Zhen ZHANG

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trigate device with full silicided epi-less source/drain for high d...
- Patent number 11,075,265
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density nano-array for sensing
- Patent number 10,620,158
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
Solar cell with interdigitated back contacts formed from high and l...
- Patent number 10,396,229
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Joel P. De Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trigate device with full silicided epi-less source/drain for high d...
- Patent number 10,312,321
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density nano-array for sensing
- Patent number 9,753,006
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
Carbon-doped cap for a raised active semiconductor region
- Patent number 9,691,882
- Issue date Jun 27, 2017
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having MIM capacitor with refractory metal silic...
- Patent number 9,659,939
- Issue date May 23, 2017
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density nano-array for sensing
- Patent number 9,612,224
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
MIS-IL silicon solar cell with passivation layer to induce surface...
- Patent number 9,466,755
- Issue date Oct 11, 2016
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition on a nanowire using atomic layer deposition
- Patent number 9,437,677
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Dechao Guo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Colorimetric radiation dosimetry based on functional polymer and na...
- Patent number 9,389,319
- Issue date Jul 12, 2016
- GLOBALFOUNDRIES, INC.
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
Techniques for fabricating Janus sensors
- Patent number 9,251,978
- Issue date Feb 2, 2016
- GLOBALFOUNDRIES Inc.
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
Techniques for fabricating Janus sensors
- Patent number 9,251,979
- Issue date Feb 2, 2016
- GLOBALFOUNDRIES Inc.
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
Niobium thin film stress relieving layer for thin-film solar cells
- Patent number 9,202,943
- Issue date Dec 1, 2015
- International Business Machines Corporation
- Qing Cao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Colorimetric radiation dosimetry based on functional polymer and na...
- Patent number 9,170,337
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
Faceted semiconductor nanowire
- Patent number 9,159,834
- Issue date Oct 13, 2015
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Interface engineering to optimize metal-III-V contacts
- Patent number 9,105,571
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate structure formed with electroless metal deposition
- Patent number 9,099,327
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate self-aligned carbon nanostructure transistor
- Patent number 9,059,274
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Colorimetric radiation dosimetry based on functional polymer and na...
- Patent number 9,057,787
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Grant
Method to form silicide contact in trenches
- Patent number 9,059,096
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide micromechanical device and methods to fabricate same
- Patent number 8,993,907
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Michael A Guillorn
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method to control metal semiconductor micro-structure
- Patent number 8,987,135
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to form uniform and stable silicide
- Patent number 8,981,565
- Issue date Mar 17, 2015
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Janus complementary MEMS transistors and circuits
- Patent number 8,962,442
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate self-aligned carbon nanostructure transistor
- Patent number 8,962,408
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Qing Cao
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Multigate structure formed with electroless metal deposition
- Patent number 8,936,978
- Issue date Jan 20, 2015
- International Business Machines Corporation
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bottom plate for metal high-K dielectric metal insulat...
- Patent number 8,916,435
- Issue date Dec 23, 2014
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition on a nanowire using atomic layer deposition
- Patent number 8,900,935
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Dechao Guo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Implantless dopant segregation for silicide contacts
- Patent number 8,889,537
- Issue date Nov 18, 2014
- International Business Machines Corporation
- Cryil Cabral
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRIGATE DEVICE WITH FULL SILICIDED EPI-LESS SOURCE/DRAIN FOR HIGH D...
- Publication number 20190237538
- Publication date Aug 1, 2019
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY NANO-ARRAY FOR SENSING
- Publication number 20170284963
- Publication date Oct 5, 2017
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED CIRCUIT HAVING MIM CAPACITOR WITH REFRACTORY METAL SILIC...
- Publication number 20170154889
- Publication date Jun 1, 2017
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIGATE DEVICE WITH FULL SILICIDED EPI-LESS SOURCE/DRAIN FOR HIGH D...
- Publication number 20170062436
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE...
- Publication number 20160365473
- Publication date Dec 15, 2016
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE...
- Publication number 20160359073
- Publication date Dec 8, 2016
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY NANO-ARRAY FOR SENSING
- Publication number 20160349207
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
HIGH DENSITY NANO-ARRAY FOR SENSING
- Publication number 20160349208
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE...
- Publication number 20160126405
- Publication date May 5, 2016
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NA...
- Publication number 20150285920
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
JANUS COMPLEMENTARY MEMS TRANSISTORS AND CIRCUITS
- Publication number 20150014755
- Publication date Jan 15, 2015
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE SELF-ALIGNED CARBON NANOSTRUCTURE TRANSISTOR
- Publication number 20140353590
- Publication date Dec 4, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE SELF-ALIGNED CARBON NANOSTRUCTURE TRANSISTOR
- Publication number 20140353589
- Publication date Dec 4, 2014
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS
- Publication number 20140345687
- Publication date Nov 27, 2014
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Fabricating Janus Sensors
- Publication number 20140326613
- Publication date Nov 6, 2014
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
Techniques for Fabricating Janus Sensors
- Publication number 20140326047
- Publication date Nov 6, 2014
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NA...
- Publication number 20140312249
- Publication date Oct 23, 2014
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NA...
- Publication number 20140315316
- Publication date Oct 23, 2014
- International Business Machines Corporation
- Qing Cao
- G01 - MEASURING TESTING
Information Patent Application
Dual Silicide Process Compatible with Replacement-Metal-Gate
- Publication number 20140306291
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Silicide Process Compatible with Replacement-Metal-Gate
- Publication number 20140306290
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION
- Publication number 20140264482
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED SEMICONDUCTOR NANOWIRE
- Publication number 20140273360
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
FACETED SEMICONDUCTOR NANOWIRE
- Publication number 20140264279
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Dual Silicide Process
- Publication number 20140210011
- Publication date Jul 31, 2014
- GLOBALFOUNDRIES Inc.
- Ashish K. Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING CONTACT RESISTANCE BY DIRECT SELF-ASSEMBLING
- Publication number 20140203360
- Publication date Jul 24, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...
- Publication number 20140117498
- Publication date May 1, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...
- Publication number 20140120687
- Publication date May 1, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
- Publication number 20140054700
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
- Publication number 20140057399
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS
- Publication number 20140000712
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Trigate device with full silicided epi-less source/drain for high d...

