adjoining the input or output region of a field-effect device

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H01L29/0653

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0653adjoining the input or output region of a field-effect device

Industries

Patents Grantslast 30 patents

Information Patent Grant
High voltage field effect transistor with vertical current paths an...
- Patent number 11,978,774
- Issue date May 7, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number RE49963
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Ki Hwan Kim
Information Patent Grant
Semiconductor device with doped region between gate and drain
- Patent number 11,978,797
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lian-Jie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,973,110
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniaturized transistor structure with controlled dimensions of sou...
- Patent number 11,973,120
- Issue date Apr 30, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices
- Patent number 11,973,082
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Seokhyeon Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET channel on oxide structures and related methods
- Patent number 11,972,981
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,973,109
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Young-Hun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array including epitaxial source lines and bit lines
- Patent number 11,974,441
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including different nitride regions improving...
- Patent number 11,967,641
- Issue date Apr 23, 2024
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with nanowires and methods for fabricating th...
- Patent number 11,967,595
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Jae Jung Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,961,838
- Issue date Apr 16, 2024
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative capacitance transistor with external ferroelectric structure
- Patent number 11,961,897
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Hsing Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitance reduction for back-side power rail device
- Patent number 11,961,915
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,550
- Issue date Apr 9, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming air spacers in semiconductor devices
- Patent number 11,955,535
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a gate structure in a dual-depth tren...
- Patent number 11,955,514
- Issue date Apr 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including protruding insulation portions betw...
- Patent number 11,955,517
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
RF MOS varactor
- Patent number 11,955,530
- Issue date Apr 9, 2024
- Texas Instruments Incorporated
- Jeff Archimedes Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power reduction in finFET structures
- Patent number 11,948,839
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sideways vias in isolation areas to contact interior layers in stac...
- Patent number 11,942,416
- Issue date Mar 26, 2024
- Intel Corporation
- Ehren Mannebach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,942,552
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,942,479
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having asymmetrical source/drain
- Patent number 11,942,515
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Jongki Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric structures for semiconductor devices
- Patent number 11,935,921
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,935,950
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with oxide-nitride stack
- Patent number 11,935,839
- Issue date Mar 19, 2024
- Icemos Technology Corporation
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPACITANCE REDUCTION FOR BACKSIDE POWER RAIL DEVICE
- Publication number 20240145562
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...
- Publication number 20240145471
- Publication date May 2, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES
- Publication number 20240145579
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Yun PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240136396
- Publication date Apr 25, 2024
- SAMSUNG ELECTRONICS CO., LTD.
- Jiho Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
- Publication number 20240136397
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTORS
- Publication number 20240136395
- Publication date Apr 25, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND PREPARATION...
- Publication number 20240136413
- Publication date Apr 25, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- CHUNXU LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128263
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20240120383
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240113160
- Publication date Apr 4, 2024
- Samsung Electronics Co., Ltd.
- Juseong MIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20240113161
- Publication date Apr 4, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105836
- Publication date Mar 28, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20240105846
- Publication date Mar 28, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240105815
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chin-Yi HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE ELECTRONIC ASSEMBLY
- Publication number 20240105708
- Publication date Mar 28, 2024
- InnoLux Corporation
- CHANDRA LIUS
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240096960
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Seunghyun SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20240097034
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Loss Prevention
- Publication number 20240087961
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ju CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE
- Publication number 20240088229
- Publication date Mar 14, 2024
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...
- Publication number 20240088266
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
- Publication number 20240088155
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...
- Publication number 20240088297
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20240088268
- Publication date Mar 14, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED PROTECTION DEVICE STRUCTURES FOR AN ELECTROSTATIC DISCHARGE P...
- Publication number 20240079482
- Publication date Mar 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Prantik Mahajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Method of Manufacturing of a Semiconduct...
- Publication number 20240079494
- Publication date Mar 7, 2024
- NEXPERIA B.V.
- Manoj Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20240079483
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Hung LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SUBSTRATE CONTACT
- Publication number 20240071811
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH ISOLATION PILLARS
- Publication number 20240072050
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULL WRAP AROUND BACKSIDE CONTACT
- Publication number 20240072116
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240063278
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Dai IWATA
- H01 - BASIC ELECTRIC ELEMENTS

adjoining the input or output region of a field-effect device

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage field effect transistor with vertical current paths an...

Semiconductor device and method of fabricating the same

Semiconductor device with doped region between gate and drain

Semiconductor structure and method of forming the same

Miniaturized transistor structure with controlled dimensions of sou...

Integrated circuit devices

FinFET channel on oxide structures and related methods

Semiconductor device

Memory array including epitaxial source lines and bit lines

Semiconductor device including different nitride regions improving...

Semiconductor devices with nanowires and methods for fabricating th...

Fin end plug structures for advanced integrated circuit structure f...

Negative capacitance transistor with external ferroelectric structure

Capacitance reduction for back-side power rail device

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device

Heterogeneous metal line compositions for advanced integrated circu...

Methods for forming air spacers in semiconductor devices

Field-effect transistors with a gate structure in a dual-depth tren...

Semiconductor devices including protruding insulation portions betw...

RF MOS varactor

Power reduction in finFET structures

Trench contact structures for advanced integrated circuit structure...

Sideways vias in isolation areas to contact interior layers in stac...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device and manufacturing method thereof

Semiconductor device having asymmetrical source/drain

Dielectric structures for semiconductor devices

High voltage transistor structure

Semiconductor device with oxide-nitride stack

Patents Applicationslast 30 patents

CAPACITANCE REDUCTION FOR BACKSIDE POWER RAIL DEVICE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...

TRANSISTOR ISOLATION STRUCTURES

SEMICONDUCTOR DEVICES

HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS

JUNCTION FIELD-EFFECT TRANSISTORS

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND PREPARATION...

NITRIDE SEMICONDUCTOR DEVICE

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

FLEXIBLE ELECTRONIC ASSEMBLY

INTEGRATED CIRCUIT DEVICE

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

Fin Loss Prevention

LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE

EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...

AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE

A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CO...

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

GATED PROTECTION DEVICE STRUCTURES FOR AN ELECTROSTATIC DISCHARGE P...

Semiconductor Device and a Method of Manufacturing of a Semiconduct...

ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES

STACKED FET SUBSTRATE CONTACT

FIELD-EFFECT TRANSISTORS WITH ISOLATION PILLARS

FULL WRAP AROUND BACKSIDE CONTACT

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...