Zhanyuan Hu

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of Fin field-effect transistor
- Patent number 11,495,502
- Issue date Nov 8, 2022
- Shanghai Huali Integrated Circuit Corporation
- Huojin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth process for semiconductor device and semiconductor...
- Patent number 11,476,114
- Issue date Oct 18, 2022
- Shanghai Huali Integrated Circuit Corporation
- Huojin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a 14nm-node BEOL 32nm-width metal
- Patent number 11,393,715
- Issue date Jul 19, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yongji Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and a manufacturing method of a contact thereof
- Patent number 11,374,102
- Issue date Jun 28, 2022
- SHANGHAI HUALI INTEGRATED CIRCUIT MFG. CO., LTD.
- Yongji Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture method of high-efficiency non-oriented silicon steel wi...
- Patent number 9,816,152
- Issue date Nov 14, 2017
- Baoshan Iron & Steel Co., Ltd.
- Aihua Ma
- C21 - METALLURGY OF IRON

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING RECESS AND FILLING EPITAXIAL LAYER IN SITU
- Publication number 20220102145
- Publication date Mar 31, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yaozeng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Growth Process for Semiconductor Device and Semiconductor...
- Publication number 20210398805
- Publication date Dec 23, 2021
- Shanghai Huali Integrated Circuit Corporation
- Huojin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF FIN FIELD-EFFECT TRANSISTOR
- Publication number 20210375696
- Publication date Dec 2, 2021
- Shanghai Huali Integrated Circuit Corporation
- Huojin TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND A MANUFACTURING METHOD OF A CONTACT THEREOF
- Publication number 20210305383
- Publication date Sep 30, 2021
- Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Yongji MAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a 14nm-Node BEOL 32nm-Width Metal
- Publication number 20210098282
- Publication date Apr 1, 2021
- Shanghai Huali Integrated Circuit Corporation
- Yongji Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURE, AND MANUFACTURING METHOD THEREFOR
- Publication number 20190378907
- Publication date Dec 12, 2019
- Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Shiming WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE METHOD OF HIGH-EFFICIENCY NON-ORIENTED SILICON STEEL WI...
- Publication number 20130199675
- Publication date Aug 8, 2013
- Aihua Ma
- C21 - METALLURGY OF IRON
Information Patent Application
COLD ROLLED ELECTROMAGNETIC STEEL SHEET USED FOR RAPID CYCLING SYNC...
- Publication number 20120318411
- Publication date Dec 20, 2012
- Baoshan Iron & Steel Co., Ltd
- Lingfeng Chen
- C21 - METALLURGY OF IRON
Information Patent Application
Non-Oriented Electrical Steel Having High Magnetic Induction And Hi...
- Publication number 20120298267
- Publication date Nov 29, 2012
- Zhanyuan Hu
- C21 - METALLURGY OF IRON
Information Patent Application
Manufacture Process Of Non-Oriented Silicon Steel With High Magneti...
- Publication number 20120285584
- Publication date Nov 15, 2012
- Zitao Wang
- C21 - METALLURGY OF IRON

Zhanyuan Hu

Person

Patents Grantslast 30 patents

Manufacturing method of Fin field-effect transistor

Epitaxial growth process for semiconductor device and semiconductor...

Method for manufacturing a 14nm-node BEOL 32nm-width metal

FinFET and a manufacturing method of a contact thereof

Manufacture method of high-efficiency non-oriented silicon steel wi...

Patents Applicationslast 30 patents

METHOD FOR FORMING RECESS AND FILLING EPITAXIAL LAYER IN SITU

Epitaxial Growth Process for Semiconductor Device and Semiconductor...

MANUFACTURING METHOD OF FIN FIELD-EFFECT TRANSISTOR

FINFET AND A MANUFACTURING METHOD OF A CONTACT THEREOF

Method for Manufacturing a 14nm-Node BEOL 32nm-Width Metal

TRANSISTOR GATE STRUCTURE, AND MANUFACTURING METHOD THEREFOR

MANUFACTURE METHOD OF HIGH-EFFICIENCY NON-ORIENTED SILICON STEEL WI...

COLD ROLLED ELECTROMAGNETIC STEEL SHEET USED FOR RAPID CYCLING SYNC...

Non-Oriented Electrical Steel Having High Magnetic Induction And Hi...

Manufacture Process Of Non-Oriented Silicon Steel With High Magneti...