adapted for resistive heating

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CPC
H01L45/126

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/126adapted for resistive heating

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristive device and method based on ion migration over one or mor...
- Patent number 11,657,871
- Issue date May 23, 2023
- AT&T Intellectual Property I, L.P.
- Sheldon Kent Meredith
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Phase-change memory cell
- Patent number 11,653,579
- Issue date May 16, 2023
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 11,653,578
- Issue date May 16, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,641,749
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Dong Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory and manufacturing method thereoff
- Patent number 11,637,241
- Issue date Apr 25, 2023
- Winbond Electronics Corp.
- Meng-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
WSiGe electrode structures for memory devices, and associated devic...
- Patent number 11,631,811
- Issue date Apr 18, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer phase change memory device
- Patent number 11,621,394
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device and operating method thereof
- Patent number 11,615,841
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Bilal Ahmad Janjua
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell resistive liner
- Patent number 11,545,624
- Issue date Jan 3, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 11,545,623
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a memory cell comprising a metal chalcogenide ma...
- Patent number 11,538,991
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Eugene P. Marsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to integrate DC and RF phase change switches into high-speed...
- Patent number 11,522,010
- Issue date Dec 6, 2022
- Northrop Grumman Systems Corporation
- Patrick B. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D vertical memory array cell structures with individual selectors...
- Patent number 11,522,016
- Issue date Dec 6, 2022
- Fu-Chang Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor integrated circuit
- Patent number 11,502,129
- Issue date Nov 15, 2022
- Research & Business Foundation Sungkyunkwan University
- Sungjoo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,495,292
- Issue date Nov 8, 2022
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
VIA structure and methods of forming the same
- Patent number 11,489,115
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,489,112
- Issue date Nov 1, 2022
- Intel Corporation
- Namrata S. Asuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a variable resistance memory device
- Patent number 11,482,670
- Issue date Oct 25, 2022
- Samsung Electronics Co., Ltd.
- Jiho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with a projection liner
- Patent number 11,476,418
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory and method of fabricating the same
- Patent number 11,476,417
- Issue date Oct 18, 2022
- Jiangsu Advanced Memory Technology Co., Ltd.
- Sheng-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device including a low-k d...
- Patent number 11,476,419
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Youngmin Ko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING
- Publication number 20240147874
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM
- Publication number 20240090353
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Samuel Sung Shik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
- Publication number 20240081159
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM
- Publication number 20240074336
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE
- Publication number 20240049477
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Bit Storage Device Using Phase Change Material
- Publication number 20240016071
- Publication date Jan 11, 2024
- Toshiba Global Commerce Solutions Holdings Corporation
- Timothy Crockett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20240016072
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
- Publication number 20230422644
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL
- Publication number 20230413694
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND...
- Publication number 20230403954
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT PHASE-CHANGE MEMORY DEVICE
- Publication number 20230397510
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING T...
- Publication number 20230389449
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE SWITCH
- Publication number 20230320105
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL STACKED SEMICONDUCTOR MEMORY
- Publication number 20230284464
- Publication date Sep 7, 2023
- KIOXIA Corporation
- Hidehiro SHIGA
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT
- Publication number 20230284543
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE NON-VOLATILE MEMORY
- Publication number 20230284460
- Publication date Sep 7, 2023
- KIOXIA Corporation
- Tomoki CHIBA
- G11 - INFORMATION STORAGE
Information Patent Application
CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...
- Publication number 20230263080
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20230253039
- Publication date Aug 10, 2023
- Macronix International Co., Ltd.
- Yu-Yu LIN
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR
- Publication number 20230231004
- Publication date Jul 20, 2023
- Samsung Electronics Co., Ltd.
- Byunghoon NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE STOP TO CONTROL HEATER HEIGHT VARIATION
- Publication number 20230200270
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Prasad Bhosale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programming Current Control for Artificial Intelligence (AI) Devices
- Publication number 20230189536
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS
- Publication number 20230189672
- Publication date Jun 15, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE
- Publication number 20230189667
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT
- Publication number 20230189668
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GLOBAL HEATER FOR PHASE CHANGE MEMORY
- Publication number 20230180644
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORMLY PATTERNED TWO-TERMINAL DEVICES
- Publication number 20230180485
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE WITH IMPROVED RETENTION CHARACTERISTICS...
- Publication number 20230170022
- Publication date Jun 1, 2023
- STMicroelectronics S.r.l
- Elisa PETRONI
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT
- Publication number 20230144050
- Publication date May 11, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY HAVING GRADUAL RESET
- Publication number 20230123642
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS

adapted for resistive heating

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnesium ion based synaptic device

Non-volatile memory

Memristive device and method based on ion migration over one or mor...

Phase-change memory cell

Phase-change material-based XOR logic gates

Nonvolatile tunable capacitive processing unit

Semiconductor device and method for fabricating the same

Memory device

Resistive random-access memory cell and manufacturing method thereof

Resistive random access memory and manufacturing method thereoff

WSiGe electrode structures for memory devices, and associated devic...

Multi-layer phase change memory device

Memory device and operating method thereof

Method for forming RRAM with a barrier layer

Diffusion barrier layer in programmable metallization cell

Integrated circuit structure

Semiconductor memory device having variable resistance elements pro...

Phase change memory cell resistive liner

Fabrication of electrodes for memory cells

Methods of forming a memory cell comprising a metal chalcogenide ma...

Method to integrate DC and RF phase change switches into high-speed...

3D vertical memory array cell structures with individual selectors...

Three-dimensional semiconductor integrated circuit

Resistive random access memory device with three-dimensional cross-...

VIA structure and methods of forming the same

Resistive random access memory device and methods of fabrication

Method of fabricating a variable resistance memory device

Phase change memory cell with a projection liner

Phase change memory and method of fabricating the same

Method for manufacturing a semiconductor device including a low-k d...

Patents Applicationslast 30 patents

PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM

MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE

Multi-Bit Storage Device Using Phase Change Material

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS

DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL

PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND...

LOW CURRENT PHASE-CHANGE MEMORY DEVICE

ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING T...

SOLID-STATE SWITCH

THREE DIMENSIONAL STACKED SEMICONDUCTOR MEMORY

PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT

VARIABLE RESISTANCE NON-VOLATILE MEMORY

CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...

MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR

SELECTIVE STOP TO CONTROL HEATER HEIGHT VARIATION

Programming Current Control for Artificial Intelligence (AI) Devices

PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE

SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT

GLOBAL HEATER FOR PHASE CHANGE MEMORY

UNIFORMLY PATTERNED TWO-TERMINAL DEVICES

PHASE CHANGE MEMORY DEVICE WITH IMPROVED RETENTION CHARACTERISTICS...

PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT

PHASE CHANGE MEMORY HAVING GRADUAL RESET