adapted for supplying ionic species

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H01L45/1266

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/1266adapted for supplying ionic species

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristive device and method based on ion migration over one or mor...
- Patent number 11,657,871
- Issue date May 23, 2023
- AT&T Intellectual Property I, L.P.
- Sheldon Kent Meredith
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory and manufacturing method thereoff
- Patent number 11,637,241
- Issue date Apr 25, 2023
- Winbond Electronics Corp.
- Meng-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a memory cell comprising a metal chalcogenide ma...
- Patent number 11,538,991
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Eugene P. Marsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor integrated circuit
- Patent number 11,502,129
- Issue date Nov 15, 2022
- Research & Business Foundation Sungkyunkwan University
- Sungjoo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,495,292
- Issue date Nov 8, 2022
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,489,112
- Issue date Nov 1, 2022
- Intel Corporation
- Namrata S. Asuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrochemically tunable, solid-state metamaterial-based devices
- Patent number 11,476,555
- Issue date Oct 18, 2022
- HRL Laboratories, LLC
- Christopher S. Roper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally sensitive ionic redox transistor
- Patent number 11,450,802
- Issue date Sep 20, 2022
- National Technology & Engineering Solutions of Sandia, LLC
- Yiyang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,444,125
- Issue date Sep 13, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive switching memory device based on multi-inputs
- Patent number 11,437,570
- Issue date Sep 6, 2022
- Yonsei University, University—Industry Foundation (UIF)
- Ki Tae Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,437,573
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal filament memory cells
- Patent number 11,430,949
- Issue date Aug 30, 2022
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered cell profile and fabrication
- Patent number 11,404,637
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,404,481
- Issue date Aug 2, 2022
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Formation of structurally robust nanoscale Ag-based conductive stru...
- Patent number 11,387,409
- Issue date Jul 12, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including variable resistance element
- Patent number 11,380,844
- Issue date Jul 5, 2022
- SK hynix Inc.
- Jae-Hyun Han
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memristor and neuromorphic device comprising the same
- Patent number 11,374,171
- Issue date Jun 28, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,355,705
- Issue date Jun 7, 2022
- Kioxia Corporation
- Kotaro Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for erasing a ReRAM memory cell
- Patent number 11,355,187
- Issue date Jun 7, 2022
- Microchip Technology Inc.
- Victor Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance change device, manufacturing method for the same, and st...
- Patent number 11,328,769
- Issue date May 10, 2022
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Proton-based two-terminal volatile memristive devices
- Patent number 11,322,683
- Issue date May 3, 2022
- TetraMem, Inc.
- Ning Ge
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Controlling positive feedback in filamentary RRAM structures
- Patent number 11,322,685
- Issue date May 3, 2022
- Applied Materials, Inc.
- Milan Pesić
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ionic-conducting resistor for exhaust constituent sensors
- Patent number 11,307,159
- Issue date Apr 19, 2022
- DELPHI TECHNOLOGIES IP LIMITED
- Alfredo Ibarra Covarrubias
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 11,258,009
- Issue date Feb 22, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20230253039
- Publication date Aug 10, 2023
- Macronix International Co., Ltd.
- Yu-Yu LIN
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR
- Publication number 20230231004
- Publication date Jul 20, 2023
- Samsung Electronics Co., Ltd.
- Byunghoon NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CBRAM BOTTOM ELECTRODE STRUCTURES
- Publication number 20230086109
- Publication date Mar 23, 2023
- Dialog Semiconductor US Inc.
- John R. Jameson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...
- Publication number 20230079392
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE-BRIDGING SEMICONDUCTOR MEMORY DEVICE FORMED BY SELECTIVE...
- Publication number 20230068851
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20230024213
- Publication date Jan 26, 2023
- KIOXIA Corporation
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTOR AND MEMORY DEVICE USING THE SAME
- Publication number 20230011421
- Publication date Jan 12, 2023
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Jea Gun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE INFILTRATED ORGANIC-INORGANIC HYBRID RESISTIVE RANDOM-A...
- Publication number 20230006133
- Publication date Jan 5, 2023
- Brookhaven Science Associates, LLC
- Chang-Yong Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220367806
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20220367801
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220336531
- Publication date Oct 20, 2022
- Kioxia Corporation
- Takuya KONNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME
- Publication number 20220320425
- Publication date Oct 6, 2022
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE AND STORAGE UNIT
- Publication number 20220293855
- Publication date Sep 15, 2022
- Sony Semiconductor Solutions Corporation
- Tetsuya MIZUGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...
- Publication number 20220285615
- Publication date Sep 8, 2022
- Kyungpook National University Industry-Academic Cooperation Foundation
- Jiyong Woo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220263024
- Publication date Aug 18, 2022
- KIOXIA Corporation
- Kotaro NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING POSITIVE FEEDBACK IN FILAMENTARY RRAM STRUCTURES
- Publication number 20220263022
- Publication date Aug 18, 2022
- Applied Materials, Inc.
- Milan Pesic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ReRAM Memory Array
- Publication number 20220262434
- Publication date Aug 18, 2022
- Microchip Technology Inc.
- Victor Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF
- Publication number 20220254996
- Publication date Aug 11, 2022
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTON-BASED TWO-TERMINAL VOLATILE MEMRISTIVE DEVICES
- Publication number 20220216399
- Publication date Jul 7, 2022
- Tetramem Inc.
- Ning Ge
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHYSICAL UNCLONABLE FUNCTIONS WITH COPPER-SILICON OXIDE PROGRAMMABL...
- Publication number 20220148982
- Publication date May 12, 2022
- Michael KOZICKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...
- Publication number 20220123208
- Publication date Apr 21, 2022
- Research & Business Foundation Sungkyunkwan University
- Woojong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Switching Element and Method for Manufacturing Same
- Publication number 20220123210
- Publication date Apr 21, 2022
- NANOBRIDGE SEMICONDUCTOR,INC.
- Naoki BANNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20220093859
- Publication date Mar 24, 2022
- WINBOND ELECTRONICS CORP.
- Bo-Lun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL IONIC ELECTRONIC TRANSISTORS
- Publication number 20220069206
- Publication date Mar 3, 2022
- ROBERT BOSCH GmbH
- Lei CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20220059763
- Publication date Feb 24, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
MIEC AND TUNNEL-BASED SELECTORS WITH IMPROVED RECTIFICATION CHARACT...
- Publication number 20220059764
- Publication date Feb 24, 2022
- Applied Materials, Inc.
- Milan Pesic
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNESIUM ION BASED SYNAPTIC DEVICE
- Publication number 20220045270
- Publication date Feb 10, 2022
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210408373
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES
- Publication number 20210399055
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun LOY
- G11 - INFORMATION STORAGE
Information Patent Application
TRUE RANDOM NUMBER GENERATOR (TRNG) CIRCUIT USING A DIFFUSIVE MEMRI...
- Publication number 20210382696
- Publication date Dec 9, 2021
- University of Massachusetts
- Jianhua Yang
- G06 - COMPUTING CALCULATING COUNTING

