Amorphous materials

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/2006Amorphous materials

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,237,409
- Issue date Feb 25, 2025
- Kabushiki Kaisha Toshiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaAIN-based semiconductor device
- Patent number 12,237,423
- Issue date Feb 25, 2025
- Japan Science and Technology Agency
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including compound and nitride members
- Patent number 12,218,232
- Issue date Feb 4, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,823
- Issue date Sep 10, 2024
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a fin-shaped active region and a gate ele...
- Patent number 12,015,086
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including different nitride regions improving...
- Patent number 11,967,641
- Issue date Apr 23, 2024
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including different nitride regions and method...
- Patent number 11,677,020
- Issue date Jun 13, 2023
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,329,135
- Issue date May 10, 2022
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including different nitride regions and method...
- Patent number 11,139,393
- Issue date Oct 5, 2021
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a fin-shaped active region and a gate ele...
- Patent number 11,038,062
- Issue date Jun 15, 2021
- Samsung Electronics Co., Ltd.
- Jae-hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) substrate comprising a trap-rich l...
- Patent number 10,923,503
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,910,490
- Issue date Feb 2, 2021
- Kabushiki Kaisha Toshiba
- Masahiko Kuraguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistors with embedded dielectric spacers
- Patent number 10,840,352
- Issue date Nov 17, 2020
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 10,734,487
- Issue date Aug 4, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Hiroki Komagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous boron nitride dielectric
- Patent number 10,418,237
- Issue date Sep 17, 2019
- United States of America as represented by the Secretary of the Air Force
- Nicholas Glavin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Compound semiconductor substrate and method of forming a compound s...
- Patent number 10,403,496
- Issue date Sep 3, 2019
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a fin-shaped active region and a gate e...
- Patent number 10,361,309
- Issue date Jul 23, 2019
- Samsung Electronics Co., Ltd.
- Jae-hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and semiconductor device
- Patent number 9,613,961
- Issue date Apr 4, 2017
- Kabushiki Kaisha Toshiba
- Yoshiki Kamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline-amorphous transition material for semiconductor devices...
- Patent number 9,553,181
- Issue date Jan 24, 2017
- Toshiba Corporation
- Long Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a stacked low temperature transistor and related...
- Patent number 9,087,689
- Issue date Jul 21, 2015
- INOSO, LLC
- Ziep Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride metal-insulator-semiconductor field-effect transistor
- Patent number 9,059,200
- Issue date Jun 16, 2015
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride transistor using a regrown structure
- Patent number 8,975,664
- Issue date Mar 10, 2015
- TriQuint Semiconductor, Inc.
- Paul A. Saunier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,766,276
- Issue date Jul 1, 2014
- Renesas Electronics Corporation
- Masayasu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous group III-V semiconductor material and preparation thereof
- Patent number 8,735,290
- Issue date May 27, 2014
- Mosaic Crystal Ltd.
- Moshe Einav
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Boron phoshide-based compound semiconductor device, production meth...
- Patent number 7,508,010
- Issue date Mar 24, 2009
- Showa Denko K.K.
- Takashi Udagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V compound semiconductor, and semiconductor device using...
- Patent number 6,432,521
- Issue date Aug 13, 2002
- Fuji Xerox Co., Ltd.
- Shigeru Yagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-V amorphous and microcrystalline optical semiconductor in...
- Patent number 5,986,285
- Issue date Nov 16, 1999
- Fuji Xerox, Co., Ltd.
- Shigeru Yagi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290888
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT...
- Publication number 20240242965
- Publication date Jul 18, 2024
- Samsung Electronics Co., Ltd.
- Taejin CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD...
- Publication number 20230268430
- Publication date Aug 24, 2023
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230061811
- Publication date Mar 2, 2023
- Kabushiki Kaisha Toshiba
- Daimotsu KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230068711
- Publication date Mar 2, 2023
- Kabushiki Kaisha Toshiba
- Daimotsu KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230025093
- Publication date Jan 26, 2023
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD...
- Publication number 20210384337
- Publication date Dec 9, 2021
- KABUSHIKI KAISHA TOSHIBA
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A FIN-SHAPED ACTIVE REGION AND A GATE ELE...
- Publication number 20210265503
- Publication date Aug 26, 2021
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210184007
- Publication date Jun 17, 2021
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200295169
- Publication date Sep 17, 2020
- KABUSHIKI KAISHA TOSHIBA
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTORS WITH EMBEDDED DIELECTRIC SPACERS
- Publication number 20200168703
- Publication date May 28, 2020
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190273159
- Publication date Sep 5, 2019
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190229192
- Publication date Jul 25, 2019
- Semiconductor Energy Laboratory Co., Ltd
- Hiroki KOMAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170213913
- Publication date Jul 27, 2017
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crystalline-Amorphous Transition Material For Semiconductor Devices...
- Publication number 20160351698
- Publication date Dec 1, 2016
- TOSHIBA CORPORATION
- Long Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INGAALN-BASED SEMICONDUCTOR DEVICE
- Publication number 20160225913
- Publication date Aug 4, 2016
- Japan Science and Technology Agency
- Hiroshi FUJIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20160197076
- Publication date Jul 7, 2016
- KABUSHIKA KAISHA TOSHIBA
- Yoshiki KAMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE TRANSISTOR USING A REGROWN STRUCTURE
- Publication number 20140001478
- Publication date Jan 2, 2014
- TriQuint Semiconductor, Inc.
- Paul Saunier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130126893
- Publication date May 23, 2013
- RENESAS ELECTRONICS CORPORATION
- Masayasu TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Metal Insulator Semiconductor Field effect Transistor
- Publication number 20130026495
- Publication date Jan 31, 2013
- HRL LOBORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS GROUP III-V SEMICONDUCTOR MATERIAL AND PREPARATION THEREOF
- Publication number 20100311229
- Publication date Dec 9, 2010
- Mosaic Crystals Ltd.
- Moshe Einav
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Boron phosphide-based compound semiconductor device, production met...
- Publication number 20060043506
- Publication date Mar 2, 2006
- Takashi Udagawa
- H01 - BASIC ELECTRIC ELEMENTS

