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Zhiyun LUO
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San Jose, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Edge termination designs for semiconductor power devices
Patent number
11,101,346
Issue date
Aug 24, 2021
HUNTECH SEMICONDUCTOR (SHANGHAI) CO. LTD
Jun Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
SGT MOSFET with adjustable CRSS and CISS
Patent number
10,923,588
Issue date
Feb 16, 2021
HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
Jun Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structures and methods of fabricating dual gate devices
Patent number
10,453,953
Issue date
Oct 22, 2019
Vishay-Siliconix
Kyle Terrill
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
SGT MOSFET with adjustable CRSS and CISS
Patent number
10,038,089
Issue date
Jul 31, 2018
HUNTECK SEMICONDUCTOR (SHANGHAI) CO., Ltd
Jun Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structures and methods of fabricating dual gate devices
Patent number
9,577,089
Issue date
Feb 21, 2017
Vishay Siliconix
Kyle Terrill
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
EDGE TERMINATION DESIGNS FOR SEMICONDUCTOR POWER DEVICES
Publication number
20190206986
Publication date
Jul 4, 2019
Jun Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
Publication number
20190027596
Publication date
Jan 24, 2019
Hunteck Semiconductor (Shanghai) Co.,Ltd.
Jun HU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
Publication number
20170162689
Publication date
Jun 8, 2017
Jun Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES
Publication number
20170104096
Publication date
Apr 13, 2017
VISHAY-SILICONIX
Kyle Terrill
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES
Publication number
20110254084
Publication date
Oct 20, 2011
VISHAY-SILICONIX
Kyle Terrill
H01 - BASIC ELECTRIC ELEMENTS