Zhenyu Lu

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-tier memory device with through-stack peripheral contact via...
- Patent number 10,269,620
- Issue date Apr 23, 2019
- SanDisk Technologies LLC
- Jixin Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Through-memory-level via structures between staircase regions in a...
- Patent number 10,256,248
- Issue date Apr 9, 2019
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Within-array through-memory-level via structures and method of maki...
- Patent number 10,249,640
- Issue date Apr 2, 2019
- SanDisk Technologies LLC
- Jixin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a staircase in a semiconductor device using a lin...
- Patent number 9,985,046
- Issue date May 29, 2018
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices including vertically sh...
- Patent number 9,935,050
- Issue date Apr 3, 2018
- SanDisk Technologies LLC
- Mohan Dunga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned isolation dielectric structures for a three-dimensiona...
- Patent number 9,859,363
- Issue date Jan 2, 2018
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a multilevel memory stack structure using a cavity...
- Patent number 9,853,043
- Issue date Dec 26, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device containing cobalt silicide control gate electrodes an...
- Patent number 9,842,907
- Issue date Dec 12, 2017
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing annular etch-stop spacer...
- Patent number 9,780,034
- Issue date Oct 3, 2017
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating 3D NAND
- Patent number 9,779,948
- Issue date Oct 3, 2017
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier replacement memory stack structure integration scheme
- Patent number 9,728,551
- Issue date Aug 8, 2017
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming 3D memory cells after word line replacement
- Patent number 9,716,101
- Issue date Jul 25, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices containing memory block bridges
- Patent number 9,679,906
- Issue date Jun 13, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device with peripheral devices under dummy...
- Patent number 9,673,213
- Issue date Jun 6, 2017
- SanDisk Technologies LLC
- Jixin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device with epitaxial semiconductor pedest...
- Patent number 9,543,318
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a single layer channel and...
- Patent number 9,530,785
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing CMOS devices over memory...
- Patent number 9,530,790
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Zhenyu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi tier three-dimensional memory devices including vertically sh...
- Patent number 9,502,471
- Issue date Nov 22, 2016
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a vertical NAND device using a sacrificial layer w...
- Patent number 9,449,982
- Issue date Sep 20, 2016
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device with epitaxial semiconductor pedest...
- Patent number 9,449,987
- Issue date Sep 20, 2016
- SanDisk Technologies LLC
- Koji Miyata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A STAIRCASE IN A SEMICONDUCTOR DEVICE USING A LIN...
- Publication number 20170358594
- Publication date Dec 14, 2017
- SanDisk Technologies LLC
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WITHIN-ARRAY THROUGH-MEMORY-LEVEL VIA STRUCTURES AND METHOD OF MAKI...
- Publication number 20170358593
- Publication date Dec 14, 2017
- SanDisk Technologies LLC
- Jixin YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-MEMORY-LEVEL VIA STRUCTURES BETWEEN STAIRCASE REGIONS IN A...
- Publication number 20170352678
- Publication date Dec 7, 2017
- SanDisk Technologies LLC
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES INCLUDING VERTICALLY SH...
- Publication number 20170294377
- Publication date Oct 12, 2017
- SanDisk Technologies LLC
- Mohan DUNGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ETCH-STOP SPACER...
- Publication number 20170271261
- Publication date Sep 21, 2017
- SanDisk Technologies LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE CONTAINING DISCRETE SILICON NITRIDE...
- Publication number 20170243879
- Publication date Aug 24, 2017
- SANDISK TECHNOLOGIES INC.
- Jixin YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER MEMORY DEVICE WITH THROUGH-STACK PERIPHERAL CONTACT VIA...
- Publication number 20170236746
- Publication date Aug 17, 2017
- SanDisk Technologies LLC
- Jixin YU
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED ISOLATION DIELECTRIC STRUCTURES FOR A THREE-DIMENSIONA...
- Publication number 20170236896
- Publication date Aug 17, 2017
- SanDisk Technologies LLC
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER REPLACEMENT MEMORY STACK STRUCTURE INTEGRATION SCHEME
- Publication number 20170229472
- Publication date Aug 10, 2017
- SANDISK TECHNOLOGIES INC.
- Ching-Huang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COBALT SILICIDE CONTROL GATE ELECTRODES AN...
- Publication number 20170092733
- Publication date Mar 30, 2017
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A MULTILEVEL MEMORY STACK STRUCTURE USING A CAVITY...
- Publication number 20170062454
- Publication date Mar 2, 2017
- SANDISK TECHNOLOGIES INC.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES CONTAINING MEMORY BLOCK BRIDGES
- Publication number 20170047334
- Publication date Feb 16, 2017
- SANDISK TECHNOLOGIES INC.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Hole Last Boxim
- Publication number 20160343718
- Publication date Nov 24, 2016
- SANDISK TECHNOLOGIES INC.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A VERTICAL NAND DEVICE USING A SACRIFICIAL LAYER W...
- Publication number 20150294978
- Publication date Oct 15, 2015
- SanDisk Technologies, Inc.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Multi-tier memory device with through-stack peripheral contact via...

Through-memory-level via structures between staircase regions in a...

Within-array through-memory-level via structures and method of maki...

Method of forming a staircase in a semiconductor device using a lin...

Multi-tier three-dimensional memory devices including vertically sh...

Self-aligned isolation dielectric structures for a three-dimensiona...

Method of making a multilevel memory stack structure using a cavity...

Memory device containing cobalt silicide control gate electrodes an...

Three-dimensional memory device containing annular etch-stop spacer...

Method of fabricating 3D NAND

Multi-tier replacement memory stack structure integration scheme

Forming 3D memory cells after word line replacement

Three-dimensional memory devices containing memory block bridges

Three dimensional memory device with peripheral devices under dummy...

Three dimensional memory device with epitaxial semiconductor pedest...

Three-dimensional memory devices having a single layer channel and...

Three-dimensional memory device containing CMOS devices over memory...

Multi tier three-dimensional memory devices including vertically sh...

Method of making a vertical NAND device using a sacrificial layer w...

Three dimensional memory device with epitaxial semiconductor pedest...

Patents Applicationslast 30 patents

METHOD OF FORMING A STAIRCASE IN A SEMICONDUCTOR DEVICE USING A LIN...

WITHIN-ARRAY THROUGH-MEMORY-LEVEL VIA STRUCTURES AND METHOD OF MAKI...

THROUGH-MEMORY-LEVEL VIA STRUCTURES BETWEEN STAIRCASE REGIONS IN A...

MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES INCLUDING VERTICALLY SH...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ETCH-STOP SPACER...

THREE DIMENSIONAL MEMORY DEVICE CONTAINING DISCRETE SILICON NITRIDE...

MULTI-TIER MEMORY DEVICE WITH THROUGH-STACK PERIPHERAL CONTACT VIA...

SELF-ALIGNED ISOLATION DIELECTRIC STRUCTURES FOR A THREE-DIMENSIONA...

MULTI-TIER REPLACEMENT MEMORY STACK STRUCTURE INTEGRATION SCHEME

MEMORY DEVICE CONTAINING COBALT SILICIDE CONTROL GATE ELECTRODES AN...

METHOD OF MAKING A MULTILEVEL MEMORY STACK STRUCTURE USING A CAVITY...

THREE-DIMENSIONAL MEMORY DEVICES CONTAINING MEMORY BLOCK BRIDGES

Memory Hole Last Boxim

METHOD OF MAKING A VERTICAL NAND DEVICE USING A SACRIFICIAL LAYER W...