Zhiwei Zhu

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Asymmetrical gate MOS device and method of making
- Patent number 9,209,029
- Issue date Dec 8, 2015
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky junction source/drain transistor and method of making
- Patent number 8,697,529
- Issue date Apr 15, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Asymmetrical Gate MOS Device and Method of Making
- Publication number 20140048875
- Publication date Feb 20, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nano-MOS Devices and Method of Making
- Publication number 20140034955
- Publication date Feb 6, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Gate MOS Device and Method of Making
- Publication number 20140034956
- Publication date Feb 6, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal/Semiconductor Compound Thin Film and a DRAM Storage Cell and...
- Publication number 20140008710
- Publication date Jan 9, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super-Long Semiconductor Nano-Wire Structure and Method of Making
- Publication number 20140008604
- Publication date Jan 9, 2014
- Fudan University
- Dongping Wu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Making Metal/Semiconductor Compound Thin Film
- Publication number 20140011355
- Publication date Jan 9, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING FIELD EFFECT TRANSISTOR
- Publication number 20130295732
- Publication date Nov 7, 2013
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING TRANSISTORS
- Publication number 20130270615
- Publication date Oct 17, 2013
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Asymmetrical gate MOS device and method of making

Schottky junction source/drain transistor and method of making

Patents Applicationslast 30 patents

Asymmetrical Gate MOS Device and Method of Making

Nano-MOS Devices and Method of Making

Asymmetric Gate MOS Device and Method of Making

Metal/Semiconductor Compound Thin Film and a DRAM Storage Cell and...

Super-Long Semiconductor Nano-Wire Structure and Method of Making

Method of Making Metal/Semiconductor Compound Thin Film

METHOD FOR MAKING FIELD EFFECT TRANSISTOR

METHOD FOR MAKING TRANSISTORS