Zhengying Wei

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming doped epitaxial layer of contact image sensor
- Patent number 11,508,859
- Issue date Nov 22, 2022
- Shanghai Huali Microelectronics Corporation
- Chenchen Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving HDP filling defects through STI etching process
- Patent number 11,342,217
- Issue date May 24, 2022
- Shanghai Huali Microelectronics Corporation
- Zhengying Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for self aligned contact for integrated circuits
- Patent number 8,507,378
- Issue date Aug 13, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- ChiKang Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING IMAGE SENSOR
- Publication number 20250107251
- Publication date Mar 27, 2025
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Xing FANG
Information Patent Application
CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20240153980
- Publication date May 9, 2024
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Chenchen Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-LAYER STACKED CMOS IMAGE SENSOR
- Publication number 20240128296
- Publication date Apr 18, 2024
- Shanghai Huali Microelectronics Corporation
- Xing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Improving HDP Filling Defects through STI Etching Process
- Publication number 20220148909
- Publication date May 12, 2022
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Zhengying Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Doped Epitaxial Layer of Contact Image Sensor
- Publication number 20220069145
- Publication date Mar 3, 2022
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Chenchen Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR SELF ALIGNED CONTACT FOR INTEGRATED CIRCUITS
- Publication number 20110037130
- Publication date Feb 17, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- ChiKang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Shallow Trench Isolation Structure
- Publication number 20080081433
- Publication date Apr 3, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Leong Tce Koh
- H01 - BASIC ELECTRIC ELEMENTS

Zhengying Wei

Person

Patents Grantslast 30 patents

Method for forming doped epitaxial layer of contact image sensor

Method for improving HDP filling defects through STI etching process

Method and structure for self aligned contact for integrated circuits

Patents Applicationslast 30 patents

METHOD FOR MAKING IMAGE SENSOR

CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME

DOUBLE-LAYER STACKED CMOS IMAGE SENSOR

Method for Improving HDP Filling Defects through STI Etching Process

Method for Forming Doped Epitaxial Layer of Contact Image Sensor

METHOD AND STRUCTURE FOR SELF ALIGNED CONTACT FOR INTEGRATED CIRCUITS

Method for Forming a Shallow Trench Isolation Structure