Zoran Krivokapic

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fin-FET resonant body transistor
- Patent number 10,002,859
- Issue date Jun 19, 2018
- GLOBALFOUNDRIES Inc.
- Bichoy Bahr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to utilize piezoelectric materials as gate dielectric in hi...
- Patent number 9,997,695
- Issue date Jun 12, 2018
- GLOBALFOUNDRIES Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-FET resonant body transistor
- Patent number 9,899,363
- Issue date Feb 20, 2018
- GLOBALFOUNDRIES Inc.
- Bichoy Bahr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V NFETs including channel barrier layers to reduce band-to-band...
- Patent number 9,685,529
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Deepak Nayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to utilize piezoelectric materials as gate dielectric in hi...
- Patent number 9,673,376
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MEMs-based resonant FinFET
- Patent number 9,663,346
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Bichoy Bahr
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
FinFET device with a graphene gate electrode and methods of forming...
- Patent number 8,815,739
- Issue date Aug 26, 2014
- GLOBALFOUNDRIES Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for memory devices with asymmetric switching ch...
- Patent number 8,681,570
- Issue date Mar 25, 2014
- GLOBALFOUNDRIES, INC.
- An Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array memory elements and related read methods
- Patent number 8,605,481
- Issue date Dec 10, 2013
- GLOBALFOUNDRIES, INC.
- An Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,580,660
- Issue date Nov 12, 2013
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fully depleted silicon on insulator semiconductor device
- Patent number 8,502,283
- Issue date Aug 6, 2013
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming finned semiconductor devices with trench isolation
- Patent number 8,431,466
- Issue date Apr 30, 2013
- Advanced Micro Devices, Inc.
- Ming-ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried silicide local interconnect with sidewall spacers and method...
- Patent number 8,368,219
- Issue date Feb 5, 2013
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 8,334,181
- Issue date Dec 18, 2012
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Signal control elements in ferromagnetic logic
- Patent number 8,331,135
- Issue date Dec 11, 2012
- GLOBALFOUNDRIES Inc.
- An Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Sidewall graphene devices for 3-D electronics
- Patent number 8,304,760
- Issue date Nov 6, 2012
- Advanced Micro Devices, Inc.
- An Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,222,680
- Issue date Jul 17, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile CMOS-compatible logic circuits and related operating me...
- Patent number 8,207,757
- Issue date Jun 26, 2012
- GLOBALFOUNDRIES, INC.
- An Chen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
P-channel germanium on insulator (GOI) one transistor memory cell
- Patent number 8,102,000
- Issue date Jan 24, 2012
- GLOBALFOUNDRIES Inc.
- Zoran Krivokapic
- G11 - INFORMATION STORAGE
Information Patent Grant
Buried silicide local interconnect with sidewall spacers and method...
- Patent number 8,049,334
- Issue date Nov 1, 2011
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming finned semiconductor devices with trench isolation
- Patent number 7,994,020
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Ming-ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall graphene devices for 3-D electronics
- Patent number 7,993,986
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- An Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for forming a one-transistor memory cell and related structure
- Patent number 7,973,364
- Issue date Jul 5, 2011
- GLOBALFOUNDRIES Inc.
- Zoran Krivokapic
- G11 - INFORMATION STORAGE
Information Patent Grant
Process of patterning small scale devices
- Patent number 7,939,247
- Issue date May 10, 2011
- GLOBALFOUNDRIES Inc.
- An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming fin structures using a sacrificial etch stop laye...
- Patent number 7,871,873
- Issue date Jan 18, 2011
- Global Foundries Inc.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and process of forming device with pre-patterned trench and...
- Patent number 7,858,990
- Issue date Dec 28, 2010
- Advanced Micro Devices, Inc.
- An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and process of forming device with device structure formed i...
- Patent number 7,858,989
- Issue date Dec 28, 2010
- GLOBALFOUNDRIES Inc.
- An Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Negative differential resistance diode and SRAM utilizing such device
- Patent number 7,816,767
- Issue date Oct 19, 2010
- Advanced Micro Devices, Inc.
- Gen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried silicide local interconnect with sidewall spacers and method...
- Patent number 7,786,003
- Issue date Aug 31, 2010
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 7,781,810
- Issue date Aug 24, 2010
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS TO UTILIZE PIEZOELECTRIC MATERIALS AS GATE DIELECTRIC IN HI...
- Publication number 20170222126
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Zoran KRIVOKAPIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC CHANNEL GROWTH OF A CLADDING LAYER OVER FINS OF A FIELD...
