Liquid-phase epitaxial-layer growth

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Patents Grantslast 30 patents

Information Patent Grant
Additively manufactured single-crystal metallic components, and met...
- Patent number 12,076,818
- Issue date Sep 3, 2024
- HRL Laboratories, LLC
- John H. Martin
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Group-III element nitride semiconductor substrate
- Patent number 12,057,307
- Issue date Aug 6, 2024
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electro-formed metal foils
- Patent number 12,048,253
- Issue date Jul 23, 2024
- American Superconductor Corporation
- Cornelis Leo Hans Thieme
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Textured metal substrates for negative electrodes of lithium metal...
- Patent number 12,040,479
- Issue date Jul 16, 2024
- GM Global Technology Operations LLC
- Andrew C. Bobel
- C30 - CRYSTAL GROWTH
Information Patent Grant
High refractive index organic solid crystal with controlled surface...
- Patent number 12,024,793
- Issue date Jul 2, 2024
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Template-assisted synthesis of 2D nanosheets using nanoparticle tem...
- Patent number 11,964,879
- Issue date Apr 23, 2024
- Nanoco 2D Materials Limited
- Steven Daniels
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Additively manufactured single-crystal metallic components, and met...
- Patent number 11,865,641
- Issue date Jan 9, 2024
- HRL Laboratories, LLC
- John H. Martin
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,784,045
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)
- Patent number 11,725,300
- Issue date Aug 15, 2023
- EPIR, INC.
- Sushant Sonde
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated crucible and die system for sapphire sheet growing
- Patent number 11,713,519
- Issue date Aug 1, 2023
- Sapphire Systems, Inc.
- John Outwater
- C30 - CRYSTAL GROWTH
Information Patent Grant
Targeted heat control system and method for integrated crucible and...
- Patent number 11,713,520
- Issue date Aug 1, 2023
- Sapphire Systems, Inc.
- John Outwater
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystallization of two-dimensional structures comprising multiple t...
- Patent number 11,621,163
- Issue date Apr 4, 2023
- The Regents of the University of California
- Nobuhiko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 (III) nitride thick layer formed on an underlying layer ha...
- Patent number 11,473,212
- Issue date Oct 18, 2022
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 11,453,956
- Issue date Sep 27, 2022
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC crucible, SiC sintered body, and method of producing SiC single...
- Patent number 11,440,849
- Issue date Sep 13, 2022
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy of III-V materials and alloys
- Patent number 11,441,234
- Issue date Sep 13, 2022
- University of Louisville Research Foundation, Inc.
- Mahendra K. Sunkara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon-based molten composition and method for manufacturing silic...
- Patent number 11,427,926
- Issue date Aug 30, 2022
- LG Chem, Ltd.
- Chan Yeup Chung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride crystal and seed substrate
- Patent number 11,377,757
- Issue date Jul 5, 2022
- Panasonic Holdings Corporation
- Yoshio Okayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
- Patent number 11,373,864
- Issue date Jun 28, 2022
- Denso Corporation
- Tatsuji Nagaoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming oxide film, method of manufacturing semiconductor...
- Patent number 11,371,161
- Issue date Jun 28, 2022
- Denso Corporation
- Tatsuji Nagaoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film formation apparatus and method of manufacturing semiconductor...
- Patent number 11,280,023
- Issue date Mar 22, 2022
- Denso Corporation
- Tatsuji Nagaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a group III nitride semiconductor by controlli...
- Patent number 11,280,024
- Issue date Mar 22, 2022
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,251,042
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride substrate and method for producing group III nitr...
- Patent number 11,248,310
- Issue date Feb 15, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yoshio Okayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a group III-nitride crystal comprising a nu...
- Patent number 11,220,759
- Issue date Jan 11, 2022
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of forming materials
- Patent number 11,164,600
- Issue date Nov 2, 2021
- Seagate Technology LLC
- Tong Zhao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, gallium nitride single crystal, and method...
- Patent number 11,162,189
- Issue date Nov 2, 2021
- Dexerials Corporation
- Kazuhiro Yagihashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 11,142,842
- Issue date Oct 12, 2021
- Denso Corporation
- Tatsuji Nagaoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making epitaxial structure
- Patent number 11,078,597
- Issue date Aug 3, 2021
- Tsinghua University
- Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a GaN single crystal comprising disposing a nucle...
- Patent number 10,975,492
- Issue date Apr 13, 2021
- SLT TECHNOLOGIES, INC.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING BETA-GA2O3/BETA-GA2O3 MULTILAYER BODY
- Publication number 20240417881
- Publication date Dec 19, 2024
- Mitsubishi Gas Chemical Company, Inc.
- Hideyuki SEKIWA
- C30 - CRYSTAL GROWTH
Information Patent Application
ELECTRO-FORMED METAL FOILS
- Publication number 20240407270
- Publication date Dec 5, 2024
- American Superconductor Corporation
- Cornelis Leo Hans Thieme
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
TREATMENT SOLUTION AND TREATMENT METHOD
- Publication number 20240352578
- Publication date Oct 24, 2024
- Kabushiki Kaisha Toshiba
- Kenya UCHIDA
- A62 - LIFE-SAVING FIRE-FIGHTING
Information Patent Application
TREATMENT SOLUTION AND TREATMENT METHOD
- Publication number 20240247369
- Publication date Jul 25, 2024
- Kabushiki Kaisha Toshiba
- Kenya UCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240229295
- Publication date Jul 11, 2024
- Sumitomo Electric Industries, Ltd.
- Yikang ZUO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240183068
- Publication date Jun 6, 2024
- Sumitomo Electric Industries, Ltd.
- Yikang ZUO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL DIAMOND, METHOD OF MANUFACTURING THE SAME, AND METHO...
- Publication number 20240183070
- Publication date Jun 6, 2024
- Sumitomo Electric Industries, Ltd.
- Hitoshi SUMIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL DIAMOND AND DIAMOND COMPOSITE CONTAINING THE SAME
- Publication number 20240183069
- Publication date Jun 6, 2024
- Sumitomo Electric Industries, Ltd.
- Yoshiki NISHIBAYASHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240175167
- Publication date May 30, 2024
- Sumitomo Electric Industries, Ltd.
- Yikang ZUO
- C30 - CRYSTAL GROWTH
Information Patent Application
CHIRAL ORGANIC OPTOELECTRONIC MOLECULES WITH TUNABLE REFRACTIVE IND...
- Publication number 20240150935
- Publication date May 9, 2024
- Meta Platforms Technologies, LLC
- Lafe Joseph Purvis
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20240030027
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP I...
- Publication number 20230399770
- Publication date Dec 14, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- AKIO UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
ADDITIVELY MANUFACTURED SINGLE-CRYSTAL METALLIC COMPONENTS, AND MET...
- Publication number 20230364714
- Publication date Nov 16, 2023
- HRL LABORATORIES, LLC
- John H. MARTIN
- B22 - CASTING POWDER METALLURGY
Information Patent Application
DEVICE AND METHOD FOR MANUFACTURING A CRYSTALLINE CONVERSION LAYER...
- Publication number 20230357948
- Publication date Nov 9, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Jean-Marie VERILHAC
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFAC...
- Publication number 20230357956
- Publication date Nov 9, 2023
- Do Hyung KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20230257902
- Publication date Aug 17, 2023
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL FILM PROD...
- Publication number 20230250554
- Publication date Aug 10, 2023
- Shin-Etsu Chemical Co., Ltd.
- Toshiaki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMIC...
- Publication number 20230250555
- Publication date Aug 10, 2023
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230220587
- Publication date Jul 13, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C30 - CRYSTAL GROWTH
Information Patent Application
BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL, FARADAY...
- Publication number 20230194902
- Publication date Jun 22, 2023
- Shin-Etsu Chemical Co., Ltd.
- Toshiaki WATANABE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR PREPARING AGNPS@SASP SUBSTRATE MATERIAL AND APPLICATION...
- Publication number 20230168202
- Publication date Jun 1, 2023
- Henan Agricultural University
- Miaoyun LI
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF PBSE NANOSTRUCTURES BY EMPLOYING CHEMICAL BATH DEPOS...
- Publication number 20230160099
- Publication date May 25, 2023
- Illinois Tool Works Inc.
- Richard S. Kim
- B82 - NANO-TECHNOLOGY
Information Patent Application
FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONA...
- Publication number 20230119023
- Publication date Apr 20, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230066135
- Publication date Mar 2, 2023
- Sanken Electric Co., Ltd
- Toru YOSHIE
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...
- Publication number 20230037175
- Publication date Feb 2, 2023
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Application
In-situ Laser Annealing of Te growth defects in CdZnTe (iLAST-CZT)
- Publication number 20230002928
- Publication date Jan 5, 2023
- Sushant Sonde
- C30 - CRYSTAL GROWTH
Information Patent Application
TEXTURED METAL SUBSTRATES FOR NEGATIVE ELECTRODES OF LITHIUM METAL...
- Publication number 20220416220
- Publication date Dec 29, 2022
- GM GLOBAL TECHNOLOGY OPERATIONS LLC
- Andrew C. Bobel
- C30 - CRYSTAL GROWTH
Information Patent Application
Composite Wavelength Converter
- Publication number 20220393080
- Publication date Dec 8, 2022
- Friedrich-Alexander-Universitat Erlangen-Nurnberg
- Yuriy Zorenko
- C30 - CRYSTAL GROWTH
Information Patent Application
STRAIN ENGINEERING AND EPITAXIAL STABILIZATION OF HALIDE PEROVSKITES
- Publication number 20220320433
- Publication date Oct 6, 2022
- The Regents of the University of California
- Sheng Xu
- C30 - CRYSTAL GROWTH

Liquid-phase epitaxial-layer growth

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

Additively manufactured single-crystal metallic components, and met...

Group-III element nitride semiconductor substrate

Electro-formed metal foils

Textured metal substrates for negative electrodes of lithium metal...

High refractive index organic solid crystal with controlled surface...

Template-assisted synthesis of 2D nanosheets using nanoparticle tem...

Additively manufactured single-crystal metallic components, and met...

Formation of single crystal semiconductors using planar vapor liqui...

In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)

Integrated crucible and die system for sapphire sheet growing

Targeted heat control system and method for integrated crucible and...

Crystallization of two-dimensional structures comprising multiple t...

Group 13 (III) nitride thick layer formed on an underlying layer ha...

Method for growth of a merged crystal by bonding at least a first a...

SiC crucible, SiC sintered body, and method of producing SiC single...

Liquid phase epitaxy of III-V materials and alloys

Silicon-based molten composition and method for manufacturing silic...

Method for producing group III nitride crystal and seed substrate

Method of forming oxide film, method of manufacturing semiconductor...

Method of forming oxide film, method of manufacturing semiconductor...

Film formation apparatus and method of manufacturing semiconductor...

Method for producing a group III nitride semiconductor by controlli...

Formation of single crystal semiconductors using planar vapor liqui...

Group III nitride substrate and method for producing group III nitr...

Method of manufacturing a group III-nitride crystal comprising a nu...

Methods of forming materials

Semiconductor substrate, gallium nitride single crystal, and method...

Film formation apparatus and film formation method

Method for making epitaxial structure

Method of forming a GaN single crystal comprising disposing a nucle...

Patents Applicationslast 30 patents

METHOD FOR PRODUCING BETA-GA2O3/BETA-GA2O3 MULTILAYER BODY

ELECTRO-FORMED METAL FOILS

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

TREATMENT SOLUTION AND TREATMENT METHOD

TREATMENT SOLUTION AND TREATMENT METHOD

SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

SINGLE-CRYSTAL DIAMOND, METHOD OF MANUFACTURING THE SAME, AND METHO...

SINGLE-CRYSTAL DIAMOND AND DIAMOND COMPOSITE CONTAINING THE SAME

SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

CHIRAL ORGANIC OPTOELECTRONIC MOLECULES WITH TUNABLE REFRACTIVE IND...

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP I...

ADDITIVELY MANUFACTURED SINGLE-CRYSTAL METALLIC COMPONENTS, AND MET...

DEVICE AND METHOD FOR MANUFACTURING A CRYSTALLINE CONVERSION LAYER...

METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFAC...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL FILM PROD...

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMIC...

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL, FARADAY...

METHOD FOR PREPARING AGNPS@SASP SUBSTRATE MATERIAL AND APPLICATION...

FABRICATION OF PBSE NANOSTRUCTURES BY EMPLOYING CHEMICAL BATH DEPOS...

FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONA...

SEMICONDUCTOR DEVICE

HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...

In-situ Laser Annealing of Te growth defects in CdZnTe (iLAST-CZT)

TEXTURED METAL SUBSTRATES FOR NEGATIVE ELECTRODES OF LITHIUM METAL...

Composite Wavelength Converter

STRAIN ENGINEERING AND EPITAXIAL STABILIZATION OF HALIDE PEROVSKITES