adjoining the input or output region of a field-effect device

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CPC
H01L29/0653

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0653adjoining the input or output region of a field-effect device

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method forming a semiconductor device structure having an undergrou...
- Patent number 12,148,500
- Issue date Nov 19, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 12,148,843
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor device structure
- Patent number 12,148,815
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based devices having inner spacer structures or gate por...
- Patent number 12,148,812
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,142,668
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with high-K metal gate stack
- Patent number 12,142,685
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 12,142,686
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device and manufacturing method thereof
- Patent number 12,136,650
- Issue date Nov 5, 2024
- Richtek Technology Corporation
- Chih-Wen Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device with dielectric layer...
- Patent number 12,125,877
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with lateral transistor
- Patent number 12,125,906
- Issue date Oct 22, 2024
- Denso Corporation
- Shinichiro Yanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 12,113,128
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with cap layer
- Patent number 12,107,165
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,107,153
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 12,107,154
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device and manufacturing method thereof
- Patent number 12,107,160
- Issue date Oct 1, 2024
- Richtek Technology Corporation
- Kuo-Hsuan Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,100,765
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with implant and method of manufacturing same
- Patent number 12,100,738
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor with bottom dielectric isol...
- Patent number 12,100,746
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with gate isolation structure and method
- Patent number 12,100,770
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi-Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer formation with a spin-on dielectric material
- Patent number 12,094,952
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETs and methods of forming FETs
- Patent number 12,094,761
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor in nanosheet
- Patent number 12,094,872
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain isolation structures for leakage prevention
- Patent number 12,094,927
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,862
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolations and methods of forming the same
- Patent number 12,087,801
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer features for multi-gate transistors
- Patent number 12,087,842
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20240387746
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Fin Structures in Semiconductor Devices
- Publication number 20240387694
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR IN NANOSHEET
- Publication number 20240387518
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BENT FIN DEVICES
- Publication number 20240387533
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiun-Ming KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE
- Publication number 20240387704
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST-FORMATION MENDS OF DIELECTRIC FEATURES
- Publication number 20240387705
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE SEMICONDUCTOR DEVICE WITH INNER SPACER AND FABRICATION M...
- Publication number 20240387707
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CHANNEL TEMPERING
- Publication number 20240387745
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE
- Publication number 20240387738
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME
- Publication number 20240387523
- Publication date Nov 21, 2024
- UNITED MICROELECTRONICS CORP.
- Hsin-Hsien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING T...
- Publication number 20240387550
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20240379750
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF...
- Publication number 20240379761
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MAN...
- Publication number 20240379771
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Wen TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240379853
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Structure with Reduced Leakage Current
- Publication number 20240379859
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240379875
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD
- Publication number 20240379803
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Ju LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379841
- Publication date Nov 14, 2024
- Vanguard International Semiconductor Corporation
- Tse-Hsiao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER INTERFACE AND MANUFACTUR...
- Publication number 20240379842
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-YING LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379683
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS
- Publication number 20240379822
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Isolation Structures For Leakage Prevention
- Publication number 20240379749
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Fabricating Method Thereof
- Publication number 20240379660
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bonding and Isolation Techniques for Stacked Transistor Structures
- Publication number 20240379748
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD
- Publication number 20240379878
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shi-Ning JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240371644
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structure and Method for Forming the Same
- Publication number 20240372000
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Chi WU
- H01 - BASIC ELECTRIC ELEMENTS

adjoining the input or output region of a field-effect device

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method forming a semiconductor device structure having an undergrou...

Semiconductor device with treated interfacial layer on silicon germ...

Fin field effect transistor device structure

Nano-sheet-based devices having inner spacer structures or gate por...

Semiconductor device and method

FinFET device with high-K metal gate stack

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Field effect transistor

Semiconductor device including a gate-all-around field effect trans...

Contact over active gate structures for advanced integrated circuit...

High voltage device and manufacturing method thereof

Bonding and isolation techniques for stacked transistor structures

Nanostructure field-effect transistor device with dielectric layer...

Semiconductor device with lateral transistor

DMOS transistor having thick gate oxide and STI and method of fabri...

Semiconductor device structure with cap layer

Semiconductor device and manufacturing method thereof

Single fin structures

Power device and manufacturing method thereof

Semiconductor device structure and method for forming the same

Semiconductor device with implant and method of manufacturing same

Gate-all-around field effect transistor with bottom dielectric isol...

Field effect transistor with gate isolation structure and method

Air spacer formation with a spin-on dielectric material

FETs and methods of forming FETs

Capacitor in nanosheet

Source/drain isolation structures for leakage prevention

Semiconductor device

Deep trench isolations and methods of forming the same

Inner spacer features for multi-gate transistors

Patents Applicationslast 30 patents

FinFET Device With High-K Metal Gate Stack

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

Isolated Fin Structures in Semiconductor Devices

CAPACITOR IN NANOSHEET

BENT FIN DEVICES

METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE

POST-FORMATION MENDS OF DIELECTRIC FEATURES

MULTI-GATE SEMICONDUCTOR DEVICE WITH INNER SPACER AND FABRICATION M...

SILICON CHANNEL TEMPERING

SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE

SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME

SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING T...

Nanostructure Field-Effect Transistor Device and Method of Forming

SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF...

METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MAN...

FINFET DEVICE AND METHOD OF FORMING SAME

Device Structure with Reduced Leakage Current

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER INTERFACE AND MANUFACTUR...

SEMICONDUCTOR DEVICES

INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS

Source/Drain Isolation Structures For Leakage Prevention

Semiconductor Device and Fabricating Method Thereof

Bonding and Isolation Techniques for Stacked Transistor Structures

FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

Semiconductor Device Structure and Method for Forming the Same