Zhitang Song

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Electrostatic discharge (ESD) protection circuits
- Patent number 11,824,347
- Issue date Nov 21, 2023
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-out circuit and read-out method for three-dimensional memory
- Patent number 11,568,931
- Issue date Jan 31, 2023
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Yu Lei
- G11 - INFORMATION STORAGE
Information Patent Grant
Read circuit of storage class memory with a read reference circuit,...
- Patent number 10,679,697
- Issue date Jun 9, 2020
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Yu Lei
- G11 - INFORMATION STORAGE
Information Patent Grant
Film-forming silica sol, method of preparing the same, and applicat...
- Patent number 10,604,662
- Issue date Mar 31, 2020
- SHANGHAI XINANNA ELECTRONIC TECHNOLOGY CO., LTD
- Yongxia Wang
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Storage array, and storage chip and method for storing logical rela...
- Patent number 10,482,955
- Issue date Nov 19, 2019
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Sannian Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change material for phase change memory and preparation metho...
- Patent number 10,411,187
- Issue date Sep 10, 2019
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Feng Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change me...
- Patent number 10,276,234
- Issue date Apr 30, 2019
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Liangcai Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change storage unit for replacing DRAM and FLASH and manufact...
- Patent number 9,362,493
- Issue date Jun 7, 2016
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Feng Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing auto-doping during epitaxial layer growth by c...
- Patent number 9,334,583
- Issue date May 10, 2016
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Chao Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Phase-change storage unit containing TiSiN material layer and metho...
- Patent number 9,276,202
- Issue date Mar 1, 2016
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Zhitang Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data readout circuit of phase change memory
- Patent number 8,947,924
- Issue date Feb 3, 2015
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Xi Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Al-Sb-Te phase change material used for phase change memory and fab...
- Patent number 8,920,684
- Issue date Dec 30, 2014
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Cheng Peng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Phase change memory structure having low-K dielectric heat-insulati...
- Patent number 8,722,455
- Issue date May 13, 2014
- Chinese Academy of Sciences
- Zhitang Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 8,586,405
- Issue date Nov 19, 2013
- Semiconductor Manufacturing International (Beijing) Corporation
- Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating dual trench isolated epitaxial diode array
- Patent number 8,476,085
- Issue date Jul 2, 2013
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trimming semiconductor elements with electrical resistanc...
- Patent number 7,790,518
- Issue date Sep 7, 2010
- Silicon Storage Technology, Inc.
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trimming semiconductor elements with electrical resistanc...
- Patent number 7,351,613
- Issue date Apr 1, 2008
- Silicon Storage Technology, Inc.
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Electrostatic Discharge (ESD) Protection Circuits
- Publication number 20240047964
- Publication date Feb 8, 2024
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR MATERIAL, SELECTOR UNIT AND PREPARATION METHOD THEREOF, AN...
- Publication number 20230276638
- Publication date Aug 31, 2023
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Min ZHU
Information Patent Application
Memory Device
- Publication number 20230044721
- Publication date Feb 9, 2023
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic Discharge (ESD) Protection Circuits
- Publication number 20220337052
- Publication date Oct 20, 2022
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Guobiao ZHANG
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY CELL AND PREPARATION MET...
- Publication number 20220328761
- Publication date Oct 13, 2022
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Sannian SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY AND METHOD FOR MAKING THE SAME
- Publication number 20220231224
- Publication date Jul 21, 2022
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- ZHITANG SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ-OUT CIRCUIT AND READ-OUT METHOD FOR THREE-DIMENSIONAL MEMORY
- Publication number 20200126615
- Publication date Apr 23, 2020
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- YU LEI
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE ARRAY, AND STORAGE CHIP AND METHOD FOR STORING LOGICAL RELA...
- Publication number 20180322919
- Publication date Nov 8, 2018
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- SANNIAN SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PAHSE CHANG MATERIAL FOR PHASE CHANG MEMORY AND PREPARATION METHOD...
- Publication number 20180315921
- Publication date Nov 1, 2018
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- FENG RAO
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY UNIT AND PREPARATION METHOD THEREFOR
- Publication number 20180269388
- Publication date Sep 20, 2018
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- ZHITANG SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ CIRCUIT OF STORAGE CLASS MEMORY
- Publication number 20180190351
- Publication date Jul 5, 2018
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- YU LEI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PREPARING AN ALUMINUM OXIDE POLISHING SOLUTION
- Publication number 20170362463
- Publication date Dec 21, 2017
- Shanghai Xinanna Electronic Technology Co., LTD
- Weilei Wang
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
POLYDISPERSE LARGE-PARTICLE-SIZE SILICA SOL AND METHOD OF PREPARING...
- Publication number 20170349788
- Publication date Dec 7, 2017
- Shanghai Xinanna Electronic Technology Co., LTD
- Hui Kong
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
FILM-FORMING SILICA SOL, METHOD OF PREPARING THE SAME, AND APPLICAT...
- Publication number 20170233589
- Publication date Aug 17, 2017
- Shanghai Xinanna Electronic Technology Co., LTD
- Yongxia Wang
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE ME...
- Publication number 20160099050
- Publication date Apr 7, 2016
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Liangcai WU
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-Change Storage Unit Containing TiSiN Material Layer and Metho...
- Publication number 20150221863
- Publication date Aug 6, 2015
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY
- Zhitang Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Antimony-Rich High-speed Phase-change Material Used In Phase-Change...
- Publication number 20150207070
- Publication date Jul 23, 2015
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY
- Zhitang Song
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Phase-Change Storage Unit For Replacing DRAM And FLASH And Manufact...
- Publication number 20150188041
- Publication date Jul 2, 2015
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Feng Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-speed, High-density, and Low-power consumption Phase-change Me...
- Publication number 20140291597
- Publication date Oct 2, 2014
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY
- Zhitang Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE ME...
- Publication number 20140192592
- Publication date Jul 10, 2014
- Shanghai Institute of Microsystem and Information Technology Chinese Academy
- Liangcai Wu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DATA READOUT CIRCUIT OF PHASE CHANGE MEMORY
- Publication number 20140078820
- Publication date Mar 20, 2014
- Xi Li
- G11 - INFORMATION STORAGE
Information Patent Application
CHEMICAL MECHANICAL POLISHING SLURRY
- Publication number 20140008567
- Publication date Jan 9, 2014
- Liangyong Wang
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FAB...
- Publication number 20130334469
- Publication date Dec 19, 2013
- Cheng Peng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PHASE CHANGE MEMORY CELL AND FABRICATION METHOD THEREOF
- Publication number 20130292629
- Publication date Nov 7, 2013
- Bo Liu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FABRICATING DUAL TRENCH ISOLATED EPITAXIAL DIODE ARRAY
- Publication number 20130189799
- Publication date Jul 25, 2013
- Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY STRUCTURE HAVING LOW-K DIELECTRIC HEAT-INSULATI...
- Publication number 20130175493
- Publication date Jul 11, 2013
- Zhitang Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF EPITAXIAL GROWTH EFFECTIVELY PREVENTING AUTO-DOPING EFFECT
- Publication number 20130145984
- Publication date Jun 13, 2013
- Chao Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20130134381
- Publication date May 30, 2013
- Semiconductor Manufacturing International (Beijing) Corporation
- CHAO ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Trimming Semiconductor Elements With Electrical Resistanc...
- Publication number 20080131982
- Publication date Jun 5, 2008
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of trimming semiconductor elements with electrical resistanc...
- Publication number 20060094197
- Publication date May 4, 2006
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS

