adding crystallising material or reactants forming it in situ to the melt

Industry

CPC
C30B11/04

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient

Current Industry

C30B11/04adding crystallising material or reactants forming it in situ to the melt

Industries

Patents Grantslast 30 patents

Information Patent Grant
SiC crucible, SiC sintered body, and method of producing SiC single...
- Patent number 11,440,849
- Issue date Sep 13, 2022
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Scintillation crystal, a radiation detection system including the s...
- Patent number 10,947,452
- Issue date Mar 16, 2021
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. Menge
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Gallium-arsenide-based compound semiconductor crystal and wafer group
- Patent number 10,815,586
- Issue date Oct 27, 2020
- Sumitomo Electric Industries, Ltd.
- Yukio Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a scintillator material of elpasolite type
- Patent number 10,598,800
- Issue date Mar 24, 2020
- Saint-Gobain Cristaux et Detecteurs
- Vladimir Ouspenski
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Scintillation crystal, a radiation detection system including the s...
- Patent number 10,442,989
- Issue date Oct 15, 2019
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. Menge
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method for preparing polycrystalline silicon ingot
- Patent number 10,227,711
- Issue date Mar 12, 2019
- JIANG XI SAI WEI LDK SOLAR HI-TECH CO., LTD.
- Dongli Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of a scintillator material of elpasolite type
- Patent number 10,180,503
- Issue date Jan 15, 2019
- Saint-Gobain Cristaux et Detecteurs
- Vladimir Ouspenski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing SiC single crystal
- Patent number 10,167,573
- Issue date Jan 1, 2019
- Shin-Etsu Chemical Co., Ltd.
- Tadao Nomura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Scintillation crystal, a radiation detection system including the s...
- Patent number 10,053,624
- Issue date Aug 21, 2018
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. Menge
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of a scintillator material of elpasolite type
- Patent number 9,983,318
- Issue date May 29, 2018
- Saint-Gobain Cristaux et Detecteurs
- Vladimir Ouspenski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming a scintillation crystal including a rare earth ha...
- Patent number 9,796,922
- Issue date Oct 24, 2017
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. Menge
- C30 - CRYSTAL GROWTH
Information Patent Grant
Material processing through optically transmissive slag
- Patent number 9,770,781
- Issue date Sep 26, 2017
- SIEMENS ENERGY, INC.
- Gerald J. Bruck
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Fabrication of a scintillator material of elpasolite type
- Patent number 9,599,727
- Issue date Mar 21, 2017
- Saint-Gobain Cristaux et Detecteurs
- Vladimir Ouspenski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline silicon ingot, preparation method thereof, and poly...
- Patent number 9,562,304
- Issue date Feb 7, 2017
- JIANG XI SAI WEI LDK SOLAR HI-TECH CO., LTD.
- Dongli Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fluorite
- Patent number 9,448,330
- Issue date Sep 20, 2016
- Nihon Kessho Kogaku Co., Ltd.
- Takafumi Yamazaki
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of loading a charge of polysilicon into a crucible
- Patent number 9,359,691
- Issue date Jun 7, 2016
- MEMC Electronic Materials SpA
- Umberto Martini
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus and method for the production of ingots
- Patent number 9,315,917
- Issue date Apr 19, 2016
- Solar World Industries America Inc.
- Nathan Stoddard
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production of radiation-resistant fluoride crystals, in particular...
- Patent number 9,194,057
- Issue date Nov 24, 2015
- Carl Zeiss SMT GmbH
- Ulrich Pahl
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Stabilized thallium bromide radiation detectors and methods of maki...
- Patent number 9,194,958
- Issue date Nov 24, 2015
- Lawrence Livermore National Security, LLC
- Cedric Rocha Leao
- G01 - MEASURING TESTING
Information Patent Grant
Single crystal casting apparatus
- Patent number 9,095,894
- Issue date Aug 4, 2015
- Rolls-Royce PLC
- John Harold Boswell
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Room temperature aluminum antimonide radiation detector and methods...
- Patent number 8,969,803
- Issue date Mar 3, 2015
- Lawrence Livermore National Security, LLC
- Vincenzo Lordi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and system for controlling resistivity in ingots made of com...
- Patent number 8,968,467
- Issue date Mar 3, 2015
- Silicor Materials Inc.
- Fritz Kirscht
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for doping a semiconductor material
- Patent number 8,900,981
- Issue date Dec 2, 2014
- Apollon Solar
- Maxime Forster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing doped gallium arsenide substrate wafers havin...
- Patent number 8,815,392
- Issue date Aug 26, 2014
- Freiberger Compound Materials GmbH
- Ulrich Kretzer
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fluorite
- Patent number 8,784,970
- Issue date Jul 22, 2014
- Nihon Kessho Kogaku Co., Ltd.
- Takafumi Yamazaki
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for the manufacture of doped semiconductor single crystals,...
- Patent number 8,771,560
- Issue date Jul 8, 2014
- Freiberger Compound Materials GmbH
- Ulrich Kretzer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Germanium enriched silicon material for making solar cells
- Patent number 8,758,507
- Issue date Jun 24, 2014
- Silicor Materials Inc.
- Fritz G. Kirscht
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Crystal growth system and method for lead-contained compositions us...
- Patent number 8,728,238
- Issue date May 20, 2014
- H.C. Materials Corporation
- Pengdi Han
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Doping apparatus for simultaneously injecting two dopants into a se...
- Patent number 8,715,416
