Zachary K. Lee

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Segmented Schottky diode
- Patent number 11,916,152
- Issue date Feb 27, 2024
- Texas Instruments Incorporated
- Zachary K. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contaminant collection on SOI
- Patent number 11,901,462
- Issue date Feb 13, 2024
- Texas Instruments Incorporated
- Honglin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor on silicon-on-insulator substrate
- Patent number 11,557,662
- Issue date Jan 17, 2023
- Texas Instruments Incorporated
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET using trench isolation as the gate dielectric
- Patent number 11,404,556
- Issue date Aug 2, 2022
- Texas Instruments Incorporated
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI power LDMOS device
- Patent number 10,840,372
- Issue date Nov 17, 2020
- Texas Instruments Incorporated
- Zachary K. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures to avoid floating resurf layer in high voltage lateral d...
- Patent number 10,319,809
- Issue date Jun 11, 2019
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance sinker contact
- Patent number 9,991,350
- Issue date Jun 5, 2018
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI power LDMOS device
- Patent number 9,905,688
- Issue date Feb 27, 2018
- Texas Instruments Incorporated
- Zachary K. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures to avoid floating RESURF layer in high voltage lateral d...
- Patent number 9,876,071
- Issue date Jan 23, 2018
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of making
- Patent number 9,825,138
- Issue date Nov 21, 2017
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep silicon via as a drain sinker in integrated vertical DMOS tran...
- Patent number 9,728,632
- Issue date Aug 8, 2017
- Tower Semiconductor Ltd.
- Sharon Levin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of making
- Patent number 9,406,774
- Issue date Aug 2, 2016
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance sinker contact
- Patent number 9,397,180
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep silicon via as a drain sinker in integrated vertical DMOS tran...
- Patent number 8,921,173
- Issue date Dec 30, 2014
- Tower Semiconductor Ltd.
- Sharon Levin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-CLAMPING RESISTOR AND CIRCUIT FOR TRANSISTOR LINEAR REGION CUR...
- Publication number 20250006728
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Zachary Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATED RESISTOR
- Publication number 20240405018
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Zachary K Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED SCHOTTKY DIODE
- Publication number 20240145602
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- ZACHARY K. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTAMINANT COLLECTION ON SOI
- Publication number 20240145603
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Honglin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTAMINANT COLLECTION ON SOI
- Publication number 20230307557
- Publication date Sep 28, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Honglin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED SCHOTTKY DIODE
- Publication number 20220209025
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- ZACHARY K. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR ON SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20220140116
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET USING TRENCH ISOLATION AS THE GATE DIELECTRIC
- Publication number 20220140105
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE MASK LEVEL FORMING BOTH TOP-SIDE-CONTACT AND ISOLATION TRENCHES
- Publication number 20180358258
- Publication date Dec 13, 2018
- TEXAS INSTRUMENTS INCORPORATED
- ZACHARY K. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI POWER LDMOS DEVICE
- Publication number 20180151725
- Publication date May 31, 2018
- TEXAS INSTRUMENTS INCORPORATED
- ZACHARY K. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20180108729
- Publication date Apr 19, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI POWER LDMOS DEVICE
- Publication number 20170222042
- Publication date Aug 3, 2017
- TEXAS INSTRUMENTS INCORPORATED
- ZACHARY K. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MAKING
- Publication number 20160315155
- Publication date Oct 27, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SINKER CONTACT
- Publication number 20160315159
- Publication date Oct 27, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20160254346
- Publication date Sep 1, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Silicon Via As A Drain Sinker In Integrated Vertical DMOS Tran...
- Publication number 20150123194
- Publication date May 7, 2015
- Tower Semiconductor Ltd.
- Sharon Levin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Silicon Via As A Drain Sinker In Integrated Vertical DMOS Tran...
- Publication number 20130320443
- Publication date Dec 5, 2013
- Tower Semiconductor Ltd.
- Sharon Levin
- H01 - BASIC ELECTRIC ELEMENTS

Zachary K. Lee

Person

Patents Grantslast 30 patents

Segmented Schottky diode

Contaminant collection on SOI

Junction field effect transistor on silicon-on-insulator substrate

FET using trench isolation as the gate dielectric

SOI power LDMOS device

Structures to avoid floating resurf layer in high voltage lateral d...

Low resistance sinker contact

SOI power LDMOS device

Structures to avoid floating RESURF layer in high voltage lateral d...

Field effect transistor and method of making

Deep silicon via as a drain sinker in integrated vertical DMOS tran...

Field effect transistor and method of making

Low resistance sinker contact

Deep silicon via as a drain sinker in integrated vertical DMOS tran...

Patents Applicationslast 30 patents

SELF-CLAMPING RESISTOR AND CIRCUIT FOR TRANSISTOR LINEAR REGION CUR...

FIELD-PLATED RESISTOR

SEGMENTED SCHOTTKY DIODE

CONTAMINANT COLLECTION ON SOI

CONTAMINANT COLLECTION ON SOI

SEGMENTED SCHOTTKY DIODE

JUNCTION FIELD EFFECT TRANSISTOR ON SILICON-ON-INSULATOR SUBSTRATE

FET USING TRENCH ISOLATION AS THE GATE DIELECTRIC

SINGLE MASK LEVEL FORMING BOTH TOP-SIDE-CONTACT AND ISOLATION TRENCHES

SOI POWER LDMOS DEVICE

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

SOI POWER LDMOS DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MAKING

LOW RESISTANCE SINKER CONTACT

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

Deep Silicon Via As A Drain Sinker In Integrated Vertical DMOS Tran...

Deep Silicon Via As A Drain Sinker In Integrated Vertical DMOS Tran...