method of forming p-type gallium nitride based semiconductor, metho...

Group-III nitride semiconductor device, method for fabricating Grou...

Nitride-based semiconductor light-emitting element

Group-III nitride semiconductor laser device, and method of fabrica...

Group III nitride crystal substrate, epilayer-containing group III...

Nitride semiconductor light emitting device and epitaxial substrate

Group-III nitride semiconductor laser device, and method for fabric...

Nitride semiconductor laser and epitaxial substrate

Group-III nitride semiconductor laser device, and method for fabric...

Nitride-based semiconductor light-emitting element

Group III nitride semiconductor laser diode

Group-III nitride semiconductor laser device, and method for fabric...

Group-III nitride semiconductor laser device, and method for fabric...

III-nitride semiconductor laser, and method for fabricating III-nit...

Patents Applicationslast 30 patents

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

SEMICONDUCTOR STACK, LIGHT-RECEIVING DEVICE, AND METHOD FOR PRODUCI...

GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...

LAYERED SEMICONDUCTOR, METHOD FOR PRODUCING THE SAME, AND METHOD FO...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...

NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTR...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...

Semiconductor Device

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...

METHOD OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR, METHOD OF FABR...

NITRIDE SEMICONDUCTOR LASER, EPITAXIAL SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE

GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE

GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP...

GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE,...

GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND ME...

GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...

NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE

III-NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING I...

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING...

GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...

III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING T...

III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING T...

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRIC...

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICA...