Zhihong Zhang

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
LDMOS with an improved breakdown performance
- Patent number 11,610,978
- Issue date Mar 21, 2023
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for extension of operation voltage
- Patent number 11,404,539
- Issue date Aug 2, 2022
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with diode coupled isolation ring
- Patent number 11,127,856
- Issue date Sep 21, 2021
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation and substrate connection on SOI
- Patent number 11,127,622
- Issue date Sep 21, 2021
- NXP USA, INC.
- James Gordon Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench and junction hybrid isolation
- Patent number 10,944,001
- Issue date Mar 9, 2021
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,217,860
- Issue date Feb 26, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,186,612
- Issue date Jan 22, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial, self-biased isolation in semiconductor devices
- Patent number 9,825,169
- Issue date Nov 21, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 9,728,600
- Issue date Aug 8, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with enhanced 3D resurf
- Patent number 9,691,880
- Issue date Jun 27, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-adjusted isolation bias in semiconductor devices
- Patent number 9,680,011
- Issue date Jun 13, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite drift region and related fabric...
- Patent number 9,666,671
- Issue date May 30, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliability in mergeable semiconductor devices
- Patent number 9,640,635
- Issue date May 2, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate semiconductor devices with improved hot-carrier injectio...
- Patent number 9,614,041
- Issue date Apr 4, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation
- Patent number 9,601,564
- Issue date Mar 21, 2017
- NXP USA, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related fabrication methods
- Patent number 9,590,097
- Issue date Mar 7, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with peripheral breakdown protection
- Patent number 9,543,379
- Issue date Jan 10, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with enhanced 3D resurf
- Patent number 9,490,322
- Issue date Nov 8, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resurf semiconductor device charge balancing
- Patent number 9,466,712
- Issue date Oct 11, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Won Gi Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown voltage
- Patent number 9,385,229
- Issue date Jul 5, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation
- Patent number 9,343,526
- Issue date May 17, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die edge sealing structures and related fabrication methods
- Patent number 9,331,025
- Issue date May 3, 2016
- Freescale Semiconductors Inc.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related fabrication methods
- Patent number 9,306,060
- Issue date Apr 5, 2016
- Freescale Semiconductor Inc.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor device with multiple threshold voltages
- Patent number 9,165,918
- Issue date Oct 20, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain-end drift diminution in semiconductor devices
- Patent number 9,136,323
- Issue date Sep 15, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chip identification pattern and method of forming
- Patent number 9,136,222
- Issue date Sep 15, 2015
- GLOBALFOUNDRIES, INC.
- Yoba Amoah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mergeable semiconductor device with improved reliability
- Patent number 9,117,841
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related fabrication methods
- Patent number 9,070,576
- Issue date Jun 30, 2015
- Freescale Semiconductor Inc.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RESURF semiconductor device charge balancing
- Patent number 9,041,103
- Issue date May 26, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Won Gi Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die edge sealing structures and related fabrication methods
- Patent number 8,896,102
- Issue date Nov 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS With An Improved Breakdown Performance
- Publication number 20220293771
- Publication date Sep 15, 2022
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for Extension of Operation Voltage
- Publication number 20220069077
- Publication date Mar 3, 2022
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Trench Isolation And Substrate Connection on SOI
- Publication number 20210217655
- Publication date Jul 15, 2021
- NXP USA, Inc.
- James Gordon Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH DIODE COUPLED ISOLATION RING
- Publication number 20200328304
- Publication date Oct 15, 2020
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL, SELF-BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170179279
- Publication date Jun 22, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES
- Publication number 20170125584
- Publication date May 4, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077295
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077219
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE SEMICONDUCTOR DEVICES WITH IMPROVED HOT-CARRIER INJECTIO...
- Publication number 20170077233
- Publication date Mar 16, 2017
- Freescale Semiconductor Inc.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF
- Publication number 20170053999
- Publication date Feb 23, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION
- Publication number 20160233296
- Publication date Aug 11, 2016
- FREESCALE SEMICONDUCTOR, INC.
- XU CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS
- Publication number 20160181421
- Publication date Jun 23, 2016
- Freescale Semiconductor Inc.
- HONGNING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20160087096
- Publication date Mar 24, 2016
- HONGNING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES
- Publication number 20150364576
- Publication date Dec 17, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE DRIFT REGION AND RELATED FABRIC...
- Publication number 20150333177
- Publication date Nov 19, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Semiconductor Device with Multiple Threshold Voltages
- Publication number 20150325565
- Publication date Nov 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Peripheral Breakdown Protection
- Publication number 20150270333
- Publication date Sep 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESURF SEMICONDUCTOR DEVICE CHARGE BALANCING
- Publication number 20150243781
- Publication date Aug 27, 2015
- FREESCALE SEMICONDUCTOR, INC.
- WON GI MIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mergeable Semiconductor Device with Improved Reliability
- Publication number 20150097238
- Publication date Apr 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS
- Publication number 20150056751
- Publication date Feb 26, 2015
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES
- Publication number 20150004768
- Publication date Jan 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION
- Publication number 20140264724
- Publication date Sep 18, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY BITCELL
- Publication number 20140209988
- Publication date Jul 31, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS
- Publication number 20140203410
- Publication date Jul 24, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF
- Publication number 20140203358
- Publication date Jul 24, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20140070311
- Publication date Mar 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND METHOD FOR IMPROVED SOA
- Publication number 20140027849
- Publication date Jan 30, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP IDENTIFICATION PATTERN AND METHOD OF FORMING
- Publication number 20130299939
- Publication date Nov 14, 2013
- International Business Machines Corporation
- Yoba Amoah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Drain-End Drift Diminution
- Publication number 20130292764
- Publication date Nov 7, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM CAPACITOR FORMATION METHOD AND STRUCTURE
- Publication number 20130285201
- Publication date Oct 31, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Zhihong Zhang