Amorphous materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

InGaAIN-based semiconductor device

Semiconductor device including compound and nitride members

Semiconductor device

Semiconductor device with a fin-shaped active region and a gate ele...

Semiconductor device including different nitride regions improving...

Semiconductor device including different nitride regions and method...

Semiconductor device

Semiconductor device including different nitride regions and method...

Semiconductor device with a fin-shaped active region and a gate ele...

Semiconductor-on-insulator (SOI) substrate comprising a trap-rich l...

Semiconductor device

Nanowire transistors with embedded dielectric spacers

Semiconductor device and method for manufacturing semiconductor device

Amorphous boron nitride dielectric

Compound semiconductor substrate and method of forming a compound s...

Semiconductor device having a fin-shaped active region and a gate e...

Field-effect transistor and semiconductor device

Crystalline-amorphous transition material for semiconductor devices...

Method of forming a stacked low temperature transistor and related...

III-Nitride metal-insulator-semiconductor field-effect transistor

Group III-nitride transistor using a regrown structure

Semiconductor device and method of manufacturing semiconductor device

Amorphous group III-V semiconductor material and preparation thereof

Boron phoshide-based compound semiconductor device, production meth...

Group III-V compound semiconductor, and semiconductor device using...

Group III-V amorphous and microcrystalline optical semiconductor in...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT...

SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD...

SEMICONDUCTOR DEVICE WITH A FIN-SHAPED ACTIVE REGION AND A GATE ELE...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

NANOWIRE TRANSISTORS WITH EMBEDDED DIELECTRIC SPACERS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Crystalline-Amorphous Transition Material For Semiconductor Devices...

INGAALN-BASED SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE

GROUP III-NITRIDE TRANSISTOR USING A REGROWN STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

III-Nitride Metal Insulator Semiconductor Field effect Transistor

AMORPHOUS GROUP III-V SEMICONDUCTOR MATERIAL AND PREPARATION THEREOF

Boron phosphide-based compound semiconductor device, production met...