Zhaoxu Shen

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating vertical transistor having a silicided bottom
- Patent number 10,971,367
- Issue date Apr 6, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor having a silicided bottom and method for fabric...
- Patent number 10,755,937
- Issue date Aug 25, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor having dual work function materials and method...
- Patent number 10,559,684
- Issue date Feb 11, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method with reduced gate electro...
- Patent number 10,535,750
- Issue date Jan 14, 2020
- Semiconductor Manufacturing International (Beijing) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EPI integrality on source/drain region of FinFET
- Patent number 10,332,980
- Issue date Jun 25, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING VERTICAL TRANSISTOR HAVING A SILICIDED BOTTOM
- Publication number 20200350174
- Publication date Nov 5, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
- Publication number 20200027966
- Publication date Jan 23, 2020
- Semiconductor Manufacturing International (Beijing) Corporation
- Zhaoxu SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR HAVING A SILICIDED BOTTOM AND METHOD FOR FABRIC...
- Publication number 20180294161
- Publication date Oct 11, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR HAVING DUAL WORK FUNCTION MATERIALS AND METHOD...
- Publication number 20180294351
- Publication date Oct 11, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- ZHAOXU SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
- Publication number 20180151696
- Publication date May 31, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- Zhaoxu SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPI INTEGRALITY ON SOURCE/DRAIN REGION OF FINFET
- Publication number 20180006135
- Publication date Jan 4, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhaoxu Shen
- H01 - BASIC ELECTRIC ELEMENTS

Zhaoxu Shen

Person

Patents Grantslast 30 patents

Method for fabricating vertical transistor having a silicided bottom

Vertical transistor having a silicided bottom and method for fabric...

Vertical transistor having dual work function materials and method...

Semiconductor device manufacturing method with reduced gate electro...

EPI integrality on source/drain region of FinFET

Patents Applicationslast 30 patents

METHOD FOR FABRICATING VERTICAL TRANSISTOR HAVING A SILICIDED BOTTOM

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

VERTICAL TRANSISTOR HAVING A SILICIDED BOTTOM AND METHOD FOR FABRIC...

VERTICAL TRANSISTOR HAVING DUAL WORK FUNCTION MATERIALS AND METHOD...

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

EPI INTEGRALITY ON SOURCE/DRAIN REGION OF FINFET