- Issue date May 6, 2014
- Sumco Techxiv Corporation
- Yasuhito Narushima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth system and method for lead-contained compositions us...
- Patent number 8,535,442
- Issue date Sep 17, 2013
- H.C. Materials Corporation
- Pengdi Han
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
CRYSTAL GROWTH DOPING APPARATUS AND CRYSTAL GROWTH DOPING METHOD
- Publication number 20230042128
- Publication date Feb 9, 2023
- GLOBALWAFERS CO., LTD.
- YU-CHIH CHU
- C30 - CRYSTAL GROWTH
Information Patent Application
Orthogonal-phase BaGa4Se7 compound, Orthogonal-phase BaGa4Se7 Nonli...
- Publication number 20220187682
- Publication date Jun 16, 2022
- Tianjin University of Technology
- Hongwei Yu
- C30 - CRYSTAL GROWTH
Information Patent Application
SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE S...
- Publication number 20200071611
- Publication date Mar 5, 2020
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. MENGE
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM-ARSENIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL AND WAFER GROUP
- Publication number 20190352800
- Publication date Nov 21, 2019
- Sumitomo Electric Industries, Ltd.
- Yukio ISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE
- Publication number 20190107636
- Publication date Apr 11, 2019
- Saint-Gobain Cristaux et Detecteurs
- Vladimir OUSPENSKI
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE S...
- Publication number 20180327663
- Publication date Nov 15, 2018
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. MENGE
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE
- Publication number 20180246230
- Publication date Aug 30, 2018
- Saint-Gobain Cristaux et Detecteurs
- Vladimir OUSPENSKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE S...
- Publication number 20180010041
- Publication date Jan 11, 2018
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. MENGE
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE
- Publication number 20170139059
- Publication date May 18, 2017
- Saint-Gobain Cristaux et Detecteurs
- Vladimir OUSPENSKI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS US...
- Publication number 20160251773
- Publication date Sep 1, 2016
- CTG ADVANCED MATERIALS, LLC
- Pengdi HAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING A SCINTILLATION CRYSTAL INCLUDING A RARE EARTH HA...
- Publication number 20160122639
- Publication date May 5, 2016
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. MENGE
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE
- Publication number 20160103232
- Publication date Apr 14, 2016
- Saint-Gobain Cristaux et Detecteurs
- Vladimir OUSPENSKI
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SILICON INGOT, PREPARATION METHOD THEREOF, AND POLY...
- Publication number 20150056123
- Publication date Feb 26, 2015
- JIANG XI SAI WEI LDK SOLAR HI-TECH CO., LTD.
- Dongli Hu
- C30 - CRYSTAL GROWTH
Information Patent Application
MATERIAL PROCESSING THROUGH OPTICALLY TRANSMISSIVE SLAG
- Publication number 20140220374
- Publication date Aug 7, 2014
- Gerald J. Bruck
- C30 - CRYSTAL GROWTH
Information Patent Application
MOBILE ELECTRONIC DEVICE COMPRISING A MODIFIED SAPPHIRE
- Publication number 20140160649
- Publication date Jun 12, 2014
- GT CRYSTAL SYSTEMS, LLC
- David B. Joyce
- C30 - CRYSTAL GROWTH
Information Patent Application
Fluorite
- Publication number 20140099471
- Publication date Apr 10, 2014
- NIHON KESSHO KOGAKU CO., LTD.
- Takafumi Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
STABILIZED THALLIUM BROMIDE RADIATION DETECTORS AND METHODS OF MAKI...
- Publication number 20140097349
- Publication date Apr 10, 2014
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Cedric Rocha Leao
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLE AND METHOD FOR PRODUCING A SILICON BLOCK
- Publication number 20140069324
- Publication date Mar 13, 2014
- Bjoern SEIPEL
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF LOADING A CHARGE OF POLYSILICON INTO A CRUCIBLE
- Publication number 20140060422
- Publication date Mar 6, 2014
- MEMC ELECTRONIC MATERIALS SPA
- Umberto Martini
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS
- Publication number 20140030501
- Publication date Jan 30, 2014
- Nathan STODDARD
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVIN...
- Publication number 20130320242
- Publication date Dec 5, 2013
- FREIBERGER COMPOUND MATERIALS GMBH
- Ulrich KRETZER
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS US...
- Publication number 20130312657
- Publication date Nov 28, 2013
- H.C. MATERIALS CORPORATION
- PENGDI HAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON BLOCKS
- Publication number 20130219967
- Publication date Aug 29, 2013
- centrotherm SiTec GmbH
- Stephan Hussy
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DOPING A SEMICONDUCTOR MATERIAL
- Publication number 20130115762
- Publication date May 9, 2013
- SILTRONIX
- Maxime Forster
- C30 - CRYSTAL GROWTH
Information Patent Application
Fluorite
- Publication number 20130115425
- Publication date May 9, 2013
- NIHON KESSHO KOGAKU CO., LTD.
- Takafumi Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
SCINTILLATION CRYSTAL INCLUDING A RARE EARTH HALIDE, AND A RADIATIO...
- Publication number 20120305778
- Publication date Dec 6, 2012
- Saint-Gobain Ceramics & Plastics, Inc.
- Peter R. Menge
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SILICON INGOT
- Publication number 20120175553
- Publication date Jul 12, 2012
- Andreas Krause
- C30 - CRYSTAL GROWTH
Information Patent Application
Production of Radiation-Resistant Fluoride Crystals, in Particular...
- Publication number 20120164061
- Publication date Jun 28, 2012
- Carl Zeiss SMT GMBH
- Ulrich PAHL
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SiC SINGLE CRYSTAL
- Publication number 20120132130
- Publication date May 31, 2012
- Shin-Etsu Chemical Co., Ltd.
- Tadao Nomura
- C30 - CRYSTAL GROWTH
Information Patent Application
PIEZOELECTRIC SINGLE CRYSTAL INGOT, PRODUCING METHOD THEREFOR AND P...
- Publication number 20120043494
- Publication date Feb 23, 2012
- JFE MINERAL COMPANY, LTD.
- Mitsuyoshi Matsushita
- C30 - CRYSTAL GROWTH

adding crystallising material or reactants forming it in situ to the melt

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC crucible, SiC sintered body, and method of producing SiC single...

Scintillation crystal, a radiation detection system including the s...

Gallium-arsenide-based compound semiconductor crystal and wafer group

Fabrication of a scintillator material of elpasolite type

Scintillation crystal, a radiation detection system including the s...

Method for preparing polycrystalline silicon ingot

Fabrication of a scintillator material of elpasolite type

Method of producing SiC single crystal

Scintillation crystal, a radiation detection system including the s...

Fabrication of a scintillator material of elpasolite type

Method of forming a scintillation crystal including a rare earth ha...

Material processing through optically transmissive slag

Fabrication of a scintillator material of elpasolite type

Polycrystalline silicon ingot, preparation method thereof, and poly...

Fluorite

Method of loading a charge of polysilicon into a crucible

Apparatus and method for the production of ingots

Production of radiation-resistant fluoride crystals, in particular...

Stabilized thallium bromide radiation detectors and methods of maki...

Single crystal casting apparatus

Room temperature aluminum antimonide radiation detector and methods...

Method and system for controlling resistivity in ingots made of com...

Method for doping a semiconductor material

Process for producing doped gallium arsenide substrate wafers havin...

Fluorite

Process for the manufacture of doped semiconductor single crystals,...

Germanium enriched silicon material for making solar cells

Crystal growth system and method for lead-contained compositions us...

Doping apparatus for simultaneously injecting two dopants into a se...

Crystal growth system and method for lead-contained compositions us...

Patents Applicationslast 30 patents

CRYSTAL GROWTH DOPING APPARATUS AND CRYSTAL GROWTH DOPING METHOD

Orthogonal-phase BaGa4Se7 compound, Orthogonal-phase BaGa4Se7 Nonli...

SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE S...

GALLIUM-ARSENIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL AND WAFER GROUP

FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE

SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE S...

FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE

SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE S...

FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE

CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS US...

METHOD OF FORMING A SCINTILLATION CRYSTAL INCLUDING A RARE EARTH HA...

FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE

POLYCRYSTALLINE SILICON INGOT, PREPARATION METHOD THEREOF, AND POLY...

MATERIAL PROCESSING THROUGH OPTICALLY TRANSMISSIVE SLAG

MOBILE ELECTRONIC DEVICE COMPRISING A MODIFIED SAPPHIRE

Fluorite

STABILIZED THALLIUM BROMIDE RADIATION DETECTORS AND METHODS OF MAKI...

CRUCIBLE AND METHOD FOR PRODUCING A SILICON BLOCK

METHOD OF LOADING A CHARGE OF POLYSILICON INTO A CRUCIBLE

APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS

PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVIN...

CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS US...

METHOD AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON BLOCKS

METHOD FOR DOPING A SEMICONDUCTOR MATERIAL

Fluorite

SCINTILLATION CRYSTAL INCLUDING A RARE EARTH HALIDE, AND A RADIATIO...

METHOD FOR PRODUCING A SILICON INGOT

Production of Radiation-Resistant Fluoride Crystals, in Particular...

METHOD OF PRODUCING SiC SINGLE CRYSTAL

PIEZOELECTRIC SINGLE CRYSTAL INGOT, PRODUCING METHOD THEREFOR AND P...