adapted for supplying ionic species

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnesium ion based synaptic device

Memristive device and method based on ion migration over one or mor...

Resistive random-access memory cell and manufacturing method thereof

Resistive random access memory and manufacturing method thereoff

Method for forming RRAM with a barrier layer

Diffusion barrier layer in programmable metallization cell

Integrated circuit structure

Semiconductor memory device having variable resistance elements pro...

Methods of forming a memory cell comprising a metal chalcogenide ma...

Three-dimensional semiconductor integrated circuit

Resistive random access memory device with three-dimensional cross-...

Resistive random access memory device and methods of fabrication

Electrochemically tunable, solid-state metamaterial-based devices

Thermally sensitive ionic redox transistor

Memory devices and methods of forming memory devices

Resistive switching memory device based on multi-inputs

Semiconductor device and method for manufacturing the same

Metal filament memory cells

Tapered cell profile and fabrication

Semiconductor memory device having variable resistance elements pro...

Formation of structurally robust nanoscale Ag-based conductive stru...

Semiconductor device including variable resistance element

Memristor and neuromorphic device comprising the same

Semiconductor memory device and method for manufacturing same

Method for erasing a ReRAM memory cell

Resistance change device, manufacturing method for the same, and st...

Proton-based two-terminal volatile memristive devices

Controlling positive feedback in filamentary RRAM structures

Ionic-conducting resistor for exhaust constituent sensors

Switching atomic transistor and method for operating same

Patents Applicationslast 30 patents

MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR

CBRAM BOTTOM ELECTRODE STRUCTURES

BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...

CONDUCTIVE-BRIDGING SEMICONDUCTOR MEMORY DEVICE FORMED BY SELECTIVE...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

SELECTOR AND MEMORY DEVICE USING THE SAME

METAL-OXIDE INFILTRATED ORGANIC-INORGANIC HYBRID RESISTIVE RANDOM-A...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME

STORAGE DEVICE AND STORAGE UNIT

THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

CONTROLLING POSITIVE FEEDBACK IN FILAMENTARY RRAM STRUCTURES

ReRAM Memory Array

RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF

PROTON-BASED TWO-TERMINAL VOLATILE MEMRISTIVE DEVICES

PHYSICAL UNCLONABLE FUNCTIONS WITH COPPER-SILICON OXIDE PROGRAMMABL...

MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...

Switching Element and Method for Manufacturing Same

METHOD OF MANUFACTURING RESISTIVE RANDOM ACCESS MEMORY

DIFFERENTIAL IONIC ELECTRONIC TRANSISTORS

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

MIEC AND TUNNEL-BASED SELECTORS WITH IMPROVED RECTIFICATION CHARACT...

MAGNESIUM ION BASED SYNAPTIC DEVICE

MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES

TRUE RANDOM NUMBER GENERATOR (TRNG) CIRCUIT USING A DIFFUSIVE MEMRI...