High density nano-array for sensing

Solar cell with interdigitated back contacts formed from high and l...

Trigate device with full silicided epi-less source/drain for high d...

High density nano-array for sensing

Carbon-doped cap for a raised active semiconductor region

Integrated circuit having MIM capacitor with refractory metal silic...

High density nano-array for sensing

MIS-IL silicon solar cell with passivation layer to induce surface...

Deposition on a nanowire using atomic layer deposition

Colorimetric radiation dosimetry based on functional polymer and na...

Techniques for fabricating Janus sensors

Techniques for fabricating Janus sensors

Niobium thin film stress relieving layer for thin-film solar cells

Colorimetric radiation dosimetry based on functional polymer and na...

Faceted semiconductor nanowire

Interface engineering to optimize metal-III-V contacts

Multigate structure formed with electroless metal deposition

Replacement gate self-aligned carbon nanostructure transistor

Colorimetric radiation dosimetry based on functional polymer and na...

Method to form silicide contact in trenches

Silicide micromechanical device and methods to fabricate same

Method to control metal semiconductor micro-structure

Techniques to form uniform and stable silicide

Janus complementary MEMS transistors and circuits

Replacement gate self-aligned carbon nanostructure transistor

Multigate structure formed with electroless metal deposition

Self-aligned bottom plate for metal high-K dielectric metal insulat...

Deposition on a nanowire using atomic layer deposition

Implantless dopant segregation for silicide contacts

Patents Applicationslast 30 patents

TRIGATE DEVICE WITH FULL SILICIDED EPI-LESS SOURCE/DRAIN FOR HIGH D...

HIGH DENSITY NANO-ARRAY FOR SENSING

INTEGRATED CIRCUIT HAVING MIM CAPACITOR WITH REFRACTORY METAL SILIC...

TRIGATE DEVICE WITH FULL SILICIDED EPI-LESS SOURCE/DRAIN FOR HIGH D...

MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE...

MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE...

HIGH DENSITY NANO-ARRAY FOR SENSING

HIGH DENSITY NANO-ARRAY FOR SENSING

MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE...

COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NA...

JANUS COMPLEMENTARY MEMS TRANSISTORS AND CIRCUITS

REPLACEMENT GATE SELF-ALIGNED CARBON NANOSTRUCTURE TRANSISTOR

REPLACEMENT GATE SELF-ALIGNED CARBON NANOSTRUCTURE TRANSISTOR

NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS

Techniques for Fabricating Janus Sensors

Techniques for Fabricating Janus Sensors

COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NA...

COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NA...

Dual Silicide Process Compatible with Replacement-Metal-Gate

Dual Silicide Process Compatible with Replacement-Metal-Gate

CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION

FACETED SEMICONDUCTOR NANOWIRE

FACETED SEMICONDUCTOR NANOWIRE

Dual Silicide Process

REDUCING CONTACT RESISTANCE BY DIRECT SELF-ASSEMBLING

Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...

Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...

Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer

Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer

NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS