Yutaka Koshino

Person

Ohizumi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Solid state image sensor device with single-layered transfer electr...
- Patent number 5,637,894
- Issue date Jun 10, 1997
- Kabushiki Kaisha Toshiba
- Masako Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device with Schottky elect...
- Patent number 5,229,323
- Issue date Jul 20, 1993
- Kabushiki Kaisha Toshiba
- Kizashi Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically isolated structure for use in soi-type semiconductor...
- Patent number 5,126,817
- Issue date Jun 30, 1992
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar semiconductor device having high breakdown voltage
- Patent number 5,086,332
- Issue date Feb 4, 1992
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making complete dielectric isolation structure in semicon...
- Patent number 5,084,408
- Issue date Jan 28, 1992
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaAs field effect semiconductor device having Schottky gate structure
- Patent number 5,049,954
- Issue date Sep 17, 1991
- Kabushiki Kaisha Toshiba
- Kizashi Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a high breakdown voltage
- Patent number 5,031,021
- Issue date Jul 9, 1991
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a semiconductive protection layer
- Patent number 5,029,324
- Issue date Jul 2, 1991
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded substrate of semiconductor elements having a high withstand...
- Patent number 4,984,052
- Issue date Jan 8, 1991
- Kabushiki Kaisha Toshiba
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Evaluation method for semiconductor device
- Patent number 4,968,932
- Issue date Nov 6, 1990
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- G01 - MEASURING TESTING
Information Patent Grant
Method for manufacturing high-breakdown voltage semiconductor device
- Patent number 4,780,426
- Issue date Oct 25, 1988
- Kabushiki Kaisha Toshiba
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a Schottky FET device using metal sidewal...
- Patent number 4,729,966
- Issue date Mar 8, 1988
- Kabushiki Kaisha Toshiba
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor device
- Patent number 4,710,794
- Issue date Dec 1, 1987
- Kabushiki Kaisha Toshiba
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating Schottky gate-type GaAs field effect transistor
- Patent number 4,700,455
- Issue date Oct 20, 1987
- Kabushiki Kaisha Toshiba
- Kizashi Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling lifetime of minority carriers by electron bea...
- Patent number 4,585,489
- Issue date Apr 29, 1986
- Kabushiki Kaisha Toshiba
- Shun-ichi Hiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 4,566,174
- Issue date Jan 28, 1986
- Tokyo Shibaura Denki Kabushiki Kaisha
- Seiji Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,560,642
- Issue date Dec 24, 1985
- Toyko Shibaura Electric Co., Ltd.
- Toshio Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-layered structure
- Patent number 4,542,400
- Issue date Sep 17, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Shunichi Hiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,532,004
- Issue date Jul 30, 1985
- Kabushiki Kaisha Toshiba
- Tatsuo Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming deep aluminum doped silicon by implanting Al and...
- Patent number 4,515,642
- Issue date May 7, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Takashi Ajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring material for semiconductor device and method for forming wir...
- Patent number 4,502,207
- Issue date Mar 5, 1985
- Toshiba Shibaura Denki Kabushiki Kaisha
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using epitaxially re...
- Patent number 4,479,830
- Issue date Oct 30, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming reproducible impurity zone of gallium or aluminum...
- Patent number 4,426,234
- Issue date Jan 17, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making transistors by ion implantations, electron beam ir...
- Patent number 4,415,372
- Issue date Nov 15, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device of mesa type
- Patent number 4,404,736
- Issue date Sep 20, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using silicon carbid...
- Patent number 4,351,894
- Issue date Sep 28, 1982
- Tokyo Shibaura Electric Co., Ltd.
- Toshio Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS

Yutaka Koshino

Person

Patents Grantslast 30 patents

Solid state image sensor device with single-layered transfer electr...

Method for manufacturing a semiconductor device with Schottky elect...

Dielectrically isolated structure for use in soi-type semiconductor...

Planar semiconductor device having high breakdown voltage

Method of making complete dielectric isolation structure in semicon...

GaAs field effect semiconductor device having Schottky gate structure

Semiconductor device with a high breakdown voltage

Semiconductor device having a semiconductive protection layer

Bonded substrate of semiconductor elements having a high withstand...

Evaluation method for semiconductor device

Method for manufacturing high-breakdown voltage semiconductor device

Process for manufacturing a Schottky FET device using metal sidewal...

Composite semiconductor device

Method of fabricating Schottky gate-type GaAs field effect transistor

Method of controlling lifetime of minority carriers by electron bea...

Semiconductor device and method for manufacturing the same

Method of manufacturing a semiconductor device

Semiconductor device with multi-layered structure

Method of manufacturing a semiconductor device

Method of forming deep aluminum doped silicon by implanting Al and...

Wiring material for semiconductor device and method for forming wir...

Method of manufacturing a semiconductor device using epitaxially re...

Method of forming reproducible impurity zone of gallium or aluminum...

Method of making transistors by ion implantations, electron beam ir...

Method for manufacturing a semiconductor device of mesa type

Method of manufacturing a semiconductor device using silicon carbid...