Claims
- 1. An ohmic contact comprising:
- a body of single crystal, high resistivity gallium arsenide, and
- a layer of an indium gallium arsenide alloy on a surface of said body.
- 2. An ohmic contact in accordance with claim 1 in which said body of single crystal gallium arsenide has a resistivity of 1 ohm-centimeter or greater.
- 3. An ohmic contact in accordance with claim 2 in which a first metallic layer is on said indium gallium arsenide alloy layer and a second metallic layer is on said first metallic layer.
- 4. An ohmic contact in accordance with claim 3 in which said first metallic layer is of nickel and said second metallic layer is gold.
Parent Case Info
This is a division of application Ser. No. 477,850, filed 6-10-74, now U.S. Pat. No. 3,929,525.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3632431 |
Andre et al. |
Jan 1972 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
477850 |
Jun 1974 |
|