Zhitang Song

Person

Patents Grantslast 30 patents

Electrostatic discharge (ESD) protection circuits

Read-out circuit and read-out method for three-dimensional memory

Read circuit of storage class memory with a read reference circuit,...

Film-forming silica sol, method of preparing the same, and applicat...

Storage array, and storage chip and method for storing logical rela...

Phase change material for phase change memory and preparation metho...

Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change me...

Phase-change storage unit for replacing DRAM and FLASH and manufact...

Method of preventing auto-doping during epitaxial layer growth by c...

Phase-change storage unit containing TiSiN material layer and metho...

Data readout circuit of phase change memory

Al-Sb-Te phase change material used for phase change memory and fab...

Phase change memory structure having low-K dielectric heat-insulati...

Semiconductor device manufacturing method

Method of fabricating dual trench isolated epitaxial diode array

Method of trimming semiconductor elements with electrical resistanc...

Method of trimming semiconductor elements with electrical resistanc...

Patents Applicationslast 30 patents

Electrostatic Discharge (ESD) Protection Circuits

SELECTOR MATERIAL, SELECTOR UNIT AND PREPARATION METHOD THEREOF, AN...

Memory Device

Electrostatic Discharge (ESD) Protection Circuits

PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY CELL AND PREPARATION MET...

PHASE CHANGE MEMORY AND METHOD FOR MAKING THE SAME

READ-OUT CIRCUIT AND READ-OUT METHOD FOR THREE-DIMENSIONAL MEMORY

STORAGE ARRAY, AND STORAGE CHIP AND METHOD FOR STORING LOGICAL RELA...

PAHSE CHANG MATERIAL FOR PHASE CHANG MEMORY AND PREPARATION METHOD...

PHASE CHANGE MEMORY UNIT AND PREPARATION METHOD THEREFOR

READ CIRCUIT OF STORAGE CLASS MEMORY

METHOD FOR PREPARING AN ALUMINUM OXIDE POLISHING SOLUTION

POLYDISPERSE LARGE-PARTICLE-SIZE SILICA SOL AND METHOD OF PREPARING...

FILM-FORMING SILICA SOL, METHOD OF PREPARING THE SAME, AND APPLICAT...

SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE ME...

Phase-Change Storage Unit Containing TiSiN Material Layer and Metho...

Antimony-Rich High-speed Phase-change Material Used In Phase-Change...

Phase-Change Storage Unit For Replacing DRAM And FLASH And Manufact...

High-speed, High-density, and Low-power consumption Phase-change Me...

SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE ME...

DATA READOUT CIRCUIT OF PHASE CHANGE MEMORY

CHEMICAL MECHANICAL POLISHING SLURRY

AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FAB...

PHASE CHANGE MEMORY CELL AND FABRICATION METHOD THEREOF

METHOD OF FABRICATING DUAL TRENCH ISOLATED EPITAXIAL DIODE ARRAY

PHASE CHANGE MEMORY STRUCTURE HAVING LOW-K DIELECTRIC HEAT-INSULATI...

METHOD OF EPITAXIAL GROWTH EFFECTIVELY PREVENTING AUTO-DOPING EFFECT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method Of Trimming Semiconductor Elements With Electrical Resistanc...

Method of trimming semiconductor elements with electrical resistanc...