Person

Patents Grantslast 30 patents

LDMOS with an improved breakdown performance

Apparatus for extension of operation voltage

LDMOS with diode coupled isolation ring

Deep trench isolation and substrate connection on SOI

Deep trench and junction hybrid isolation

Partially biased isolation in semiconductor devices

Partially biased isolation in semiconductor devices

Partial, self-biased isolation in semiconductor devices

Partially biased isolation in semiconductor devices

Semiconductor device with enhanced 3D resurf

Self-adjusted isolation bias in semiconductor devices

Semiconductor device with composite drift region and related fabric...

Reliability in mergeable semiconductor devices

Multi-gate semiconductor devices with improved hot-carrier injectio...

Deep trench isolation

Semiconductor devices and related fabrication methods

Semiconductor device with peripheral breakdown protection

Semiconductor device with enhanced 3D resurf

Resurf semiconductor device charge balancing

Semiconductor device with improved breakdown voltage

Deep trench isolation

Die edge sealing structures and related fabrication methods

Semiconductor devices and related fabrication methods

Composite semiconductor device with multiple threshold voltages

Drain-end drift diminution in semiconductor devices

Chip identification pattern and method of forming

Mergeable semiconductor device with improved reliability

Semiconductor device and related fabrication methods

RESURF semiconductor device charge balancing

Die edge sealing structures and related fabrication methods

Patents Applicationslast 30 patents

LDMOS With An Improved Breakdown Performance

Apparatus for Extension of Operation Voltage

Deep Trench Isolation And Substrate Connection on SOI

LDMOS WITH DIODE COUPLED ISOLATION RING

PARTIAL, SELF-BIASED ISOLATION IN SEMICONDUCTOR DEVICES

SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

MULTI-GATE SEMICONDUCTOR DEVICES WITH IMPROVED HOT-CARRIER INJECTIO...

SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF

DEEP TRENCH ISOLATION

SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH COMPOSITE DRIFT REGION AND RELATED FABRIC...

Composite Semiconductor Device with Multiple Threshold Voltages

Semiconductor Device with Peripheral Breakdown Protection

RESURF SEMICONDUCTOR DEVICE CHARGE BALANCING

Mergeable Semiconductor Device with Improved Reliability

DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS

DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES

DEEP TRENCH ISOLATION

NONVOLATILE MEMORY BITCELL

DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS

SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

LDMOS DEVICE AND METHOD FOR IMPROVED SOA

CHIP IDENTIFICATION PATTERN AND METHOD OF FORMING

Semiconductor Device with Drain-End Drift Diminution

MIM CAPACITOR FORMATION METHOD AND STRUCTURE