- Publication number 20150162435
- Publication date Jun 11, 2015
- GLOBALFOUNDRIES INC.
- Bhagawan Sahu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH A GRAPHENE GATE ELECTRODE AND METHODS OF FORMING...
- Publication number 20140312434
- Publication date Oct 23, 2014
- GLOBALFOUNDRIES INC.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GRAPHENE LINERS AND/OR CAP LAYERS ON COPPER-BASE...
- Publication number 20140145332
- Publication date May 29, 2014
- GLOBALFOUNDRIES INC.
- Errol T. Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH A GRAPHENE GATE ELECTRODE AND METHODS OF FORMING...
- Publication number 20140015015
- Publication date Jan 16, 2014
- GLOBALFOUNDRIES INC.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS FOR MEMORY DEVICES WITH ASYMMETRIC SWITCHING C...
- Publication number 20130223162
- Publication date Aug 29, 2013
- GLOBALFOUNDRIES INC.
- An Chen
- G11 - INFORMATION STORAGE
Information Patent Application
DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME
- Publication number 20120252193
- Publication date Oct 4, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSBAR ARRAY MEMORY ELEMENTS AND RELATED READ METHODS
- Publication number 20120081944
- Publication date Apr 5, 2012
- GLOBALFOUNDRIES INC.
- An CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
BURIED SILICIDE LOCAL INTERCONNECT WITH SIDEWALL SPACERS AND METHOD...
- Publication number 20120038051
- Publication date Feb 16, 2012
- SPANSION LLC
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION
- Publication number 20110263094
- Publication date Oct 27, 2011
- Advanced Micro Devices, Inc.
- Ming-ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL GRAPHENE DEVICES FOR 3-D ELECTRONICS
- Publication number 20110253983
- Publication date Oct 20, 2011
- Advanced Micro Devices, Inc.
- An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGNAL CONTROL ELEMENTS IN FERROMAGNETIC LOGIC
- Publication number 20110147709
- Publication date Jun 23, 2011
- GLOBALFOUNDRIES INC.
- An Chen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD OF FORMING FIN STRUCTURES USING A SACRIFICIAL ETCH STOP LAYE...
- Publication number 20100248454
- Publication date Sep 30, 2010
- Advanced Micro Devices, Inc.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND PROCESS OF FORMING DEVICE WITH PRE-PATTERNED TRENCH AND...
- Publication number 20100051960
- Publication date Mar 4, 2010
- Advanced Micro Devices, Inc.
- An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND PROCESS OF FORMING DEVICE WITH DEVICE STRUCTURE FORMED I...
- Publication number 20100051897
- Publication date Mar 4, 2010
- Advanced Micro Devices, Inc.
- An Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
PROCESS OF PATTERNING SMALL SCALE DEVICES
- Publication number 20100055577
- Publication date Mar 4, 2010
- Advanced Micro Devices, Inc.
- An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL GRAPHENE DEVICES FOR 3-D ELECTRONICS
- Publication number 20100055388
- Publication date Mar 4, 2010
- Advanced Micro Devices, Inc.
- An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION
- Publication number 20100015778
- Publication date Jan 21, 2010
- Advanced Micro Devices, Inc.
- Ming-ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Channel germanium on insulator (GOI) one transistor memory cell
- Publication number 20090256206
- Publication date Oct 15, 2009
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- G11 - INFORMATION STORAGE
Information Patent Application
Method for forming a one-transistor memory cell and related structure
- Publication number 20090212363
- Publication date Aug 27, 2009
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE DIFFERENTIAL RESISTANCE DIODE AND SRAM UTILIZING SUCH DEVICE
- Publication number 20090146212
- Publication date Jun 11, 2009
- Advanced Micro Devices, Inc.
- Gen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRAINING IN A SEMICONDUCTOR DEVICE
- Publication number 20080293195
- Publication date Nov 27, 2008
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MULTIPLE FINGER TRANSISTORS
- Publication number 20080090360
- Publication date Apr 17, 2008
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual charge storage node with undercut gate oxide for deep sub-micr...
- Publication number 20080061359
- Publication date Mar 13, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FULLY DEPLETED SILICON ON INSULATOR SEMICONDUCTOR DEVICE
- Publication number 20080054316
- Publication date Mar 6, 2008
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained fully depleted silicon on insulator semiconductor device a...
- Publication number 20060099752
- Publication date May 11, 2006
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self aligned damascene gate
- Publication number 20050104091
- Publication date May 19, 2005
- Cyrus E. Tabery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation (STI) region with high-K liner and method...
- Publication number 20050073022
- Publication date Apr 7, 2005
- Olov B. Karlsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device having a U-shaped ga...
- Publication number 20050006666
- Publication date Jan 13, 2005
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacture
- Publication number 20050003593
- Publication date Jan 6, 2005
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS

Zoran Krivokapic

Person

Patents Grantslast 30 patents

Fin-FET resonant body transistor

Methods to utilize piezoelectric materials as gate dielectric in hi...

