Alloying of doping materials with AIIIBV compounds

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/242Alloying of doping materials with AIIIBV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Multilayer structure, method for manufacturing same, semiconductor...
- Patent number 10,043,664
- Issue date Aug 7, 2018
- FLOSFIA INC.
- Masaya Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital alloy FinFET co-integrated with passive resistor with good...
- Patent number 9,793,263
- Issue date Oct 17, 2017
- International Business Machines Corporation
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Information Patent Grant
Selective dopant junction for a group III-V semiconductor device
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- Issue date Jun 13, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high pressure doping of materials
- Patent number 9,601,641
- Issue date Mar 21, 2017
- AppliCote Associates, LLC
- Nathaniel R Quick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming nanocrystals with position-controlled dopants
- Patent number 9,406,759
- Issue date Aug 2, 2016
- University of Florida Research Foundation, Inc.
- Y. Charles Cao
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Strain relaxation using metal materials and related structures
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- Issue date Apr 12, 2016
- Soitec
- Christiaan J. Werkhoven
- H01 - BASIC ELECTRIC ELEMENTS
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Strain relaxation using metal materials and related structures
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- Issue date Jan 28, 2014
- Soitec
- Christiaan J. Werkhoven
- H01 - BASIC ELECTRIC ELEMENTS
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Ohmic metal contact protection using an encapsulation layer
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- Issue date Oct 4, 2011
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact and channel protection in GaN devices using an...
- Patent number 7,566,916
- Issue date Jul 28, 2009
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for form...
- Patent number 7,018,915
- Issue date Mar 28, 2006
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact and channel protection in GaN devices using an...
- Patent number 6,884,704
- Issue date Apr 26, 2005
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
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III nitride compound semiconductor element an electrode forming method
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- Issue date Oct 19, 2004
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- Naoki Shibata
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Information Patent Grant
Method for producing superconductors
- Patent number 4,321,749
- Issue date Mar 30, 1982
- National Research Institute For Metals
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Field-effect transistors with micron and submicron gate lengths
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- Issue date Jan 12, 1982
- Eaton Corporation
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Ohmic contracts to p-type indium phosphide
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- Issue date May 24, 1977
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- Ronald L. Moon
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Ohmic contact
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- Issue date Oct 5, 1976
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Solar cell
- Patent number 3,936,319
- Issue date Feb 3, 1976
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Information Patent Grant
3659162
- Patent number 3,659,162
- Issue date Apr 25, 1972
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3468659
- Patent number 3,468,659
- Issue date Sep 23, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3371255
- Patent number 3,371,255
- Issue date Feb 27, 1968
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTILAYER STRUCTURE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...
- Publication number 20170278706
- Publication date Sep 28, 2017
- FLOSFIA INC.
- Masaya Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE
- Publication number 20160329211
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELAXATION USING METAL MATERIALS AND RELATED STRUCTURES
- Publication number 20140138796
- Publication date May 22, 2014
- SOITEC
- Christiaan J. Werkhoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELAXATION USING METAL MATERIALS AND RELATED STRUCTURES
- Publication number 20120161289
- Publication date Jun 28, 2012
- S.O.I TEC SILICON ON INSULATOR TECHNOLOGIES
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- H01 - BASIC ELECTRIC ELEMENTS
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Doped Nanocrystals
- Publication number 20100055462
- Publication date Mar 4, 2010
- Y. Charles Cao
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER
- Publication number 20090250725
- Publication date Oct 8, 2009
- HRL LABORATORIES, LLC
- Tahir HUSSAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic metal contact and channel protection in GaN devices using an...
- Publication number 20050048747
- Publication date Mar 3, 2005
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group lll nitride compound semiconductor device and method for form...
- Publication number 20040222499
- Publication date Nov 11, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic metal contact and channel protection in GaN devices using an...
- Publication number 20040029330
- Publication date Feb 12, 2004
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III nitride compound semiconductor element an electrode forming method
- Publication number 20030155575
- Publication date Aug 21, 2003
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Alloying of doping materials with AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multilayer structure, method for manufacturing same, semiconductor...

Digital alloy FinFET co-integrated with passive resistor with good...

Selective dopant junction for a group III-V semiconductor device

Ultra-high pressure doping of materials

Methods for forming nanocrystals with position-controlled dopants

Strain relaxation using metal materials and related structures

Strain relaxation using metal materials and related structures

Ohmic metal contact protection using an encapsulation layer

Ohmic metal contact and channel protection in GaN devices using an...

Group III nitride compound semiconductor device and method for form...

Ohmic metal contact and channel protection in GaN devices using an...

III nitride compound semiconductor element an electrode forming method

Method for producing superconductors

Field-effect transistors with micron and submicron gate lengths

Ohmic contracts to p-type indium phosphide

Ohmic contact

Solar cell

3659162

3468659

3371255

Patents Applicationslast 30 patents

MULTILAYER STRUCTURE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...

SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE

STRAIN RELAXATION USING METAL MATERIALS AND RELATED STRUCTURES

STRAIN RELAXATION USING METAL MATERIALS AND RELATED STRUCTURES

Doped Nanocrystals

OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER

Ohmic metal contact and channel protection in GaN devices using an...

Group lll nitride compound semiconductor device and method for form...

Ohmic metal contact and channel protection in GaN devices using an...

III nitride compound semiconductor element an electrode forming method