adding crystallising material or reactants forming it in situ to the liquid

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CPC
C30B19/106

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

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C30B19/106adding crystallising material or reactants forming it in situ to the liquid

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High refractive index organic solid crystal with controlled surface...
- Patent number 12,024,793
- Issue date Jul 2, 2024
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,784,045
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy of III-V materials and alloys
- Patent number 11,441,234
- Issue date Sep 13, 2022
- University of Louisville Research Foundation, Inc.
- Mahendra K. Sunkara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
- Patent number 11,371,161
- Issue date Jun 28, 2022
- Denso Corporation
- Tatsuji Nagaoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,251,042
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,415,152
- Issue date Sep 17, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 9,732,437
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an n-type SiC single crystal from a Si—C solut...
- Patent number 9,702,057
- Issue date Jul 11, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for increasing the conversion of group III metals to group I...
- Patent number 7,883,645
- Issue date Feb 8, 2011
- Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung E.V.
- Jochen Friedrich
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Crucible for epitaxy from the liquid phase of semiconductor layers...
- Patent number 4,748,932
- Issue date Jun 7, 1988
- U.S. Philips Corporation
- Bernard Latorre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid-phase epitaxial growth method of a IIIb-Vb group compound
- Patent number 4,609,411
- Issue date Sep 2, 1986
- Mitsubishi Monsanto Chemical Co., Ltd.
- Yasuji Kohashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the liquid phase epitaxial deposition of a monocrystall...
- Patent number 4,532,001
- Issue date Jul 30, 1985
- Jean-Louis Benchimol
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing a plurality of castings having a predetermined...
- Patent number 4,529,027
- Issue date Jul 16, 1985
- U.S. Philips Corporation
- John C. Brice
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth of compound semiconductor mixed crystals under contr...
- Patent number 4,315,796
- Issue date Feb 16, 1982
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing compound semiconductor crystals
- Patent number 4,179,317
- Issue date Dec 18, 1979
- Kokusai Denshin Denwa Kabushiki Kaisha
- Kazuo Sakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing epitaxial layers on multiple semiconductor wafer...
- Patent number 4,063,972
- Issue date Dec 20, 1977
- Sumitomo Electric Industries, Ltd.
- Shin-ichi Akai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for independent control of volatile dopants in liquid phase...
- Patent number 4,053,334
- Issue date Oct 11, 1977
- General Electric Company
- Roger S. Ehle
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the epitaxial growth from the liquid phase
- Patent number 3,972,753
- Issue date Aug 3, 1976
- U.S. Philips Corporation
- Bernard Legros
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing multi-layer semiconductor hetero-structures on...
- Patent number 3,948,692
- Issue date Apr 6, 1976
- Lev Vasilievich Golubev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solution growth system for the preparation of semiconductor materials
- Patent number 3,933,539
- Issue date Jan 20, 1976
- Texas Instruments Incorporated
- William W. Gartman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for production of liquid phase epitaxial layer...
- Patent number 3,933,538
- Issue date Jan 20, 1976
- Sumitomo Electric Industries, Ltd.
- Shin-ichi Akai
- C30 - CRYSTAL GROWTH
Information Patent Grant
3917125
- Patent number 3,917,125
- Issue date Nov 4, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3902860
- Patent number 3,902,860
- Issue date Sep 2, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3902454
- Patent number 3,902,454
- Issue date Sep 2, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3899371
- Patent number 3,899,371
- Issue date Aug 12, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3897281
- Patent number 3,897,281
- Issue date Jul 29, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3893875
- Patent number 3,893,875
- Issue date Jul 8, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3891478
- Patent number 3,891,478
- Issue date Jun 24, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3880680
- Patent number 3,880,680
- Issue date Apr 29, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3858551
- Patent number 3,858,551
- Issue date Jan 7, 1975
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20240030027
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFAC...
- Publication number 20230357956
- Publication date Nov 9, 2023
- Do Hyung KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...
- Publication number 20230037175
- Publication date Feb 2, 2023
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20220130669
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20210134594
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIQUID PHASE EPITAXY OF III-V MATERIALS AND ALLOYS
- Publication number 20210108330
- Publication date Apr 15, 2021
- UNIVERSITY OF LOUISVILLE RESEARCH FOUNDATION, INC.
- Mahendra K. Sunkara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20200385884
- Publication date Dec 10, 2020
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299858
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...
- Publication number 20180163323
- Publication date Jun 14, 2018
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS
- Publication number 20170084400
- Publication date Mar 23, 2017
- MONASH UNIVERSITY
- Yi-bing Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170009374
- Publication date Jan 12, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYERED PLATINUM ON FREESTANDING PALLADIUM NANO-SUBSTRATES FOR ELEC...
- Publication number 20160276674
- Publication date Sep 22, 2016
- Georgia Tech Research Corporation
- Younan Xia
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160122901
- Publication date May 5, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL
- Publication number 20150299896
- Publication date Oct 22, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Increasing the Conversion of Group III Metals to Group I...
- Publication number 20080290327
- Publication date Nov 27, 2008
- Jochen Friedrich
- C30 - CRYSTAL GROWTH

adding crystallising material or reactants forming it in situ to the liquid

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High refractive index organic solid crystal with controlled surface...

Formation of single crystal semiconductors using planar vapor liqui...

Liquid phase epitaxy of III-V materials and alloys

Method of forming oxide film, method of manufacturing semiconductor...

Formation of single crystal semiconductors using planar vapor liqui...

SiC single crystal and method for producing same

SiC single crystal and method for producing same

Method for producing an n-type SiC single crystal from a Si—C solut...

Method for increasing the conversion of group III metals to group I...

Crucible for epitaxy from the liquid phase of semiconductor layers...

Liquid-phase epitaxial growth method of a IIIb-Vb group compound

Process for the liquid phase epitaxial deposition of a monocrystall...

Method of preparing a plurality of castings having a predetermined...

Crystal growth of compound semiconductor mixed crystals under contr...

Method for producing compound semiconductor crystals

Method for growing epitaxial layers on multiple semiconductor wafer...

Method for independent control of volatile dopants in liquid phase...

Method for the epitaxial growth from the liquid phase

Method of preparing multi-layer semiconductor hetero-structures on...

Solution growth system for the preparation of semiconductor materials

Method and apparatus for production of liquid phase epitaxial layer...

3917125

3902860

3902454

3899371

3897281

3893875

3891478

3880680

3858551

Patents Applicationslast 30 patents

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFAC...

HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

LIQUID PHASE EPITAXY OF III-V MATERIALS AND ALLOYS

METHOD OF FORMING OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...

PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

LAYERED PLATINUM ON FREESTANDING PALLADIUM NANO-SUBSTRATES FOR ELEC...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL

Method for Increasing the Conversion of Group III Metals to Group I...