Fin-FET resonant body transistor

III-V NFETs including channel barrier layers to reduce band-to-band...

Methods to utilize piezoelectric materials as gate dielectric in hi...

MEMs-based resonant FinFET

FinFET device with a graphene gate electrode and methods of forming...

Methods and systems for memory devices with asymmetric switching ch...

Crossbar array memory elements and related read methods

Double and triple gate MOSFET devices and methods for making same

Strained fully depleted silicon on insulator semiconductor device

Method of forming finned semiconductor devices with trench isolation

Buried silicide local interconnect with sidewall spacers and method...

Germanium MOSFET devices and methods for making same

Signal control elements in ferromagnetic logic

Sidewall graphene devices for 3-D electronics

Double and triple gate MOSFET devices and methods for making same

Nonvolatile CMOS-compatible logic circuits and related operating me...

P-channel germanium on insulator (GOI) one transistor memory cell

Buried silicide local interconnect with sidewall spacers and method...

Method of forming finned semiconductor devices with trench isolation

Sidewall graphene devices for 3-D electronics

Method for forming a one-transistor memory cell and related structure

Process of patterning small scale devices

Method of forming fin structures using a sacrificial etch stop laye...

Device and process of forming device with pre-patterned trench and...

Device and process of forming device with device structure formed i...

Negative differential resistance diode and SRAM utilizing such device

Buried silicide local interconnect with sidewall spacers and method...

Germanium MOSFET devices and methods for making same

Patents Applicationslast 30 patents

METHODS TO UTILIZE PIEZOELECTRIC MATERIALS AS GATE DIELECTRIC IN HI...

ASYMMETRIC CHANNEL GROWTH OF A CLADDING LAYER OVER FINS OF A FIELD...

FINFET DEVICE WITH A GRAPHENE GATE ELECTRODE AND METHODS OF FORMING...

METHODS OF FORMING GRAPHENE LINERS AND/OR CAP LAYERS ON COPPER-BASE...

FINFET DEVICE WITH A GRAPHENE GATE ELECTRODE AND METHODS OF FORMING...

METHODS AND SYSTEMS FOR MEMORY DEVICES WITH ASYMMETRIC SWITCHING C...

DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME

CROSSBAR ARRAY MEMORY ELEMENTS AND RELATED READ METHODS

BURIED SILICIDE LOCAL INTERCONNECT WITH SIDEWALL SPACERS AND METHOD...

METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION

SIDEWALL GRAPHENE DEVICES FOR 3-D ELECTRONICS

SIGNAL CONTROL ELEMENTS IN FERROMAGNETIC LOGIC

METHOD OF FORMING FIN STRUCTURES USING A SACRIFICIAL ETCH STOP LAYE...

DEVICE AND PROCESS OF FORMING DEVICE WITH PRE-PATTERNED TRENCH AND...

DEVICE AND PROCESS OF FORMING DEVICE WITH DEVICE STRUCTURE FORMED I...

PROCESS OF PATTERNING SMALL SCALE DEVICES

SIDEWALL GRAPHENE DEVICES FOR 3-D ELECTRONICS

METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION

P-Channel germanium on insulator (GOI) one transistor memory cell

Method for forming a one-transistor memory cell and related structure

NEGATIVE DIFFERENTIAL RESISTANCE DIODE AND SRAM UTILIZING SUCH DEVICE

GATE STRAINING IN A SEMICONDUCTOR DEVICE

METHODS FOR FABRICATING MULTIPLE FINGER TRANSISTORS

Dual charge storage node with undercut gate oxide for deep sub-micr...

STRAINED FULLY DEPLETED SILICON ON INSULATOR SEMICONDUCTOR DEVICE

Strained fully depleted silicon on insulator semiconductor device a...

Self aligned damascene gate

Shallow trench isolation (STI) region with high-K liner and method...

Method of manufacturing a semiconductor device having a U-shaped ga...

Semiconductor device and method of manufacture