adjoining the input or output region of a field-effect device

Industry

CPC
H01L29/0653

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0653adjoining the input or output region of a field-effect device

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including multi-thickness nanowires
- Patent number 12,206,026
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Seung Hun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with intergrated resistor at element region bo...
- Patent number 12,206,019
- Issue date Jan 21, 2025
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-formation mends of dielectric features
- Patent number 12,206,013
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFETS having step sided contact plugs and methods of manufacturin...
- Patent number 12,206,022
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Sun Hom Paak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same where semic...
- Patent number 12,199,163
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Munhyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon channel tempering
- Patent number 12,199,190
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,176
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-finger transistor structure and method of manufacturing the same
- Patent number 12,191,367
- Issue date Jan 7, 2025
- United Microelectronics Corp.
- Su Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate semiconductor device with inner spacer and fabrication m...
- Patent number 12,191,379
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of silicon channel nanostructures and silicon-germanium...
- Patent number 12,191,305
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using different work-functions to reduce gate-induced drain leakage...
- Patent number 12,191,352
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside PN junction diode
- Patent number 12,183,736
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing gap filling including filling trenches between...
- Patent number 12,183,590
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 12,176,426
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,170,314
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with element isolation area
- Patent number 12,170,316
- Issue date Dec 17, 2024
- Kabushika Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel conduction in semiconductor devices
- Patent number 12,166,072
- Issue date Dec 10, 2024
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with inner spacer
- Patent number 12,166,129
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,934
- Issue date Dec 3, 2024
- Renesas Electronics Corporation
- Katsumi Eikyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,899
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jung-Chan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor contacts and methods of forming the same
- Patent number 12,154,949
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...
- Publication number 20250031418
- Publication date Jan 23, 2025
- Samsung Electronics Co., LTD
- Rock-Hyun BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION
- Publication number 20250022913
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Publication number 20250015181
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20250006549
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
THROUGH-SUBSTRATE VIA AND METHOD FOR FORMING THE SAME
- Publication number 20240405069
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240395929
- Publication date Nov 28, 2024
- United Microelectronics Corp.
- Chen-Yuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CONTACTS AND METHODS OF FORMING THE SAME
- Publication number 20240395871
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240395624
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240397692
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...
- Publication number 20240395900
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395902
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for FinFET Device with Asymmetric Contact
- Publication number 20240395935
- Publication date Nov 28, 2024
- Parabellum Strategic Opportunities Fund LLC
- Jhon Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH FLUSH SHALLOW TRENCH ISOLATION AND GAT...
- Publication number 20240395883
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Ta-Wei Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20240387746
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Fin Structures in Semiconductor Devices
- Publication number 20240387694
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR IN NANOSHEET
- Publication number 20240387518
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BENT FIN DEVICES
- Publication number 20240387533
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiun-Ming KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE
- Publication number 20240387704
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST-FORMATION MENDS OF DIELECTRIC FEATURES
- Publication number 20240387705
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE SEMICONDUCTOR DEVICE WITH INNER SPACER AND FABRICATION M...
- Publication number 20240387707
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CHANNEL TEMPERING
- Publication number 20240387745
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME
- Publication number 20240387523
- Publication date Nov 21, 2024
- UNITED MICROELECTRONICS CORP.
- Hsin-Hsien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING T...
- Publication number 20240387550
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE
- Publication number 20240387738
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240379853
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Structure with Reduced Leakage Current
- Publication number 20240379859
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS

adjoining the input or output region of a field-effect device

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including multi-thickness nanowires

Semiconductor device with intergrated resistor at element region bo...

Post-formation mends of dielectric features

FINFETS having step sided contact plugs and methods of manufacturin...

Method of manufacturing a multi-gate device having a semiconductor...

Semiconductor devices and method of manufacturing the same

Semiconductor device and method of fabricating the same where semic...

Gate line plug structures for advanced integrated circuit structure...

Structure and formation method of semiconductor device structure wi...

Silicon channel tempering

Plugs for interconnect lines for advanced integrated circuit struct...

Semiconductor device

Multi-finger transistor structure and method of manufacturing the same

Multi-gate semiconductor device with inner spacer and fabrication m...

Reducing off-state leakage in semiconductor devices

Integration of silicon channel nanostructures and silicon-germanium...

Using different work-functions to reduce gate-induced drain leakage...

Backside PN junction diode

Method of performing gap filling including filling trenches between...

Bipolar transistor structure on semiconductor fin and methods to fo...

Source/drain feature separation structure

Method of forming a transistor device with a gate structure having...

Semiconductor device and manufacturing method thereof

Nitride semiconductor device with element isolation area

Channel conduction in semiconductor devices

Nanosheet channel-to-source and drain isolation

Semiconductor device structure with inner spacer

Semiconductor device

Semiconductor device

Transistor contacts and methods of forming the same

Patents Applicationslast 30 patents

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...

TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

METAL-OXIDE SEMICONDUCTOR TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD

FETS and Methods of Forming FETS

NANOSHEET TRANSISTOR

THROUGH-SUBSTRATE VIA AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

TRANSISTOR CONTACTS AND METHODS OF FORMING THE SAME

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...

SEMICONDUCTOR DEVICE AND METHOD

Structure and Method for FinFET Device with Asymmetric Contact

SEMICONDUCTOR STRUCTURE WITH FLUSH SHALLOW TRENCH ISOLATION AND GAT...

FinFET Device With High-K Metal Gate Stack

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

Isolated Fin Structures in Semiconductor Devices

CAPACITOR IN NANOSHEET

BENT FIN DEVICES

METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE

POST-FORMATION MENDS OF DIELECTRIC FEATURES

MULTI-GATE SEMICONDUCTOR DEVICE WITH INNER SPACER AND FABRICATION M...

SILICON CHANNEL TEMPERING

SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME

SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING T...

SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE

FINFET DEVICE AND METHOD OF FORMING SAME

Device Structure with Reduced Leakage Current